Alexander S Usikov


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Person Info

NAME

Alexander S

SURNAME

Usikov

Publications in SciGraph latest 50 shown

  • 2020-05 Studying the Sensitivity of Graphene for Biosensor Applications in TECHNICAL PHYSICS LETTERS
  • 2020-02-10 Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry in SCIENTIFIC REPORTS
  • 2018-06-07 Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System in SEMICONDUCTORS
  • 2018-05-25 Two yellow luminescence bands in undoped GaN in SCIENTIFIC REPORTS
  • 2018-03-28 Photolysis of Doped Gallium Nitride in HIGH ENERGY CHEMISTRY
  • 2017-08-24 Evaluation of the concentration of point defects in GaN in SCIENTIFIC REPORTS
  • 2016-11-30 Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence in SCIENTIFIC REPORTS
  • 2016-09-16 On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena in SEMICONDUCTORS
  • 2016-05 Electrochemical etching of p–n-GaN/AlGaN photoelectrodes in TECHNICAL PHYSICS LETTERS
  • 2015-12-30 Effect of Capping on Electrical and Optical Properties of GaN Layers Grown by HVPE in JOURNAL OF ELECTRONIC MATERIALS
  • 2015-10-13 Radiation hardness of n-GaN schottky diodes in SEMICONDUCTORS
  • 2015-02-13 HVPE GaN with Low Concentration of Point Defects for Power Electronics in MRS ADVANCES
  • 2014-12-17 Defect-Related Luminescence in Undoped GaN Grown by HVPE in JOURNAL OF ELECTRONIC MATERIALS
  • 2014-11-26 Photoelectric converters in a system with spectral splitting of the solar energy in RUSSIAN MICROELECTRONICS
  • 2014-07 Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy in TECHNICAL PHYSICS LETTERS
  • 2013-03-08 Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount in SEMICONDUCTORS
  • 2007-09-25 Deep UV light emitting diodes grown by gas source molecular beam epitaxy in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2007-02 Localized states in the active region of blue LEDs related to a system of extended defects in TECHNICAL PHYSICS LETTERS
  • 2006 Phonon Decay in GaN and AlN and Self-Heating in III-N Devices in MRS ADVANCES
  • 2005-09 Influence of an increase in the implantation dose of erbium ions and annealing temperature on photoluminescence in AlGaN/GaN superlattices and GaN epitaxial layers in SEMICONDUCTORS
  • 2005 InN Nano Rods and Epitaxial Layers Grown by HVPE on Sapphire Substrates and GaN, AlGaN, AlN Templates in MRS ADVANCES
  • 2005-01 Thick AlN layers grown by HVPE on sapphire substrates in MRS ADVANCES
  • 2004-02 Deformation of AlGaN/GaN superlattice layers according to x-ray diffraction data in PHYSICS OF THE SOLID STATE
  • 2004 P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE in MRS ADVANCES
  • 2004 HVPE-Grown AlN-GaN Based Structures for UV Spectral Region in UV SOLID-STATE LIGHT EMITTERS AND DETECTORS
  • 2003 AlGaN/GaN Structures Grown by HVPE: Growth and Characterization in MRS ADVANCES
  • 2002-12 Deep levels in the band gap of GaN layers irradiated with protons in SEMICONDUCTORS
  • 2002-06 Low-temperature time-resolved photoluminescence in InGaN/GaN quantum wells in SEMICONDUCTORS
  • 2002 Lattice constant variation in GaN:Si layers grown by HVPE in MRS ADVANCES
  • 2001 Formation of GaAsN nanoinsertions in a GaN matrix in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2000-11 Internal microstrain and distribution of composition and cathodoluminescence over lapped AlxGa1−xN epilayers on sapphire in SEMICONDUCTORS
  • 2000-11 Nanorelief of a GaN surface: The effect of sulfide treatment in SEMICONDUCTORS
  • 2000-06 Specifics of MOCVD formation of InxGa1−xN inclusions in a GaN matrix in SEMICONDUCTORS
  • 2000-04 Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots in SEMICONDUCTORS
  • 2000-03 On an unusual azimuthal orientational relationship in the system gallium nitride layer on spinel substrate in CRYSTALLOGRAPHY REPORTS
  • 2000 Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
  • 1999-07 Investigation of MOVPE-grown GaN layers doped with As atoms in SEMICONDUCTORS
  • 1999-06 Effect of annealing on the optical and structural properties of GaN:Er in SEMICONDUCTORS
  • 1999-06 Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures in TECHNICAL PHYSICS LETTERS
  • 1999-04 Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence in TECHNICAL PHYSICS LETTERS
  • 1999 Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films in MRS ADVANCES
  • 1999-01 Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0–1.6 µm in SEMICONDUCTORS
  • 1999-01 Enhancement of the efficiency of i-n-GaN light-emitting diodes by electrochemical etching in TECHNICAL PHYSICS LETTERS
  • 1998 Macro- and microstrains in MOCVD-grown GaN in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
  • 1998 Heterostructure for UV LEDs Based on Thick AlGaN Layers in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
  • 1998 Electrochemical Etching in the GaN-Based Technology in MRS ADVANCES
  • 1997-08 Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure in TECHNICAL PHYSICS LETTERS
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    [
      {
        "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
        "affiliation": [
          {
            "affiliation": {
              "id": "http://www.grid.ac/institutes/grid.35915.3b", 
              "type": "Organization"
            }, 
            "isCurrent": true, 
            "type": "OrganizationRole"
          }, 
          {
            "id": "http://www.grid.ac/institutes/grid.472646.5", 
            "type": "Organization"
          }, 
          {
            "id": "http://www.grid.ac/institutes/grid.423485.c", 
            "type": "Organization"
          }, 
          {
            "id": "http://www.grid.ac/institutes/grid.456203.6", 
            "type": "Organization"
          }, 
          {
            "id": "http://www.grid.ac/institutes/grid.4886.2", 
            "type": "Organization"
          }, 
          {
            "id": "http://www.grid.ac/institutes/grid.504068.f", 
            "type": "Organization"
          }
        ], 
        "familyName": "Usikov", 
        "givenName": "Alexander S", 
        "id": "sg:person.010242465455.19", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010242465455.19"
        ], 
        "sdDataset": "persons", 
        "sdDatePublished": "2022-01-01T19:57", 
        "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
        "sdPublisher": {
          "name": "Springer Nature - SN SciGraph project", 
          "type": "Organization"
        }, 
        "sdSource": "s3://com-springernature-scigraph/baseset/20220101/entities/gbq_results/person/person_851.jsonl", 
        "type": "Person"
      }
    ]
     

