Mikhail M Sobolev


Ontology type: schema:Person     


Person Info

NAME

Mikhail M

SURNAME

Sobolev

Publications in SciGraph latest 50 shown

  • 2022-02 Effect of Neutron Irradiation on the Spectrum of Deep-Level Defects in GaAs Grown by Liquid-Phase Epitaxy in a Hydrogen and Argon Atmosphere in SEMICONDUCTORS
  • 2020-10-09 Capacitance Spectroscopy of Heteroepitaxial AlGaAs/GaAs p–i–n Structures in SEMICONDUCTORS
  • 2019-10-01 Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles in SEMICONDUCTORS
  • 2018-04 Spatial and Quantum Confinement of Si Nanoparticles Deposited by Laser Electrodispersion onto Crystalline Si in TECHNICAL PHYSICS LETTERS
  • 2018-02-05 Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers in SEMICONDUCTORS
  • 2016-07-06 Study of deep levels in GaAs p–i–n structures in SEMICONDUCTORS
  • 2015-10-13 Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice in SEMICONDUCTORS
  • 2014-08-06 Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots in SEMICONDUCTORS
  • 2012-01-07 Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs in SEMICONDUCTORS
  • 2011-09-29 Passive mode-locked laser based on quantum dot superlattice in TECHNICAL PHYSICS LETTERS
  • 2011-08-18 Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field in SEMICONDUCTORS
  • 2010-06-27 Wannier-Stark states in a superlattice of InAs/GaAs quantum dots in SEMICONDUCTORS
  • 2009-04-28 Absorption in laser structures with coupled and uncoupled quantum dots in an electric field at room temperature in SEMICONDUCTORS
  • 2008-03 Wannier-stark effect in Ge/Si quantum dot superlattices in SEMICONDUCTORS
  • 2007-08 Polarization dependence of the stark shift in the absorption edge of InGaAs/GaAs quantum dot heterostructures in TECHNICAL PHYSICS LETTERS
  • 2007-06 Stark effect in a multilayer system of coupled InAs/GaAs quantum dots in TECHNICAL PHYSICS LETTERS
  • 2007-02 Localized states in the active region of blue LEDs related to a system of extended defects in TECHNICAL PHYSICS LETTERS
  • 2006-03 Coupling of electron states in the InAs/GaAs quantum dot molecule in SEMICONDUCTORS
  • 2005-09 The Stark shift of the hole states in separate InAs/GaAs quantum dots grown on (100) and (311)A GaAs substrates in SEMICONDUCTORS
  • 2005-01 Localization of holes in an InAs/GaAs quantum-dot molecule in SEMICONDUCTORS
  • 2002-12 Deep levels in the band gap of GaN layers irradiated with protons in SEMICONDUCTORS
  • 2002-09 Stark effect in vertically coupled quantum dots in InAs-GaAs heterostructures in SEMICONDUCTORS
  • 2001-10 Study of electron capture by quantum dots using deep-level transient spectroscopy in SEMICONDUCTORS
  • 2000-02 Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands in SEMICONDUCTORS
  • 1999-05 Metastable population of self-organized InAs/GaAs quantum dots in JOURNAL OF ELECTRONIC MATERIALS
  • 1999-02 Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures in SEMICONDUCTORS
  • 1998-05 High-temperature diode formed by epitaxial GaP layers in TECHNICAL PHYSICS LETTERS
  • 1997-10 Deep-level transient spectroscopy in InAs/GaAs laser structures with vertically coupled quantum dots in SEMICONDUCTORS
  • 1997-01 Cathodoluminescence of p-n-p microstructures in CuInSe2 crystals in SEMICONDUCTORS
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