K D Mynbaev

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Publications in SciGraph latest 50 shown

  • 2018-08 Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies in JOURNAL OF ELECTRONIC MATERIALS
  • 2018-04-10 Luminescence studies of HgCdTe- and InAsSb-based quantum-well structures in APPLIED NANOSCIENCE
  • 2018-02-26 Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study in APPLIED NANOSCIENCE
  • 2018-02 Defects in Arsenic Implanted р+–n- and n+–p- Structures Based on MBE Grown CdHgTe Films in RUSSIAN PHYSICS JOURNAL
  • 2017-03 Effect of composition fluctuations on radiative recombination in narrow-gap semiconductor solid solutions in TECHNICAL PHYSICS
  • 2017-02 Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K in SEMICONDUCTORS
  • 2016-07 Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy in RUSSIAN PHYSICS JOURNAL
  • 2016-02 Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates in SEMICONDUCTORS
  • 2016-01 Formation of graphite/sic structures by the thermal decomposition of silicon carbide in SEMICONDUCTORS
  • 2015-11 Optical and thermal properties of phosphors based on lead-silicate glass for high-power white LEDs in TECHNICAL PHYSICS LETTERS
  • 2015-09 Temperature dependence of the carrier lifetime in narrow-gap CdxHg1–xTe solid solutions: Radiative recombination in SEMICONDUCTORS
  • 2015-04 Temperature dependence of the carrier lifetime in CdxHg1 − xTe narrow-gap solid solutions with consideration for Auger processes in SEMICONDUCTORS
  • 2015-03 Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2014-11 Specific features of the hydride vapor-phase epitaxy of nitride materials on a silicon substrate in SEMICONDUCTORS
  • 2014-09 Ce3+:YAG doped glass-ceramics for white light-emitting diode in OPTICAL REVIEW
  • 2014-09 Investigation of light extraction from light emitting module chip-on-board in OPTICAL REVIEW
  • 2014-08 Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted p+-n photodiode structure formation in TECHNICAL PHYSICS LETTERS
  • 2014-03 On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum in SEMICONDUCTORS
  • 2014-02 Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment in SEMICONDUCTORS
  • 2013-12 Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs in OPTO-ELECTRONICS REVIEW
  • 2013-12 Effects of light scattering in optical coatings on energy losses in LED devices in TECHNICAL PHYSICS LETTERS
  • 2013-10 High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy in TECHNICAL PHYSICS
  • 2013-06 Electrical properties of HgCdTe films grown by MOCVD and doped with as in OPTO-ELECTRONICS REVIEW
  • 2013-01 Relaxation of a radiation-damaged layer formed during ion-beam milling of CdHgTe solid solutions in TECHNICAL PHYSICS LETTERS
  • 2012-12 Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates in OPTO-ELECTRONICS REVIEW
  • 2012-10 Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates in SEMICONDUCTORS
  • 2012-09 Analysis of photoconductivity spectra with a strongly delayed photoresponse in TECHNICAL PHYSICS
  • 2012-06 Optical transitions in CdxHg1 − xTe-based quantum wells and their analysis with account for the actual band structure of the material in SEMICONDUCTORS
  • 2012-05 Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates in TECHNICAL PHYSICS LETTERS
  • 2011-10 Photoelectric properties of porous GaN/SiC heterostructures in SEMICONDUCTORS
  • 2011-09 Defect structure of CdxHg1 − xTe films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment in SEMICONDUCTORS
  • 2011-07 Photoluminescence of Hg1 − xCdxTe based heterostructures grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2011-05 Diffusion in porous silicon carbide in PHYSICS OF THE SOLID STATE
  • 2010-12 Photoluminescence of CdHgTe based nanoheterostructures in TECHNICAL PHYSICS LETTERS
  • 2010-12 Photoluminescence of CdHgTe epilayers grown on silicon substrates in TECHNICAL PHYSICS LETTERS
  • 2010-09 Ion milling-assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy in OPTO-ELECTRONICS REVIEW
  • 2009-02 Effect of annealing on the optical and photoelectrical properties of CdxHg1 − xTe heteroepitaxial structures for the middle infrared range in TECHNICAL PHYSICS LETTERS
  • 2008-12 Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching in SEMICONDUCTORS
  • 2008-11 Ion-beam-induced modification of the electrical properties of vacancy-doped mercury cadmium telluride in TECHNICAL PHYSICS LETTERS
  • 2008-09 High-temperature diffusion doping of porous silicon carbide in TECHNICAL PHYSICS LETTERS
  • 2007-12 Impact-ionization-stimulated electroluminescence in isotype n-GaSb/n-AlGaAsSb/n-GaInAsSb heterostructures in TECHNICAL PHYSICS LETTERS
  • 2007-07 Conduction type conversion in ion etching of Au- and Ag-doped narrow-gap HgCdTe single crystal in SEMICONDUCTORS
  • 2007-06 1.5–1.8 μm photoluminescence of MBE-grown HgCdTe films in TECHNICAL PHYSICS LETTERS
  • 2007-02 Dielectric function of quasi-2D semiconductor nanostructures in SEMICONDUCTORS
  • 2007-01 Luminescent properties of GaN-based epitaxial layers and heterostructures grown on porous SiC substrates in TECHNICAL PHYSICS LETTERS
  • 2006-12 Mechanism of misfit stress relaxation during epitaxial growth of GaN on porous SiC substrates in TECHNICAL PHYSICS LETTERS
  • 2006-04 Effect of intraband carrier relaxation on the threshold characteristics of quantum well lasers in SEMICONDUCTORS
  • 2006-01 Doping of epitaxial layers and heterostructures based on HgCdTe in SEMICONDUCTORS
  • 2005-10 Temperature dependence of the threshold current of QW lasers in SEMICONDUCTORS
  • 2005-09 On the role of vacancies in pore formation in the course of anodizing of silicon carbide in PHYSICS OF THE SOLID STATE
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