Victor M Ustinov


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Person Info

NAME

Victor M

SURNAME

Ustinov

Publications in SciGraph latest 50 shown

  • 2021-03 The Design of an Electrically-Driven Single Photon Source of the 1.3-μm Spectral Range Based on a Vertical Microcavity with Intracavity Contacts in TECHNICAL PHYSICS LETTERS
  • 2020-12 The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology in TECHNICAL PHYSICS LETTERS
  • 2020-10-09 1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy in SEMICONDUCTORS
  • 2020-09 A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers in TECHNICAL PHYSICS LETTERS
  • 2020-08 Investigation of Anomalous Lasing in Vertical-Cavity Surface-Emitting Lasers of the 850-nm Spectral Range with a Double Oxide Current Aperture at Large Gain-to-Cavity Detuning in OPTICS AND SPECTROSCOPY
  • 2019-11 InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics in TECHNICAL PHYSICS LETTERS
  • 2019-10 Heterobarrier Varactors with Nonuniformly Doped Modulation Layers in TECHNICAL PHYSICS LETTERS
  • 2019-09 The Effect of Active Region Heating on Dynamic and Power Characteristics of Quantum Cascade Lasers Emitting at a Wavelength of 4.8 µm at Room Temperature in OPTICS AND SPECTROSCOPY
  • 2019-08-07 Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers in SEMICONDUCTORS
  • 2019-07 Analysis of the Internal Optical Losses of the Vertical-Cavity Surface-Emitting Laser of the Spectral Range of 1.55 µm Formed by a Plate Sintering Technique in OPTICS AND SPECTROSCOPY
  • 2018-01-17 Optically pumped lasing in a rolled-up dot-in-a-well (DWELL) microtube via the support of Au pad in APPLIED PHYSICS B
  • 2018-01 The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers in TECHNICAL PHYSICS LETTERS
  • 2018-01 Investigation of the Modified Structure of a Quantum Cascade Laser in SEMICONDUCTORS
  • 2018-01 High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review) in TECHNICAL PHYSICS LETTERS
  • 2017-11-03 Optimization of the superlattice parameters for THz diodes in SEMICONDUCTORS
  • 2016-11-06 Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range in SEMICONDUCTORS
  • 2016-01 Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices in JETP LETTERS
  • 2015-10-13 Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice in SEMICONDUCTORS
  • 2015-03 MOVPE of III-N LED structures with short technological process in TECHNICAL PHYSICS LETTERS
  • 2014-08-06 Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots in SEMICONDUCTORS
  • 2013-08-07 (In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties in SEMICONDUCTORS
  • 2013-01-07 Optical anisotropy of InGaAs quantum dots in SEMICONDUCTORS
  • 2012-06-05 Radiation-induced surface degradation of GaAs and high electron mobility transistor structures in SEMICONDUCTORS
  • 2012-05 Monolithic white LEDs: Approaches, technology, design in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2012-05 Studying the formation of self-assembled (In,Mn)As quantum dots in TECHNICAL PHYSICS LETTERS
  • 2012-01-07 Experimental study of frequency multipliers based on a GaAs/AlAs semiconductor superlattices in the terahertz frequency range in SEMICONDUCTORS
  • 2011-10-07 Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures in SEMICONDUCTORS
  • 2011-06-18 Fabrication of ordered GaAs nanowhiskers using electron-beam lithography in SEMICONDUCTORS
  • 2010-11-19 Carrier heating in quantum wells under optical and current injection of electron-hole pairs in SEMICONDUCTORS
  • 2010-10-12 Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots in SEMICONDUCTORS
  • 2010-07-22 MBE growth and characterization of 5-μm quantum-cascade lasers in SEMICONDUCTORS
  • 2010-05-28 MBE growth of 5 μm quantum cascade lasers in TECHNICAL PHYSICS LETTERS
  • 2009-12-12 Semiconductor nanowhiskers: Synthesis, properties, and applications in SEMICONDUCTORS
  • 2009-04-30 On diffusion lengths of Ga adatoms on AlAs(111) and GaAs(111) surfaces in TECHNICAL PHYSICS
  • 2009-04-28 Resonance enhancement of spin-polarized electron emission in SEMICONDUCTORS
  • 2008-12-23 High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm in TECHNICAL PHYSICS LETTERS
  • 2008-11 Deposition-rate dependence of the height of GaAs-nanowires in SEMICONDUCTORS
  • 2007-10 Nucleation at the lateral surface and the shape of whisker nanocrystals in SEMICONDUCTORS
  • 2007-10 The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots in SEMICONDUCTORS
  • 2007-08 Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy in PHYSICS OF THE SOLID STATE
  • 2007-07 Effect of deposition conditions on nanowhisker morphology in SEMICONDUCTORS
  • 2007-05 Optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices in TECHNICAL PHYSICS LETTERS
  • 2007-01 Anomalous dynamic characteristics of semiconductor quantum-dot lasers generating on two quantum states in TECHNICAL PHYSICS LETTERS
  • 2007-01 Direct observation of charge-carrier capture in an array of self-assembled InAs/GaAs quantum dots in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2006-11 Photoemission of polarized electrons from InAlGaAs/GaAs superlattices with minimum conduction band offsets in SEMICONDUCTORS
  • 2006-10 Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs in SEMICONDUCTORS
  • 2006-09 The role of surface diffusion of adatoms in the formation of nanowire crystals in SEMICONDUCTORS
  • 2006-09 Room-temperature 1.3-μm lasing in a microdisk with quantum dots in SEMICONDUCTORS
  • 2006-07 Higher harmonics in the current oscillations in weakly coupled GaAs/AlGaAs superlattices in SEMICONDUCTORS
  • 2006-07 Optical studies of a two-dimensional photonic crystal with the InAs/InGaAs quantum-dot structure as an active region in SEMICONDUCTORS
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