Nikita Y Gordeev Nikita Y Gordeev


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Person Info

NAME

Nikita Y Gordeev Nikita Y

SURNAME

Gordeev

Publications in SciGraph latest 50 shown

  • 2022-02 Increase in the Efficiency of a Tandem Semiconductor Laser–Optical Amplifier Based on Self-Organizing Quantum Dots in SEMICONDUCTORS
  • 2021-12 Saturation Power of a Semiconductor Optical Amplifier Based on Self-Organized Quantum Dots in SEMICONDUCTORS
  • 2021-03 Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots in SEMICONDUCTORS
  • 2020-12 Lateral Mode Tuning in Coupled Ridge Waveguides Using Focused Ion Beam in SEMICONDUCTORS
  • 2019-12-04 InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) in SEMICONDUCTORS
  • 2019-10-01 Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels in SEMICONDUCTORS
  • 2019-02 Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance in SEMICONDUCTORS
  • 2019-02 Lasers Based on Quantum Well-Dots Emitting in the 980- and 1080-nm Optical Ranges in TECHNICAL PHYSICS LETTERS
  • 2018-12-27 Diode Lasers with Near-Surface Active Region in SEMICONDUCTORS
  • 2018-10-18 Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides in SEMICONDUCTORS
  • 2018-09-06 Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates in SEMICONDUCTORS
  • 2018-08 Power Characteristics and Temperature Dependence of the Angular Beam Divergence of Lasers with a Near-Surface Active Region in TECHNICAL PHYSICS LETTERS
  • 2018-02-05 Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers in SEMICONDUCTORS
  • 2013-12-11 Spectral dependence of the linewidth enhancement factor in quantum dot lasers in SEMICONDUCTORS
  • 2013-09-05 Local triboelectrification of an n-GaAs surface using the tip of an atomic-force microscope in SEMICONDUCTORS
  • 2013-08-07 Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio in SEMICONDUCTORS
  • 2012-10-10 Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers in SEMICONDUCTORS
  • 2012-01 Harmonic mode-locking in quantum dot lasers with tunnel-coupled waveguides in TECHNICAL PHYSICS LETTERS
  • 2011-07-08 Effect of the nonlinear saturation of the gain on the peak modulation frequency in lasers based on self-assembled quantum dots in SEMICONDUCTORS
  • 2011-04-16 A temperature-stable semiconductor laser based on coupled waveguides in SEMICONDUCTORS
  • 2010-10-12 A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes in SEMICONDUCTORS
  • 2009-05-06 Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K) in SEMICONDUCTORS
  • 2008-12-23 High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm in TECHNICAL PHYSICS LETTERS
  • 2008-09-30 Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots in SEMICONDUCTORS
  • 2008-06-13 Generation of superradiation in quantum dot nanoheterostructures in SEMICONDUCTORS
  • 2008-03 The role of transport processes of nonequilibrium charge carriers in radiative properties of arrays of InAs/GaAs quantum dots in SEMICONDUCTORS
  • 2006-10 Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs in SEMICONDUCTORS
  • 2006-05 VCSELs based on arrays of sub-monolayer InGaAs quantum dots in SEMICONDUCTORS
  • 2005-12 Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region in SEMICONDUCTORS
  • 2005-04 Temperature dependence of the effective coefficient of Auger recombination in 1.3 μm InAs/GaAs QD lasers in SEMICONDUCTORS
  • 2005-04 Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers in SEMICONDUCTORS
  • 2004-07 Mechanism of dicke superradiance in semiconductor heterostructures in SEMICONDUCTORS
  • 2004-06 Electroluminescent studies of emission characteristics of InGaAsN/GaAs injection lasers in a wide temperature range in SEMICONDUCTORS
  • 2003-10 Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm in SEMICONDUCTORS
  • 2003-01 Electroluminescence of injection lasers based on vertically coupled quantum dots near the lasing threshold in SEMICONDUCTORS
  • 2002-06 Waveguide InGaAsP/InP photodetectors for low-power autocorrelation measurements at 1.55 µm in SEMICONDUCTORS
  • 2001-11 Improved degradation stability of blue-green II-VI light-emitting diodes with excluded nitrogen-doped ZnSe-based layers in SEMICONDUCTORS
  • 2000-03 Treatment of inhomogeneous radiation broadening in quantum dot heterostructures described within the framework of the superradiation model in TECHNICAL PHYSICS LETTERS
  • 1999-12 Superradiance in semiconductors in SEMICONDUCTORS
  • 1999-07 Collective resonances and shape function for homogeneous broadening of the emission spectra of quantum-well semiconductor heterostructures in SEMICONDUCTORS
  • 1998-07 Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 µm in SEMICONDUCTORS
  • 1998-03 Injection lasers based on InGaAs quantum dots in an AlGaAs matrix in JOURNAL OF ELECTRONIC MATERIALS
  • 1998 Optical Switches and Modulators for Integrated Optoelectronic Systems in ADVANCED ELECTRONIC TECHNOLOGIES AND SYSTEMS BASED ON LOW-DIMENSIONAL QUANTUM DEVICES
  • 1998 Modelling Quantum Well Laser Diode Structures in ADVANCED ELECTRONIC TECHNOLOGIES AND SYSTEMS BASED ON LOW-DIMENSIONAL QUANTUM DEVICES
  • 1997-09 Quantum-dot lasers: Principal components of the threshold current density in SEMICONDUCTORS
  • 1997-04 Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix in SEMICONDUCTORS
  • 1997-02 Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C in SEMICONDUCTORS
  • 1997-01 Thermal stability of vertically coupled InAs-GaAs quantum dot arrays in SEMICONDUCTORS
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