    Download the RDF metadata as:  json-ld nt turtle xml License info

    HOW TO GET THIS DATA PROGRAMMATICALLY:

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    This table displays all metadata directly associated to this object as RDF triples.

    26 TRIPLES      10 PREDICATES      16 URIs      7 LITERALS      2 BLANK NODES

    Subject Predicate Object
    1 sg:person.010242465455.19 schema:affiliation Nf9345368fa0f40b7a028e3b1bfd77ee7
    2 grid-institutes:grid.423485.c
    3 grid-institutes:grid.456203.6
    4 grid-institutes:grid.472646.5
    5 grid-institutes:grid.4886.2
    6 grid-institutes:grid.504068.f
    7 schema:familyName Usikov
    8 schema:givenName Alexander S
    9 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010242465455.19
    10 schema:sdDatePublished 2022-01-01T19:57
    11 schema:sdLicense https://scigraph.springernature.com/explorer/license/
    12 schema:sdPublisher N0d13215c866d4322a2b313fe306c58e0
    13 sgo:license sg:explorer/license/
    14 sgo:sdDataset persons
    15 rdf:type schema:Person
    16 N0d13215c866d4322a2b313fe306c58e0 schema:name Springer Nature - SN SciGraph project
    17 rdf:type schema:Organization
    18 Nf9345368fa0f40b7a028e3b1bfd77ee7 schema:affiliation grid-institutes:grid.35915.3b
    19 sgo:isCurrent true
    20 rdf:type schema:OrganizationRole
    21 grid-institutes:grid.35915.3b schema:Organization
    22 grid-institutes:grid.423485.c schema:Organization
    23 grid-institutes:grid.456203.6 schema:Organization
    24 grid-institutes:grid.472646.5 schema:Organization
    25 grid-institutes:grid.4886.2 schema:Organization
    26 grid-institutes:grid.504068.f schema:Organization
     




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