Wilfried Vandervorst

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Publications in SciGraph latest 50 shown

  • 2018-12 Mesoscopic physical removal of material using sliding nano-diamond contacts in SCIENTIFIC REPORTS
  • 2018-08 Voltage-controlled reverse filament growth boosts resistive switching memory in NANO RESEARCH
  • 2016-09 All-nanocellulose nonvolatile resistive memory in NPG ASIA MATERIALS
  • 2015-10 Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon in SCIENTIFIC REPORTS
  • 2015-05 Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory in SCIENTIFIC REPORTS
  • 2014-09 Rippling on Wear Scar Surfaces of Nanocrystalline Diamond Films After Reciprocating Sliding Against Ceramic Balls in TRIBOLOGY LETTERS
  • 2014-03 Modeling of junction formation in scaled Si devices in JOURNAL OF COMPUTATIONAL ELECTRONICS
  • 2014-03 Process modeling for doped regions formation on high efficiency crystalline silicon solar cells in JOURNAL OF COMPUTATIONAL ELECTRONICS
  • 2011-04 Compositional characterization of nickel silicides by HAADF-STEM imaging in JOURNAL OF MATERIALS SCIENCE
  • 2008 Chemical analysis of nickel silicides with high spatial resolution by combined EDS and EELS (ELNES) in EMC 2008 14TH EUROPEAN MICROSCOPY CONGRESS 1–5 SEPTEMBER 2008, AACHEN, GERMANY
  • 2007 Probing Semiconductor Technology and Devices with Scanning Spreading Resistance Microscopy in SCANNING PROBE MICROSCOPY
  • 2005-06 Interpretation of TOF–SIMS depth profiles from ultrashallow high-k dielectric stacks assisted by hybrid collisional computer simulation in APPLIED PHYSICS A
  • 2005 Advanced Material Characterization by TOFSIMS in Microelectronic in MATERIALS FOR INFORMATION TECHNOLOGY
  • 2000-07 Investigation of the formation process of MCs+-molecular ions during sputtering in JOURNAL OF THE AMERICAN SOCIETY FOR MASS SPECTROMETRY
  • 1999-03 Investigation of the formation of M2+-molecular ions in sputtering processes in JOURNAL OF THE AMERICAN SOCIETY FOR MASS SPECTROMETRY
  • 1998-06 Quantitation of major elements with secondary ion mass spectrometry by using M2+-molecular ions in JOURNAL OF THE AMERICAN SOCIETY FOR MASS SPECTROMETRY
  • 1990-12 Simultaneous formation of contacts and diffusion barriers for VLSI by rapid thermal silicidation of TiW in APPLIED PHYSICS A
  • 1989 Limitations and Use of Analytical Techniques for ULSI in ESSDERC ’89
  • 1987-01 Quantitative analysis of impurities in suicide layers with SIMS in ANALYTICAL AND BIOANALYTICAL CHEMISTRY
  • 1986 SIMS Depth Profiling of Si in GaAs in SECONDARY ION MASS SPECTROMETRY SIMS V
  • 1986 Sputter-Induced Segregation of As in Si During SIMS Depth Profiling in SECONDARY ION MASS SPECTROMETRY SIMS V
  • 1984 SIMS Depth Profiling of Shallow As Implants in Si and SiO2 in SECONDARY ION MASS SPECTROMETRY SIMS IV
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