A V Novikov

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Publications in SciGraph latest 50 shown

  • 2018-12 On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates in SEMICONDUCTORS
  • 2018-12 Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures in SCIENTIFIC REPORTS
  • 2018-11 Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates in SEMICONDUCTORS
  • 2018-11 Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics in SEMICONDUCTORS
  • 2018-09 Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface in SEMICONDUCTORS
  • 2018-08 Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate in TECHNICAL PHYSICS LETTERS
  • 2018-04 A New Limitation of the Depth Resolution in TOF-SIMS Elemental Profiling: the Influence of a Probing Ion Beam in TECHNICAL PHYSICS LETTERS
  • 2018-03 Visible Emission from a Dense Biexciton Gas in SiGe/Si Quantum Wells under External Anisotropic Strain in JETP LETTERS
  • 2018-01 Strain-Induced Intrinsic Splitting of the Biexciton Ground State in SiGe/Si Quantum Wells in JOURNAL OF RUSSIAN LASER RESEARCH
  • 2018-01 Visible Luminescence of SiGe/Si Quantum Wells Under an External Anisotropic Deformation in JOURNAL OF RUSSIAN LASER RESEARCH
  • 2017-12 Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen in SEMICONDUCTORS
  • 2017-12 Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells in SEMICONDUCTORS
  • 2017-12 Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations in SEMICONDUCTORS
  • 2017-11 Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate in SEMICONDUCTORS
  • 2017-11 Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates in SEMICONDUCTORS
  • 2017-05 On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates in SEMICONDUCTORS
  • 2017-03 Phase transitions in a two-dimensional system of dipolar excitons in a double-well SiGe/Si heterostructure in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2017-02 Heating and evaporation of a two-dimensional electron–hole liquid by heat pulses in JETP LETTERS
  • 2016-12 Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures in SEMICONDUCTORS
  • 2016-12 On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells in SEMICONDUCTORS
  • 2016-12 Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers in SEMICONDUCTORS
  • 2016-11 Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands in SEMICONDUCTORS
  • 2016-11 Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method in SEMICONDUCTORS
  • 2016-08 Fine structure of the emission spectrum of a two-dimensional electron–hole liquid in SiGe/Si quantum wells in JETP LETTERS
  • 2016-08 Plasmonic enhancement of four-particle radiative recombination in SiGe quantum wells in JETP LETTERS
  • 2016-03 Nonlinear calibration curves in secondary ion mass spectrometry for quantitative analysis of gesi heterostructures with nanoclusters in TECHNICAL PHYSICS LETTERS
  • 2016-02 Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements in SEMICONDUCTORS
  • 2015-12 Multiparticle states and the factors that complicate an experimental observation of the quantum coherence in the exciton gas of SiGe/Si quantum wells in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2015-11 Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy in SEMICONDUCTORS
  • 2015-11 Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands in SEMICONDUCTORS
  • 2015-11 Hodographs in diode-structure diagnostics in SEMICONDUCTORS
  • 2015-11 Segregation of Sb in Ge epitaxial layers and its usage for the selective doping of Ge-based structures in SEMICONDUCTORS
  • 2015-08 Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer in SEMICONDUCTORS
  • 2015-07 The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer in TECHNICAL PHYSICS LETTERS
  • 2015-01 Influence of Boron Selective Doping on the Edge Luminescence of SiGe/Si Quantum Wells in JOURNAL OF RUSSIAN LASER RESEARCH
  • 2015-01 Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates in SEMICONDUCTORS
  • 2014-08 Quantitative calibration and germanium SIMS depth profiling in GexSi1 − x/Si heterostructures in SEMICONDUCTORS
  • 2014-07 A new approach to the diagnostics of nanoislands in GexSi1 − x/Si heterostructures by secondary ion mass spectrometry in TECHNICAL PHYSICS LETTERS
  • 2014-03 Use of related parameters in X-ray diffraction analysis of multilayer structures with allowance for the layer growth time in TECHNICAL PHYSICS
  • 2013-11 Dynamics of the phase transitions in the system of nonequilibrium charge carriers in quantum-dimensional Si1 − xGex/Si structures in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2013-11 Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures in SEMICONDUCTORS
  • 2013-11 Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy in SEMICONDUCTORS
  • 2013-03 Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers in SEMICONDUCTORS
  • 2012-12 Method for taking into account the shift parameter in the deconvolution of the depth composition distribution of semiconductor structures from SIMS depth profiles in SEMICONDUCTORS
  • 2012-12 Optical monitoring of technological parameters during molecular-beam epitaxy in SEMICONDUCTORS
  • 2012-11 Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands in SEMICONDUCTORS
  • 2012-11 Barrier-height modification in Schottky silicon diodes with highly doped 3D and 2D layers in SEMICONDUCTORS
  • 2012-09 Photoluminescence excitation spectroscopy technique modified for studying structures with self-assembled Ge(Si)/Si(001) nanoislands in TECHNICAL PHYSICS LETTERS
  • 2012-07 Layer-by-layer analysis of structures containing δ-layers by secondary ion mass spectrometry taking into account the TOF.SIMS-5 depth resolution function in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2012-05 Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si1 − xGex buffer layers in SEMICONDUCTORS
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