Pavel A Ivanov


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Person Info

NAME

Pavel A

SURNAME

Ivanov

Publications in SciGraph latest 50 shown

  • 2021-04 High-Voltage 4H-SiC-Based Avalanche Diodes with a Negative Bevel in SEMICONDUCTORS
  • 2021-03 High-Voltage Avalanche 4H-SiC Diodes with a Protective Semi-Insulating Area in TECHNICAL PHYSICS LETTERS
  • 2021-02-19 High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination in SEMICONDUCTORS
  • 2021-02-19 TCAD Simulation of High-Voltage 4H-SiC Diodes with an Edge Semi-Insulating Region in SEMICONDUCTORS
  • 2020-12-11 Avalanche Breakdown in 4H-SiC Schottky Diodes: Reliability Aspects in TECHNICAL PHYSICS
  • 2020-08-31 High-Voltage Fast Recovery Avalanche Diodes on Silicon Carbide in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2020-06 Formation of SiC Mesastructures with Gently Sloping Sidewalls by Dry Selective Etching through a Photoresist Mask in TECHNICAL PHYSICS
  • 2020-02 Edge-Termination Technique for High-Voltage Mesa-Structure 4H-SiC Devices: Negative Beveling in SEMICONDUCTORS
  • 2020-01 Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode in SEMICONDUCTORS
  • 2019-12-04 Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs in SEMICONDUCTORS
  • 2019-10-01 Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes in SEMICONDUCTORS
  • 2019-06-10 Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation in SEMICONDUCTORS
  • 2019-03 Simulation of Transient Processes in 4H-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS Module of the SILVACO TCAD Software Package) in SEMICONDUCTORS
  • 2018-11-07 Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+–n0–n+ Diodes in SEMICONDUCTORS
  • 2018-09-06 Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes in SEMICONDUCTORS
  • 2018-06-29 Influence of Dopant Incomplete Ionization on the Capacitance of a Reverse-Biased 4H-SiC p+−i−n+ Diode in TECHNICAL PHYSICS
  • 2018-03 The Influence of Heat Treatment on the Electrical Characteristics of Semi-Insulating SiC Layers Obtained by Irradiating n-SiC with High-Energy Argon Ions in TECHNICAL PHYSICS LETTERS
  • 2018-02 4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers in TECHNICAL PHYSICS LETTERS
  • 2018-01 On the Spatial Localization of Free Electrons in 4H-SiC MOSFETS with an n Channel in SEMICONDUCTORS
  • 2018-01 Generation of High-Voltage Pulses by Sharp-Recovery SiC Drift Diodes (n-Base versus p-Base Diodes) in TECHNICAL PHYSICS
  • 2017-09-03 Transient switch-off of a 4H-SiC bipolar transistor from the deep-saturation mode in SEMICONDUCTORS
  • 2017-03-16 Current–voltage characteristics of high-voltage 4H-SiC p+–n0–n+ diodes in the avalanche breakdown mode in SEMICONDUCTORS
  • 2016-07-06 Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC in SEMICONDUCTORS
  • 2016-07-06 Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films in SEMICONDUCTORS
  • 2016-05-15 Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers in SEMICONDUCTORS
  • 2016-02 Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation in TECHNICAL PHYSICS
  • 2016-01 Parameters of silicon carbide diode avalanche shapers for the picosecond range in TECHNICAL PHYSICS LETTERS
  • 2015-11-04 Dynamic characteristics of 4H-SiC drift step recovery diodes in SEMICONDUCTORS
  • 2015-08-02 Capacitance-voltage characteristics of (Al/Ti)/Al2O3/n-GaN MIS structures in SEMICONDUCTORS
  • 2015-07-01 Resistance of 4H-SiC Schottky barriers at high forward-current densities in SEMICONDUCTORS
  • 2015-07-01 Effect of impurity impact ionization on the dynamic characteristics of 4H-SiC p+–n––n+ diodes at low temperatures (77 K) in SEMICONDUCTORS
  • 2015-06-25 High-voltage sharp-recovery 4H:SiC drift diodes: Theoretical estimation of limiting parameters in TECHNICAL PHYSICS
  • 2013-08-07 Transient processes in high-voltage silicon carbide bipolar-junction transistors in SEMICONDUCTORS
  • 2013-01-07 Effect of rapid thermal annealing on the current-voltage characteristics of 4H-SiC Schottky diodes in SEMICONDUCTORS
  • 2012-04-18 Subnanosecond 4H-SiC diode current breakers in SEMICONDUCTORS
  • 2012-04-18 Low-temperature (77–300 K) current-voltage characteristics of 4H-SiC p+-p-n+ diodes: Effect of impurity breakdown in the p-type base in SEMICONDUCTORS
  • 2012-03-16 Leakage currents in 4H-SiC JBS diodes in SEMICONDUCTORS
  • 2011-10-07 A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantation in SEMICONDUCTORS
  • 2011-10-07 I-V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier in SEMICONDUCTORS
  • 2011-05-15 High-voltage (3.3 kV) 4H-SiC JBS diodes in SEMICONDUCTORS
  • 2011-04 Features of degradation in high-voltage 4H-SiC p-i-n diodes under the action of forward current pulses in TECHNICAL PHYSICS LETTERS
  • 2010-07-22 Bistable low temperature (77 K) impurity breakdown in p-type 4H-SiC in SEMICONDUCTORS
  • 2010-05-09 Excess leakage currents in high-voltage 4H-SiC Schottky diodes in SEMICONDUCTORS
  • 2009-09-15 Experimental 4H-SiC junction-barrier Schottky (JBS) diodes in SEMICONDUCTORS
  • 2009-05-06 Effect of annealing on the effective barrier height and ideality factor of nickel Schottky contacts to 4H-SiC in SEMICONDUCTORS
  • 2009-04-28 High-voltage (1800 V) planar 4H-SiC p-n junctions with floating guard rings in SEMICONDUCTORS
  • 2009-02-10 Analysis of forward current-voltage characteristics of nonideal Ti/4H-SiC Schottky barriers in SEMICONDUCTORS
  • 2008-07-29 Interfacial transformations in the a-SiC/a-Si/6H-SiC structure caused by high-temperature (1500°C) annealing in TECHNICAL PHYSICS LETTERS
  • 2008-07-11 Pulsed breakdown of 4H-SiC Schottky diodes terminated with a boron-implanted p-n junction in SEMICONDUCTORS
  • 2008-02 High-voltage (900 V) 4 H-SiC Schottky diodes with a boron-implanted guard p-n junction in SEMICONDUCTORS
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