Petr S Kop'Ev


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Person Info

NAME

Petr S

SURNAME

Kop'Ev

Publications in SciGraph latest 50 shown

  • 2020-12-04 Radiative Recombination and Impact Ionization in Semiconductor Nanostructures (a Review) in SEMICONDUCTORS
  • 2020-12 Electroluminescence in Heterostructures GaSb/AlSb/InAsSb Due to Tunneling Mechanism of Radiative Recombination in SEMICONDUCTORS
  • 2020-04-28 Single-Mode Lasers (1050 nm) of Mesa-Stripe Design Based on an AlGaAs/GaAs Heterostructure with an Ultra-Narrow Waveguide in SEMICONDUCTORS
  • 2020-04-28 Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide in SEMICONDUCTORS
  • 2014-05-07 Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures in SEMICONDUCTORS
  • 2013-08-07 AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide in SEMICONDUCTORS
  • 2013-06-28 A scanning pulse-periodic laser based on heterostructures containing ZnSe with electron beam pumping in OPTICS AND SPECTROSCOPY
  • 2010-01 Plasmonic amplification of single exciton transitions in InGaN in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2009-09 Pulsed heating of active elements of low-threshold electron-beam-pumped green lasers based on nanostructures of II–VI compounds in OPTICS AND SPECTROSCOPY
  • 2003-06 Electron paramagnetic resonance in neutron-transmutation-doped semiconductors with a changed isotopic composition in PHYSICS OF THE SOLID STATE
  • 2002-11 ZnMnSe/ZnSSe Type-II semimagnetic superlattices: Growth and magnetoluminescence properties in SEMICONDUCTORS
  • 2002-07 GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronics in SEMICONDUCTORS
  • 2002-06 Waveguide InGaAsP/InP photodetectors for low-power autocorrelation measurements at 1.55 µm in SEMICONDUCTORS
  • 2001-11 Improved degradation stability of blue-green II-VI light-emitting diodes with excluded nitrogen-doped ZnSe-based layers in SEMICONDUCTORS
  • 2001 Spin Polarization and Injection in ZnMnSe/ZnCdSe Heterostructures in MRS ADVANCES
  • 2001 Photoluminescence and atomic force microscopy studies of InAs/InSb nanostructures grown by MBE in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2001 Asymmetric Hybrid Al(Ga)SbAs/InAs/Cd(Mg)Se Heterostructures for Mid-IR LEDS and Lasers in MRS ADVANCES
  • 2000-04 Aleksandr Aleksandrovich Rogachev in SEMICONDUCTORS
  • 2000-01 A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate in SEMICONDUCTORS
  • 1999-12 Superradiance in semiconductors in SEMICONDUCTORS
  • 1999-08 Submillimeter photoconductivity of two-dimensional electron structures in Corbino geometry in SEMICONDUCTORS
  • 1999-08 Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures in SEMICONDUCTORS
  • 1999-06 Quantum-dot injection heterolaser with 3.3 W output power in TECHNICAL PHYSICS LETTERS
  • 1999-04 Influence of heating of the active region in InGaAsP/InP injection lasers on their spectral characteristics in TECHNICAL PHYSICS LETTERS
  • 1999-02 Observation of a hybridization gap in cyclotron resonance spectra of semimetallic InAs/GaSb quantum wells in JETP LETTERS
  • 1999 Mbe Growth, Structural and Optical Characterization of Inas/Ingaaias Self-Organized Quantum Dots in MRS ADVANCES
  • 1999 MBE Growth and Characterization of Composite InAlAs/In(Ga)As Vertically Aligned Quantum Dots in MRS ADVANCES
  • 1998-11 On the nature of the oscillations of cyclotron absorption in InAs/GaSb quantum wells in JETP LETTERS
  • 1998-10 Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers in SEMICONDUCTORS
  • 1998-05 Structural characterization of self-organized nanostructures in PHYSICS OF THE SOLID STATE
  • 1998-02 RT lasing via nanoscale CdSe islands in a (Zn,Mg)(S,Se) matrix in JOURNAL OF ELECTRONIC MATERIALS
  • 1998 Optical Switches and Modulators for Integrated Optoelectronic Systems in ADVANCED ELECTRONIC TECHNOLOGIES AND SYSTEMS BASED ON LOW-DIMENSIONAL QUANTUM DEVICES
  • 1998 Modelling Quantum Well Laser Diode Structures in ADVANCED ELECTRONIC TECHNOLOGIES AND SYSTEMS BASED ON LOW-DIMENSIONAL QUANTUM DEVICES
  • 1997-10 Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy in SEMICONDUCTORS
  • 1997-04 Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement in TECHNICAL PHYSICS LETTERS
  • 1997-02 Optical properties of submonolayer CdSe-(Zn,Mg)(S,Se) structures in SEMICONDUCTORS
  • 1997-02 Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W in TECHNICAL PHYSICS LETTERS
  • 1997-01 Photoluminescence of InSb quantum dots in GaAs and GaSb matrices in SEMICONDUCTORS
  • 1997 InGaAs/GaAs Quantum Dot Lasers in OPTICAL SPECTROSCOPY OF LOW DIMENSIONAL SEMICONDUCTORS
  • 1996 3D Arrays of Quantum Dots for Laser Applications in MRS ADVANCES
  • 1996 Tem Structural Characterization of Nm-Scale Islands in Highly Mismatched Systems in MRS ADVANCES
  • 1996 MBE Growth of (In,Ga)As Self-Assembled Quantum Dots for Optoeletronic Applications in DEVICES BASED ON LOW-DIMENSIONAL SEMICONDUCTOR STRUCTURES
  • 1996 Hot Photoluminescence and Electron-Phonon Interaction in GaAs/AIAs MQW Structures in HOT CARRIERS IN SEMICONDUCTORS
  • 1995 Formation of Stacked Self-Assembled InAs Quantum Dots in GaAs Matrix for Laser Applications in MRS ADVANCES
  • 1988 Recombination Processes in GaAs/AlGaAs Multi-Quantum Well Structures in LASER OPTICS OF CONDENSED MATTER
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