A V Sakharov


Ontology type: schema:Person     


Person Info

NAME

A V

SURNAME

Sakharov

Publications in SciGraph latest 50 shown

  • 2018-01 High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review) in TECHNICAL PHYSICS LETTERS
  • 2018-01 Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells in SEMICONDUCTORS
  • 2017-09 Photonic-crystal waveguide for the second-harmonic generation in PHYSICS OF THE SOLID STATE
  • 2017-01 InGaN/GaN light-emitting diode microwires of submillimeter length in SEMICONDUCTORS
  • 2016-11 Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel in TECHNICAL PHYSICS LETTERS
  • 2016-11 Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells in SEMICONDUCTORS
  • 2016-10 effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis in SEMICONDUCTORS
  • 2016-10 Metamaterial for efficient second harmonic generation in TECHNICAL PHYSICS LETTERS
  • 2016-09 Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs in SEMICONDUCTORS
  • 2016-07 The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial in TECHNICAL PHYSICS LETTERS
  • 2016-05 Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source in TECHNICAL PHYSICS LETTERS
  • 2016-04 The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy in TECHNICAL PHYSICS LETTERS
  • 2016-02 Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation in SEMICONDUCTORS
  • 2015-10 The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy in TECHNICAL PHYSICS LETTERS
  • 2015-08 Capacitance-voltage characteristics of (Al/Ti)/Al2O3/n-GaN MIS structures in SEMICONDUCTORS
  • 2015-03 MOVPE of III-N LED structures with short technological process in TECHNICAL PHYSICS LETTERS
  • 2015-01 Optical lattices of excitons in InGaN/GaN quantum well systems in SEMICONDUCTORS
  • 2014-07 Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy in TECHNICAL PHYSICS LETTERS
  • 2014-05 Synthesis of GaN nano- and microwire crystals induced by a titanium nanolayer in TECHNICAL PHYSICS LETTERS
  • 2014-05 Properties of InGaN/GaN heterostructures obtained using growth interruption under various conditions in TECHNICAL PHYSICS LETTERS
  • 2014-01 Synthesis of an LED structure on the and (0001) faces of mesa stripes grown by selective-area epitaxy in TECHNICAL PHYSICS LETTERS
  • 2014-01 Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers in SEMICONDUCTORS
  • 2013-12 Strain relaxation in multilayer III–N structures on Si(111) substrates in CRYSTALLOGRAPHY REPORTS
  • 2013-09 Resonance Bragg structure with double InGaN quantum wells in PHYSICS OF THE SOLID STATE
  • 2012-10 InGaN/GaN heterostructures grown by submonolayer deposition in SEMICONDUCTORS
  • 2012-10 Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region in SEMICONDUCTORS
  • 2012-05 Monolithic white LEDs: Approaches, technology, design in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2012-02 Emission of terahertz radiation from selectively doped AlGaN/GaN heterostructures under the heating of two-dimensional electrons by an electric field in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2010-07 Structural and optical properties of InAlN/GaN distributed Bragg reflectors in SEMICONDUCTORS
  • 2010-06 A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices in SEMICONDUCTORS
  • 2010-06 Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes in SEMICONDUCTORS
  • 2010-01 Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes in SEMICONDUCTORS
  • 2010-01 Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes in SEMICONDUCTORS
  • 2009-11 Indium-rich island structures formed by in-situ nanomasking technology in TECHNICAL PHYSICS LETTERS
  • 2009-07 Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers in SEMICONDUCTORS
  • 2009-06 Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix in SEMICONDUCTORS
  • 2009-04 AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs in SEMICONDUCTORS
  • 2008-12 AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy in SEMICONDUCTORS
  • 2008-11 InGaAlN heterostructures for LEDs grown on patterned sapphire substrates in TECHNICAL PHYSICS LETTERS
  • 2008-10 Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots in SEMICONDUCTORS
  • 2008-06 Energy characteristics of excitons in structures based on InGaN alloys in SEMICONDUCTORS
  • 2008-02 Photoluminescence of localized excitons in InGan quantum dots in SEMICONDUCTORS
  • 2007-10 The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots in SEMICONDUCTORS
  • 2006-10 Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs in SEMICONDUCTORS
  • 2005-07 Stresses in selectively oxidized GaAs/(AlGa)xOy structures in SEMICONDUCTORS
  • 2005-01 Special features of structural interaction in (AlGaIn)N/GaN heterostructures used as dislocation filters in SEMICONDUCTORS
  • 2004-11 MOCVD-grown AlGaN/GaN heterostructures with high electron mobility in SEMICONDUCTORS
  • 2004-06 Growth of AlGaN epitaxial layers and AlGaN/GaN superlattices by metal-organic chemical vapor deposition in SEMICONDUCTORS
  • 2004 MOCVD Growth of AlGaN Epilayers and AlGaN/GaN SLs in a Wide Composition Range in UV SOLID-STATE LIGHT EMITTERS AND DETECTORS
  • 2001-07 1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them in SEMICONDUCTORS
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