V M Ustinov

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Publications in SciGraph latest 50 shown

  • 2018-01 The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers in TECHNICAL PHYSICS LETTERS
  • 2018-01 Investigation of the Modified Structure of a Quantum Cascade Laser in SEMICONDUCTORS
  • 2017-11 Optimization of the superlattice parameters for THz diodes in SEMICONDUCTORS
  • 2012-05 Monolithic white LEDs: Approaches, technology, design in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2012-01 Experimental study of frequency multipliers based on a GaAs/AlAs semiconductor superlattices in the terahertz frequency range in SEMICONDUCTORS
  • 2010-11 Carrier heating in quantum wells under optical and current injection of electron-hole pairs in SEMICONDUCTORS
  • 2009-12 Semiconductor nanowhiskers: Synthesis, properties, and applications in SEMICONDUCTORS
  • 2007-06-30 Quantum dots for GaAs-based surface emitting lasers at 1300 nm in ADVANCES IN SOLID STATE PHYSICS 40
  • 2007-05 Optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices in TECHNICAL PHYSICS LETTERS
  • 2006-10 Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs in SEMICONDUCTORS
  • 2006-07 Higher harmonics in the current oscillations in weakly coupled GaAs/AlGaAs superlattices in SEMICONDUCTORS
  • 2006-06 An X-ray diffraction and electron-microscopic study of the influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs heterostructures in SEMICONDUCTORS
  • 2006-06 Growth of GaAs nanowhisker arrays by magnetron sputtering on Si(111) substrates in TECHNICAL PHYSICS LETTERS
  • 2006-05 VCSELs based on arrays of sub-monolayer InGaAs quantum dots in SEMICONDUCTORS
  • 2006-03 Lasing properties of strain-compensated InAs/InGaAsN/GaAsN heterostructures in 1.3–1.55 μm spectral range in TECHNICAL PHYSICS LETTERS
  • 2006-03 The theory of the formation of multilayered thin films on solid surfaces in SEMICONDUCTORS
  • 2005-12 Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region in SEMICONDUCTORS
  • 2005-10 Light-emitting Si: Er structures prepared by molecular-beam epitaxy: Structural defects in PHYSICS OF THE SOLID STATE
  • 2005-07 Stresses in selectively oxidized GaAs/(AlGa)xOy structures in SEMICONDUCTORS
  • 2005-07 The transition from thermodynamically to kinetically controlled formation of quantum dots in an InAs/GaAs(100) system in SEMICONDUCTORS
  • 2005-06 The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3–1.55 μm in SEMICONDUCTORS
  • 2005-05 The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy in SEMICONDUCTORS
  • 2005-01 MBE-grown Si: Er light-emitting structures: Effect of epitaxial growth conditions on impurity concentration and photoluminescence in PHYSICS OF THE SOLID STATE
  • 2004-10 Properties of GaAs nanowhiskers grown on a GaAs(111)B surface using a combined technique in SEMICONDUCTORS
  • 2004-09 Characteristics of planar diodes based on heavily doped GaAs/AlAs superlattices in the terahertz frequency region in SEMICONDUCTORS
  • 2004-09 Peculiarities of the MBE growth of nanowhiskers on GaAs(100) substrates in TECHNICAL PHYSICS LETTERS
  • 2004-08 Lasing wavelength of quantum dot heterostructures controlled within the 1.3–0.85 μm range by means of high-temperature annealing in TECHNICAL PHYSICS LETTERS
  • 2004-08 Quantum dot structures: Fabrication technology and control of parameters in SEMICONDUCTORS
  • 2004-04 The effect of exposure to arsenic flow on the optical properties of quantum dot arrays in the InAs/GaAs(100) system in TECHNICAL PHYSICS LETTERS
  • 2004-03 Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2003-12 Room-temperature 1.5–1.6 µm photoluminescence from InGaAs/GaAs heterostructures grown at low substrate temperature in SEMICONDUCTORS
  • 2003-09 Dependence of the binding energy of A(+) centers on quantum-well width in GaAs/AlGaAs structures in SEMICONDUCTORS
  • 2003-09 Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE in SEMICONDUCTORS
  • 2003-07 Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode in SEMICONDUCTORS
  • 2003-05 Structural and optical properties of InAs quantum dots in AlGaAs matrix in SEMICONDUCTORS
  • 2003-01 Long-term stability of long-wavelength (>1.25 µm) quantum-dot lasers fabricated on GaAs substrates in TECHNICAL PHYSICS
  • 2002-09 Stark effect in vertically coupled quantum dots in InAs-GaAs heterostructures in SEMICONDUCTORS
  • 2002-09 Effect of carrier localization on the optical properties of MBE-grown GaAsN/GaAs heterostructures in SEMICONDUCTORS
  • 2002-08 Structure of heterointerfaces and photoluminescence properties of GaAs/AlAs superlattices grown on (311)A and (311)B surfaces: Comparative analysis in SEMICONDUCTORS
  • 2002-05 Photoluminescence in the 1.55 μm wavelength range in the InGaAs/GaAs system with quantum dots and wells in TECHNICAL PHYSICS LETTERS
  • 2002-03 Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures in TECHNICAL PHYSICS LETTERS
  • 2001-10 GaAsN-on-GaAs MBE using a DC plasma source in TECHNICAL PHYSICS
  • 2001-07 1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them in SEMICONDUCTORS
  • 2001-05 Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces in JOURNAL OF ELECTRONIC MATERIALS
  • 2001 Hot electron optical phenomena in GaAs/AlAs MQW structures in strong lateral electric field in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2000-09 Nanostructured InSiAs solid solution grown by molecular beam epitaxy on the Si(001) surface in TECHNICAL PHYSICS LETTERS
  • 2000-07 Study of multilayer structures with InAs nanoobjects in a silicon matrix in SEMICONDUCTORS
  • 2000-05 Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range in SEMICONDUCTORS
  • 2000-04 Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces in SEMICONDUCTORS
  • 2000-03 Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots in SEMICONDUCTORS
  • Affiliations

  • Ioffe Institute (current)
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