Valeri Preobrazhenskii


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Person Info

NAME

Valeri

SURNAME

Preobrazhenskii

Publications in SciGraph latest 50 shown

  • 2017-04 Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor in JETP LETTERS
  • 2017-01 Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells in SEMICONDUCTORS
  • 2016-12 Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs in SEMICONDUCTORS
  • 2016-11 Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence in SEMICONDUCTORS
  • 2016-07 Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion in JETP LETTERS
  • 2016-01 Formation and crystal structure of GaSb/GaP quantum dots in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2015-12 Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials in SEMICONDUCTORS
  • 2014-10 Fröhlich resonance in the AsSb/AlGaAs system in PHYSICS OF THE SOLID STATE
  • 2014-07 InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates in RUSSIAN PHYSICS JOURNAL
  • 2014-05 Heteroepitaxy of AIIIBV films on vicinal Si(001) substrates in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2013-08 Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix in SEMICONDUCTORS
  • 2013-06 Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates in RUSSIAN PHYSICS JOURNAL
  • 2013-03 Dependence of plastic relaxation in GaAs films on nucleation of the first as monolayer on Si(001) substrates in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2012-12 New system of self-assembled GaSb/GaP quantum dots in SEMICONDUCTORS
  • 2012-10 Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions in SEMICONDUCTORS
  • 2011-12 Electron microscopy of GaAs Structures with InAs and as quantum dots in SEMICONDUCTORS
  • 2011-10 Formation of type-II InAs/GaSb strained short-period superlattices for IR photodetectors by molecular beam epitaxy in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2011-07 Yb3+:KY(WO4)2 laser with a fast saturable absorber in LASER PHYSICS
  • 2011-02 Molecular-beam epitaxy of GaAs/Si(001) structures for high-performance tandem AIIIBV/Si-solar energy converters on an active silicon substrate in RUSSIAN PHYSICS JOURNAL
  • 2010-05 Semiconductor nanostructures modified by the UV laser radiation in LASER PHYSICS
  • 2009-12 GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process in SEMICONDUCTORS
  • 2009-10 Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs in SEMICONDUCTORS
  • 2009-08 High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus in SEMICONDUCTORS
  • 2009-02 As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus in SEMICONDUCTORS
  • 2009-02 Reflective interferometer for investigation of the amplitude-phase characteristics of semiconductor nanostructures in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2009-02 Self-mode-locking of the Nd3+:KGd(WO4)2 laser using a multifunctional semiconductor mirror in LASER PHYSICS
  • 2008-09 Influence of the structural surface state on the formation of a relief and morphology of GaAs(001) layers during molecular-beam epitaxy and vacuum annealing in RUSSIAN PHYSICS JOURNAL
  • 2008-05 Reflectivity kinetics in the vicinity of exciton transitions in semiconductor nanostructures in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2007-04 Coherent control of transient optical phenomena: Molecules, atoms, and nanostructures in LASER PHYSICS
  • 2007-04 A new technique to measure the phase characteristics of laser mirrors based on semiconductor heterostructures in LASER PHYSICS
  • 2006-12 Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy in RUSSIAN PHYSICS JOURNAL
  • 2006-07 Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature in SEMICONDUCTORS
  • 2005-09 Electron traps in thin layers of low-temperature-grown gallium arsenide with As-Sb nanoclusters in SEMICONDUCTORS
  • 2005-02 Dichroism in transmission of light by an array of self-assembled GaAs quantum wires on a nanofaceted A(311) surface in PHYSICS OF THE SOLID STATE
  • 2005-01 A study of recombination centers related to As-Sb nanoclusters in low-temperature grown gallium arsenide in SEMICONDUCTORS
  • 2004-04 Capacitance study of electron traps in low-temperature-grown GaAs in SEMICONDUCTORS
  • 2003-09 Effect of growth conditions on incorporation of Si into Ga and As sublattices of GaAs during molecular-beam epitaxy in SEMICONDUCTORS
  • 2002-09 Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy in SEMICONDUCTORS
  • 2002-08 Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs in SEMICONDUCTORS
  • 2001-05 Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces in JOURNAL OF ELECTRONIC MATERIALS
  • 2000-09 Accumulation of majority charge carriers in GaAs layers containing arsenic nanoclusters in SEMICONDUCTORS
  • 2000-06 Phonon-plasmon interaction in tunneling GaAs/AlAs superlattices in JETP LETTERS
  • 2000-01 Transverse optical phonon splitting in GaAs/AlAs superlattices grown on the GaAs(311) surface studied by the method of Raman light scattering in SEMICONDUCTORS
  • 1999-10 Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures in SEMICONDUCTORS
  • 1999-08 Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy in SEMICONDUCTORS
  • 1999-07 Lateral localization of optical phonons in GaAs quantum islands in JETP LETTERS
  • 1998-10 Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy in SEMICONDUCTORS
  • 1998-10 Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters in SEMICONDUCTORS
  • 1998-09 Structure and properties of epitaxial GaAs and InGaAs films grown by low-temperature molecular-beam epitaxy in RUSSIAN PHYSICS JOURNAL
  • 1998-09 Donor-acceptor recombination in type-II GaAs/AlAs superlattices in PHYSICS OF THE SOLID STATE
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