N A Bert

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Publications in SciGraph latest 50 shown

  • 2015-12 Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures in SEMICONDUCTORS
  • 2015-12 Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials in SEMICONDUCTORS
  • 2015-10 Properties of AlN films deposited by reactive ion-plasma sputtering in SEMICONDUCTORS
  • 2014-11 Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix in SEMICONDUCTORS
  • 2013-09 Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier in SEMICONDUCTORS
  • 2013-06 Features of the structure and defect states in hydrogenated polymorphous silicon films in JETP LETTERS
  • 2011-12 Electron microscopy of GaAs Structures with InAs and as quantum dots in SEMICONDUCTORS
  • 2011-10 Elastic fields and physical properties of surface quantum dots in PHYSICS OF THE SOLID STATE
  • 2009-12 GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process in SEMICONDUCTORS
  • 2009-10 Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs in SEMICONDUCTORS
  • 2009-02 As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus in SEMICONDUCTORS
  • 2008 Stress Relaxation Phenomena in Buried Quantum Dots in SELF-ASSEMBLED QUANTUM DOTS
  • 2006-07 Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature in SEMICONDUCTORS
  • 2005-07 The transition from thermodynamically to kinetically controlled formation of quantum dots in an InAs/GaAs(100) system in SEMICONDUCTORS
  • 2004-10 Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures in SEMICONDUCTORS
  • 2004-03 Dependence of structural and optical properties of QD arrays in an InAs/GaAs system on surface temperature and growth rate in SEMICONDUCTORS
  • 2003-07 Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode in SEMICONDUCTORS
  • 2002-12 Elastic behavior of a spherical inclusion with a given uniaxial dilatation in PHYSICS OF THE SOLID STATE
  • 2000-09 Accumulation of majority charge carriers in GaAs layers containing arsenic nanoclusters in SEMICONDUCTORS
  • 2000-08 TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate in SEMICONDUCTORS
  • 2000-03 Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots in SEMICONDUCTORS
  • 1999-09 Spontaneously assembling periodic composition-modulated InGaAsP structures in SEMICONDUCTORS
  • 1999-08 Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy in SEMICONDUCTORS
  • 1999-05 Spontaneously forming periodic composition-modulated InGaAsP structures in SEMICONDUCTORS
  • 1999-02 Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates in SEMICONDUCTORS
  • 1998-10 Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots in SEMICONDUCTORS
  • 1998-10 Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy in SEMICONDUCTORS
  • 1998-10 Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters in SEMICONDUCTORS
  • 1998-07 Indium layers in low-temperature gallium arsenide: Structure and how it changes under annealing in the temperature range 500–700 °C in SEMICONDUCTORS
  • 1998-06 Self-organizing nanoheterostructures in InGaAsP solid solutions in SEMICONDUCTORS
  • 1998-03 Long-range structural interaction effect in gallium arsenide during ion bombardment in PHYSICS OF THE SOLID STATE
  • 1997-10 Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy in SEMICONDUCTORS
  • 1997-07 Lateral association of vertically coupled quantum dots in SEMICONDUCTORS
  • 1997-01 Photoluminescence of InSb quantum dots in GaAs and GaSb matrices in SEMICONDUCTORS
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