Alexey A Toropov


Ontology type: schema:Person     


Person Info

NAME

Alexey A

SURNAME

Toropov

Publications in SciGraph latest 50 shown

  • 2021-04 Two-Dimensional Excitons in Multiple GaN/AlN Monolayer Quantum Wells in JETP LETTERS
  • 2021-02 Source of Indistinguishable Single Photons Based on Epitaxial InAs/GaAs Quantum Dots for Integration in Quantum Computing Schemes in JETP LETTERS
  • 2020-11-04 State-of-the-art and prospects for intense red radiation from core–shell InGaN/GaN nanorods in SCIENTIFIC REPORTS
  • 2020-07 Fourier Transform Limited Linewidth of Optical Transitions in Single SiV Centers in “Adamantane” Nanodiamonds in JETP LETTERS
  • 2019-02 Highly Efficient Semiconductor Emitter of Single Photons in the Red Spectral Range in JETP LETTERS
  • 2018-08-03 Förster Energy Transfer in Arrays of Epitaxial CdSe/ZnSe Quantum Dots Involving Bright and Dark Excitons in PHYSICS OF THE SOLID STATE
  • 2018-08 Single-Photon Emitter at 80 K Based on a Dielectric Nanoantenna with a CdSe/ZnSe Quantum Dot in JETP LETTERS
  • 2018-04-18 Single-Photon Emission from InAs/AlGaAs Quantum Dots in PHYSICS OF THE SOLID STATE
  • 2018-04-17 Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands in SEMICONDUCTORS
  • 2018-04-03 Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy in SEMICONDUCTORS
  • 2018-04-03 Red Single-Photon Emission from InAs/AlGaAs Quantum Dots in SEMICONDUCTORS
  • 2018-03-28 InAs/AlGaAs quantum dots for single-photon emission in a red spectral range in SCIENTIFIC REPORTS
  • 2018-02 Spin-Dependent Electronic Dynamics in a Hybrid Nonresonance III–V/II–VI Heterostructure in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2015-03-13 Defect engineering in AlGaN-based UV optoelectronic heterostructures grown on c-Al2O3 by plasma-assisted molecular beam epitaxy in MRS ADVANCES
  • 2015-02-05 Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites in SEMICONDUCTORS
  • 2014-01-05 Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel in SEMICONDUCTORS
  • 2014-01-05 Molecular beam epitaxy of AlGaAs/Zn(Mn)Se hybrid nanostructures with InAs/AlGaAs quantum dots near the heterovalent interface in SEMICONDUCTORS
  • 2012-08-06 Quantum-confined stark effect and localization of charge carriers in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells with different morphologies in SEMICONDUCTORS
  • 2011-06-18 Excitonic spectrum of the ZnO/ZnMgO quantum wells in SEMICONDUCTORS
  • 2011-02-20 Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells in SEMICONDUCTORS
  • 2010-02 Spin injection in GaAs/GaSb quantum-well heterostructures in SEMICONDUCTORS
  • 2010-01 Plasmonic amplification of single exciton transitions in InGaN in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2009-05-06 Anomalous spin splitting of electrons in type-II InSb quantum dots in InAs in SEMICONDUCTORS
  • 2008-06 Long-lived localized magnetic polarons in ZnMnSe/ZnSSe type-II superlattices in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2008-01-01 Anomalous Spin Splitting of Electrons in InSb Type-II Quantum Dots in an InAs Matrix in NARROW GAP SEMICONDUCTORS 2007
  • 2007-11 Large-magnitude spin polarization of electrons in an InAs-based diode structure in SEMICONDUCTORS
  • 2007-11 CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor in SEMICONDUCTORS
  • 2007-08 Negatively charged excitons in semimagnetic CdSe/ZnSe/ZnMnSe quantum dots in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2007-05 Anomalous electron spin splitting in InAs pumped by injection in SEMICONDUCTORS
  • 2005 Time-resolved Spectroscopy of Excitons Bound at Shallow Neutral Donors in HVPE GaN in MRS ADVANCES
  • 2004-09 Lasing in Cd(Zn)Se/ZnMgSSe heterostructures pumped by nitrogen and InGaN/GaN lasers in SEMICONDUCTORS
  • 2003-11 Excitonic recombination near the mobility edge in CdSe/ZnSe nanostructures in SEMICONDUCTORS
  • 2003-08 Acoustic, optical, and interface phonons in BeTe/ZnSe superlattices in PHYSICS OF THE SOLID STATE
  • 2003-06 Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2002-12 MBE growth and photoluminescent properties of InAsSb/AlSbAs quantum wells in SEMICONDUCTORS
  • 2002-11 ZnMnSe/ZnSSe Type-II semimagnetic superlattices: Growth and magnetoluminescence properties in SEMICONDUCTORS
  • 2002-07 GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronics in SEMICONDUCTORS
  • 2001-05 BeCdSe: A new material for the active region in devices operating in the blue-green region of the spectrum in SEMICONDUCTORS
  • 2001-04 Structural, luminescent, and transport properties of hybrid AlAsSb/InAs/Cd(Mg)Se heterostructures grown by molecular beam epitaxy in SEMICONDUCTORS
  • 2001 Spin Polarization and Injection in ZnMnSe/ZnCdSe Heterostructures in MRS ADVANCES
  • 2001 Photoluminescence and atomic force microscopy studies of InAs/InSb nanostructures grown by MBE in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2001 Interface Engineering in Type-II CdSe/BeTe Quantum Dots in MRS ADVANCES
  • 2000-12 Photoluminescence of Ga1−xInxAsySb1−y solid solutions lattice-matched to InAs in SEMICONDUCTORS
  • 2000 Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum wells in MRS ADVANCES
  • 1999-09 Blue-green ZnSe lasers with a new type of active region in SEMICONDUCTORS
  • 1998-10 Interface optical anisotropy in a heterostructure with different cations and anions in PHYSICS OF THE SOLID STATE
  • 1998-10 Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers in SEMICONDUCTORS
  • 1998-07 Light absorption and refraction due to intersubband transitions of hot electrons in coupled GaAs/AlGaAs quantum wells in SEMICONDUCTORS
  • 1998-06 Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge in TECHNICAL PHYSICS LETTERS
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