Nikolai Dimitri Zakharov


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Person Info

NAME

Nikolai Dimitri

SURNAME

Zakharov

Publications in SciGraph latest 50 shown

  • 2010-08-18 InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics in SEMICONDUCTORS
  • 2008-08 Structure and optical properties of ZnO nanowires fabricated by pulsed laser deposition on GaN/Si(111) films with the use of Au and NiO catalysts in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2008-01-01 Crystal Lattice Defects in MBE Grown Si Layers Heavily Doped with Er in MICROSCOPY OF SEMICONDUCTING MATERIALS 2007
  • 2008-01-01 Ferroelectric materials and structures suitable for data storage: The role of microscopies in establishing preparation-microstructure-property relations in EMC 2008 14TH EUROPEAN MICROSCOPY CONGRESS 1–5 SEPTEMBER 2008, AACHEN, GERMANY
  • 2007-06 Numerical simulation of the temperature dependence of the photoluminescence spectra of InAs/GaAs quantum dots in PHYSICS OF THE SOLID STATE
  • 2007-02 Resonances related to an array of InAs quantum dots and controlled by an external electric field in SEMICONDUCTORS
  • 2006-05 The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy in SEMICONDUCTORS
  • 2006-02 The band structure and photoluminescence in a Ge0.8Si0.2/Ge0.1Si0.9 superlattice with vertically correlated quantum dots in SEMICONDUCTORS
  • 2005-01 The engineering and properties of InAs quantum dot molecules in a GaAs matrix in SEMICONDUCTORS
  • 2005-01-01 TEM investigation of Si/Ge multilayer structure incorporated into MBE grown Si whiskers in MICROSCOPY OF SEMICONDUCTING MATERIALS
  • 2004-06 Spectroscopy of exciton states of InAs quantum molecules in SEMICONDUCTORS
  • 2004-01 Si/Ge nanostructures for optoelectronics applications in PHYSICS OF THE SOLID STATE
  • 2003-12 Room-temperature 1.5–1.6 µm photoluminescence from InGaAs/GaAs heterostructures grown at low substrate temperature in SEMICONDUCTORS
  • 2003-09 The effect of postgrowth annealing on the structure and optical properties of multilayer Ge/Si heterostructures in TECHNICAL PHYSICS LETTERS
  • 2003-02 Optical properties of structures with ultradense arrays of Ge QDs in an Si matrix in SEMICONDUCTORS
  • 2003 Diffuse x-ray scattering from InGaAs/GaAs quantum dots in MRS ADVANCES
  • 2003 Diffuse x-ray scattering from InGaAs/GaAs quantum dots in MRS ADVANCES
  • 2003 Diffuse x-ray scattering from InGaAs/GaAs quantum dots in MRS ADVANCES
  • 2003 Si/Ge Nanostructures For Led in TOWARDS THE FIRST SILICON LASER
  • 2002 Structural and Optical Properties of the Multilayer Structures Formed by Ge Sub-Critical Insertions in a Si Matrix in MRS ADVANCES
  • 2000-03 Microstructure and electrical properties of textured Sr0.51Ba0.48La0.01Nb2O6 thin films in APPLIED PHYSICS A
  • 2000 Lattice Defects in Epitaxial Ba2Bi4Ti5O18 Thin Films Grown by Pulsed Laser Deposition Onto LaNiO3 Bottom Electrodes in MRS ADVANCES
  • 2000 Origin of Voids at the Interface of Wafer Bonded Sapphire on Sapphire in MRS ADVANCES
  • 1999-11 Substrate temperature dependence of structure and resistivity of SrRuO3 thin films grown by pulsed laser deposition on (100) SrTiO3 in JOURNAL OF MATERIALS RESEARCH
  • 1999 Lattice Defects in SrRuO3 Thin Films and Their Contribution to film Resistivity in MRS ADVANCES
  • 1999 Structure - Property Relationships of Thin Films of Epitaxial Ferroelectric Bismuth-Layered Perovskites with Even and Odd Aurivillius' Parameters in MRS ADVANCES
  • 1998 All Epitaxial Babi4Ti4O15 - LaNiO3 Heterostructures in MRS ADVANCES
  • 1998 Atomic-Scale Structure and Properties of Thin Epitaxial SrRuO3 Films Grown on SrTiO3 (100) by Pulsed Laser Deposition in MRS ADVANCES
  • 1996-10 High resolution transmission electron microscopy study of interface structures and growth defects in epitaxial Bi2Sr2Can−1CunO4+2n + δ films on SrTiO3 and LaAlO3 in JOURNAL OF MATERIALS RESEARCH
  • 1995 Sputtered and Reactively Grown Epitaxial GdAIO3 Films as Buffer Layers for C-Oriented YBa2Cu3O7-δ Films on R-Sapphire in MRS ADVANCES
  • 1993-12 Ordering in InGaAs/InAlAs layers in JOURNAL OF ELECTRONIC MATERIALS
  • 1993-11 Compositional nonuniformities and strain relaxation at misoriented InxGa(1−x)As/GaAs interfaces in JOURNAL OF ELECTRONIC MATERIALS
  • 1992 Investigation of Misfit Dislocation Configurations in Mbe-Grown InGaAs Layers on Misaligned GaAs (001) Substrates in MRS ADVANCES
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