Karim D Mynbaev


Ontology type: schema:Person     


Person Info

NAME

Karim D

SURNAME

Mynbaev

Publications in SciGraph latest 50 shown

  • 2021-04-15 Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures in JOURNAL OF ELECTRONIC MATERIALS
  • 2021-03 Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction in SEMICONDUCTORS
  • 2021-02-09 Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films in APPLIED NANOSCIENCE
  • 2020-12-04 Optical and Structural Properties of HgCdTe Solid Solutions with a High CdTe Content in SEMICONDUCTORS
  • 2020-06-13 Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE in RUSSIAN PHYSICS JOURNAL
  • 2020-05-16 Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8 in JOURNAL OF ELECTRONIC MATERIALS
  • 2020-03-12 Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy in APPLIED NANOSCIENCE
  • 2020-02 Experimental Study and Simulation of the Spectral Characteristics of LED Heterostructures with an InAs Active Region in TECHNICAL PHYSICS LETTERS
  • 2019-12-04 Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor in SEMICONDUCTORS
  • 2019-10-14 Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers in TECHNICAL PHYSICS
  • 2019-09-10 TEM studies of structural defects in HgTe/HgCdTe quantum wells in APPLIED NANOSCIENCE
  • 2019-06 An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions in TECHNICAL PHYSICS LETTERS
  • 2019-04 Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies in SEMICONDUCTORS
  • 2018-05-15 Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies in JOURNAL OF ELECTRONIC MATERIALS
  • 2018-04-10 Luminescence studies of HgCdTe- and InAsSb-based quantum-well structures in APPLIED NANOSCIENCE
  • 2018-02-26 Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study in APPLIED NANOSCIENCE
  • 2018-02-08 Defects in Arsenic Implanted р+–n- and n+–p- Structures Based on MBE Grown CdHgTe Films in RUSSIAN PHYSICS JOURNAL
  • 2017-03 Effect of composition fluctuations on radiative recombination in narrow-gap semiconductor solid solutions in TECHNICAL PHYSICS
  • 2017-02-10 Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K in SEMICONDUCTORS
  • 2016-07-11 Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy in RUSSIAN PHYSICS JOURNAL
  • 2016-02-19 Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates in SEMICONDUCTORS
  • 2016-01 Formation of graphite/sic structures by the thermal decomposition of silicon carbide in SEMICONDUCTORS
  • 2015-11 Optical and thermal properties of phosphors based on lead-silicate glass for high-power white LEDs in TECHNICAL PHYSICS LETTERS
  • 2015-09-03 Temperature dependence of the carrier lifetime in narrow-gap CdxHg1–xTe solid solutions: Radiative recombination in SEMICONDUCTORS
  • 2015-04-16 Temperature dependence of the carrier lifetime in CdxHg1 − xTe narrow-gap solid solutions with consideration for Auger processes in SEMICONDUCTORS
  • 2015-03-04 Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2014-11-06 Specific features of the hydride vapor-phase epitaxy of nitride materials on a silicon substrate in SEMICONDUCTORS
  • 2014-09 Investigation of light extraction from light emitting module chip-on-board in OPTICAL REVIEW
  • 2014-09 Ce3+:YAG doped glass-ceramics for white light-emitting diode in OPTICAL REVIEW
  • 2014-08-31 Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted p+-n photodiode structure formation in TECHNICAL PHYSICS LETTERS
  • 2014-03-07 On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum in SEMICONDUCTORS
  • 2014-02-14 Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment in SEMICONDUCTORS
  • 2013-12-28 Effects of light scattering in optical coatings on energy losses in LED devices in TECHNICAL PHYSICS LETTERS
  • 2013-10-17 High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy in TECHNICAL PHYSICS
  • 2013-01 Relaxation of a radiation-damaged layer formed during ion-beam milling of CdHgTe solid solutions in TECHNICAL PHYSICS LETTERS
  • 2012-10-10 Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates in SEMICONDUCTORS
  • 2012-09-27 Analysis of photoconductivity spectra with a strongly delayed photoresponse in TECHNICAL PHYSICS
  • 2012-06-05 Optical transitions in CdxHg1 − xTe-based quantum wells and their analysis with account for the actual band structure of the material in SEMICONDUCTORS
  • 2012-05 Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates in TECHNICAL PHYSICS LETTERS
  • 2011-10-07 Photoelectric properties of porous GaN/SiC heterostructures in SEMICONDUCTORS
  • 2011-09-17 Defect structure of CdxHg1 − xTe films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment in SEMICONDUCTORS
  • 2011-07-08 Photoluminescence of Hg1 − xCdxTe based heterostructures grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2011-05-06 Diffusion in porous silicon carbide in PHYSICS OF THE SOLID STATE
  • 2010-12-29 Photoluminescence of CdHgTe based nanoheterostructures in TECHNICAL PHYSICS LETTERS
  • 2010-12-29 Photoluminescence of CdHgTe epilayers grown on silicon substrates in TECHNICAL PHYSICS LETTERS
  • 2009-02 Effect of annealing on the optical and photoelectrical properties of CdxHg1 − xTe heteroepitaxial structures for the middle infrared range in TECHNICAL PHYSICS LETTERS
  • 2008-12-17 Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching in SEMICONDUCTORS
  • 2008-11-28 Ion-beam-induced modification of the electrical properties of vacancy-doped mercury cadmium telluride in TECHNICAL PHYSICS LETTERS
  • 2008-09-30 High-temperature diffusion doping of porous silicon carbide in TECHNICAL PHYSICS LETTERS
  • 2007-12 Impact-ionization-stimulated electroluminescence in isotype n-GaSb/n-AlGaAsSb/n-GaInAsSb heterostructures in TECHNICAL PHYSICS LETTERS
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