Martín Jaraiz


Ontology type: schema:Person     


Person Info

NAME

Martín

SURNAME

Jaraiz

Publications in SciGraph latest 50 shown

  • 2020-07-11 DFT-Based Microkinetic Simulations: A Bridge Between Experiment and Theory in Synthetic Chemistry in NEW DIRECTIONS IN THE MODELING OF ORGANOMETALLIC REACTIONS
  • 2008 Atomistic Simulation and Subsequent Optimization of Boron USJ Using Pre-Amorphization and High Ramp Rates Annealing in MRS ADVANCES
  • 2007-01-01 Atomistic Modeling of Defect Diffusion in SiGe in SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007
  • 2006 Modeling and Simulation of the Influence of SOI Structure on Damage Evolution and Ultra-shallow Junction Formed by Ge Preamorphization Implants and Solid Phase Epitaxial Regrowth in MRS ADVANCES
  • 2004 Atomistic Simulations in Materials Processing in PREDICTIVE SIMULATION OF SEMICONDUCTOR PROCESSING
  • 2001 Atomistic Front-End Process Modelling: A Powerful Tool for Deep-Submicron Device Fabrication in SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001
  • 2000-06 Simulation of Defects and Diffusion Phenomena in Silicon in MRS BULLETIN
  • 2000 Atomistic Modeling of Complex Silicon Processing Scenarios in MRS ADVANCES
  • 2000 The Effect of Carbon/Self-Interstitial Clusters on Carbon Diffusion in Silicon Modeled by Kinetic Monte Carlo Simulations in MRS ADVANCES
  • 1999 Ostwald Ripening of {113} Defects Precursors and Transient Enhanced Diffusion in MRS ADVANCES
  • 1998 Monte Carlo Atomistic Simulation of Polycrystalline Aluminum Deposition in MRS ADVANCES
  • 1998 Multiscale Modeling of the Implantation and Annealing of Silicon Devices in SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 1998
  • 1998 Atomistic Modeling of Point and Extended Defects in Crystalline Materials in MRS ADVANCES
  • 1997 Atomistic Model of Transient Enhanced Diffusion and Clustering of Boron In Silicon in MRS ADVANCES
  • 1995 Atomic Scale Simulations of Arsenic Ion Implantation and Annealing in Silicon in MRS ADVANCES
  • 1994 On the Forward Conduction Mechanisms in SiC P-N Junctions in MRS ADVANCES
  • 1992 Effects of Near-Interface Defects on the Optical Properties of MBE Grown GaAs/AlGaAs Layers in CRUCIAL ISSUES IN SEMICONDUCTOR MATERIALS AND PROCESSING TECHNOLOGIES
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