S V Ivanov

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Publications in SciGraph latest 50 shown

  • 2018-12 Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes in SCIENTIFIC REPORTS
  • 2018-05 Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands in SEMICONDUCTORS
  • 2018-05 Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE in SEMICONDUCTORS
  • 2018-03 Contactless Measurement of Electron Concentration in Undoped Homoepitaxial InSb Layers in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2017-12 Manifestation of PT symmetry in the exciton spectra of quantum wells in SEMICONDUCTORS
  • 2017-11 The interference enhancement of light polarization conversion from structures with a quantum well in PHYSICS OF THE SOLID STATE
  • 2017-07 AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm in JOURNAL OF ELECTRONIC MATERIALS
  • 2017-07 Förster Resonance Energy Transfer and Harvesting in II–VI Fractional Monolayer Structures in JOURNAL OF ELECTRONIC MATERIALS
  • 2017-05 Stress generation and relaxation in (Al,Ga)N/6H-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy in TECHNICAL PHYSICS LETTERS
  • 2017-03 Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III-N heterostructures by molecular-beam epitaxy in TECHNICAL PHYSICS LETTERS
  • 2016-12 Photoreflectance of indium antimonide in PHYSICS OF THE SOLID STATE
  • 2016-12 Heterostructures with CdTe/ZnTe quantum dots for single photon emitters grown by molecular beam epitaxy in TECHNICAL PHYSICS LETTERS
  • 2016-11 Resonance energy transfer in a dense array of II–VI quantum dots in PHYSICS OF THE SOLID STATE
  • 2016-11 III-nitride tunable cup-cavities supporting quasi whispering gallery modes from ultraviolet to infrared in SCIENTIFIC REPORTS
  • 2016-11 AlGaN nanostructures with extremely high quantum yield at 300 K in PHYSICS OF THE SOLID STATE
  • 2016-10 Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range in TECHNICAL PHYSICS LETTERS
  • 2016-07 Isolated quantum emitters originating from defect centers in a ZnSe/ZnMgSSe heterostructure in JETP LETTERS
  • 2016-05 Complex use of the diffraction techniques in depth profiling of the crystal lattice parameter and composition of InGaAs/GaAs gradient layers in TECHNICAL PHYSICS LETTERS
  • 2016-04 X-ray diffractometry of AlN/c-sapphire templates obtained by plasma-activated molecular beam epitaxy in TECHNICAL PHYSICS LETTERS
  • 2015-11 Temperature switching of cavity modes in InN microcrystals in SEMICONDUCTORS
  • 2015-09 MBE-grown GaAs:Si/GaAs:Be tunnel diodes for multijunction solar cells in TECHNICAL PHYSICS LETTERS
  • 2015-08 Molecular beam epitaxy of ZnSSe/CdSe short-period superlattices for III–V/II–VI multijunction solar cells in SEMICONDUCTORS
  • 2015-04 Temperature dependences of the contact resistivity in ohmic contacts to n+-InN in SEMICONDUCTORS
  • 2015-03 Optical studies of carriers’ vertical transport in the alternately-strained ZnS0.4Se0.6/CdSe superlattice in SEMICONDUCTORS
  • 2015-03 Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping in SEMICONDUCTORS
  • 2015-02 Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites in SEMICONDUCTORS
  • 2014-12 X-ray diffraction determination of the degree of ordering of a solid solution in epitaxial AlGaN layers in PHYSICS OF THE SOLID STATE
  • 2014-12 Magnetooptical study of CdSe/ZnMnSe semimagnetic quantum-dot ensembles with n-type modulation doping in SEMICONDUCTORS
  • 2014-10 The structural state of epitaxial ZnO layers assessed by measuring the integral intensity of three- and two-beam X-ray diffraction in TECHNICAL PHYSICS LETTERS
  • 2014-04 Modification of the electronic structure and formation of an accumulation layer in ultrathin Ba/n-GaN and Ba/n-AlGaN interfaces in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2014-03 Peculiarities of the electrophysical properties of InSb/AlInSb/AlSb heterostructures with a high electron concentration in the two-dimensional channel in SEMICONDUCTORS
  • 2014-01 Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel in SEMICONDUCTORS
  • 2014-01 Molecular beam epitaxy of AlGaAs/Zn(Mn)Se hybrid nanostructures with InAs/AlGaAs quantum dots near the heterovalent interface in SEMICONDUCTORS
  • 2013-11 Generation of coherent terahertz radiation by polarized electron-hole pairs in GaAs/AlGaAs quantum wells in SEMICONDUCTORS
  • 2013-06 A scanning pulse-periodic laser based on heterostructures containing ZnSe with electron beam pumping in OPTICS AND SPECTROSCOPY
  • 2013-05 Chemical passivation of InSb (100) substrates in aqueous solutions of sodium sulfide in SEMICONDUCTORS
  • 2013-02 Determination of the thickness and spectral dependence of the refractive index of AlxIn1 − xSb epitaxial layers from reflectance spectra in SEMICONDUCTORS
  • 2013-01 Study of the gradual degradation of ZnSe-containing multilayer nanostructures—active elements of electron-beam and optical pumping lasers in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2013 Laser and Optical Properties of Green-Emitting ZnCdSe Quantum Dot Based Heterostructures in NANO-OPTICS FOR ENHANCING LIGHT-MATTER INTERACTIONS ON A MOLECULAR SCALE
  • 2012-08 Quantum-confined stark effect and localization of charge carriers in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells with different morphologies in SEMICONDUCTORS
  • 2012-06 Field injection of low-energy electrons into the ZnSe/CdSe/ZnSe heterostructure with the use of an ultra-high-vacuum tunneling microscope in PHYSICS OF THE SOLID STATE
  • 2012-05 Solar-blind UV photocathodes based on AlGaN heterostructures with a 300- to 330-nm spectral sensitivity threshold in TECHNICAL PHYSICS LETTERS
  • 2012-05 RHEED monitoring of elastic stresses during MBE growth of group III nitride heterostructures in TECHNICAL PHYSICS LETTERS
  • 2011-11 Optical Properties of Epitaxial AlxIn1−xSb Alloy Layers in SEMICONDUCTORS
  • 2011-10 Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures in SEMICONDUCTORS
  • 2011-08 Influence of nonlinear effects on destruction of active elements of electron-beam-pumped lasers Based on ZnSe-containing quantum-size structures in OPTICS AND SPECTROSCOPY
  • 2011-06 Excitonic spectrum of the ZnO/ZnMgO quantum wells in SEMICONDUCTORS
  • 2011-02 Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells in SEMICONDUCTORS
  • 2011-02 The ratio of the hole and electron exchange integrals in a CdMnSe/ZnSe diluted magnetic structure with quantum dots in SEMICONDUCTORS
  • 2010-08 Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures in SEMICONDUCTORS
  • Affiliations

  • Ioffe Institute (current)
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