Alexey V Sakharov

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Alexey V



Publications in SciGraph latest 50 shown

  • 2020-12 The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE in TECHNICAL PHYSICS LETTERS
  • 2020-10 A TEM Study of AlN–AlGaN–GaN Multilayer Buffer Structures on Silicon Substrates in TECHNICAL PHYSICS LETTERS
  • 2019-12-23 Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells in SEMICONDUCTORS
  • 2019-12 Selective Epitaxy of Submicron GaN Structures in SEMICONDUCTORS
  • 2019-12 GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography in PHYSICS OF THE SOLID STATE
  • 2019-12 Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam in SEMICONDUCTORS
  • 2019-07 Insulating GaN Epilayers Co-Doped with Iron and Carbon in TECHNICAL PHYSICS LETTERS
  • 2018-12-27 Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs in SEMICONDUCTORS
  • 2018-09-06 Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography in SEMICONDUCTORS
  • 2018-07 The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas in TECHNICAL PHYSICS LETTERS
  • 2018-01 High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review) in TECHNICAL PHYSICS LETTERS
  • 2018-01 Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells in SEMICONDUCTORS
  • 2017-09-20 Photonic-crystal waveguide for the second-harmonic generation in PHYSICS OF THE SOLID STATE
  • 2017-01 InGaN/GaN light-emitting diode microwires of submillimeter length in SEMICONDUCTORS
  • 2016-11-06 Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells in SEMICONDUCTORS
  • 2016-11 Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel in TECHNICAL PHYSICS LETTERS
  • 2016-10-11 effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis in SEMICONDUCTORS
  • 2016-10 Metamaterial for efficient second harmonic generation in TECHNICAL PHYSICS LETTERS
  • 2016-09-16 Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs in SEMICONDUCTORS
  • 2016-07 The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial in TECHNICAL PHYSICS LETTERS
  • 2016-05 Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source in TECHNICAL PHYSICS LETTERS
  • 2016-04 The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy in TECHNICAL PHYSICS LETTERS
  • 2016-02-19 Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation in SEMICONDUCTORS
  • 2015-10 The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy in TECHNICAL PHYSICS LETTERS
  • 2015-08-02 Capacitance-voltage characteristics of (Al/Ti)/Al2O3/n-GaN MIS structures in SEMICONDUCTORS
  • 2015-03 MOVPE of III-N LED structures with short technological process in TECHNICAL PHYSICS LETTERS
  • 2015-02-05 Resonant Bragg structures based on III-nitrides in JOURNAL OF MATERIALS RESEARCH
  • 2015-01-08 Optical lattices of excitons in InGaN/GaN quantum well systems in SEMICONDUCTORS
  • 2014-07 Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy in TECHNICAL PHYSICS LETTERS
  • 2014-05 Synthesis of GaN nano- and microwire crystals induced by a titanium nanolayer in TECHNICAL PHYSICS LETTERS
  • 2014-05 Properties of InGaN/GaN heterostructures obtained using growth interruption under various conditions in TECHNICAL PHYSICS LETTERS
  • 2014-01-05 Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers in SEMICONDUCTORS
  • 2014-01 Synthesis of an LED structure on the and (0001) faces of mesa stripes grown by selective-area epitaxy in TECHNICAL PHYSICS LETTERS
  • 2013-12-28 Strain relaxation in multilayer III–N structures on Si(111) substrates in CRYSTALLOGRAPHY REPORTS
  • 2013-09-05 Resonance Bragg structure with double InGaN quantum wells in PHYSICS OF THE SOLID STATE
  • 2012-10-10 Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region in SEMICONDUCTORS
  • 2012-10-10 InGaN/GaN heterostructures grown by submonolayer deposition in SEMICONDUCTORS
  • 2012-05 Monolithic white LEDs: Approaches, technology, design in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2012-02 Emission of terahertz radiation from selectively doped AlGaN/GaN heterostructures under the heating of two-dimensional electrons by an electric field in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2010-07-22 Structural and optical properties of InAlN/GaN distributed Bragg reflectors in SEMICONDUCTORS
  • 2010-06-27 Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes in SEMICONDUCTORS
  • 2010-06-27 A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices in SEMICONDUCTORS
  • 2010-01-26 Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes in SEMICONDUCTORS
  • 2010-01-26 Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes in SEMICONDUCTORS
  • 2009-11-18 Indium-rich island structures formed by in-situ nanomasking technology in TECHNICAL PHYSICS LETTERS
  • 2009-07-11 Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers in SEMICONDUCTORS
  • 2009-06-09 Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix in SEMICONDUCTORS
  • 2009-04-28 AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs in SEMICONDUCTORS
  • 2008-12-17 AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy in SEMICONDUCTORS
  • 2008-11-28 InGaAlN heterostructures for LEDs grown on patterned sapphire substrates in TECHNICAL PHYSICS LETTERS
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