P S Kop'Ev

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Publications in SciGraph latest 50 shown

  • 2014-05 Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures in SEMICONDUCTORS
  • 2013-08 AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide in SEMICONDUCTORS
  • 2013-06 A scanning pulse-periodic laser based on heterostructures containing ZnSe with electron beam pumping in OPTICS AND SPECTROSCOPY
  • 2010-01 Plasmonic amplification of single exciton transitions in InGaN in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2009-09 Pulsed heating of active elements of low-threshold electron-beam-pumped green lasers based on nanostructures of II–VI compounds in OPTICS AND SPECTROSCOPY
  • 2003-06 Electron paramagnetic resonance in neutron-transmutation-doped semiconductors with a changed isotopic composition in PHYSICS OF THE SOLID STATE
  • 2002-11 ZnMnSe/ZnSSe Type-II semimagnetic superlattices: Growth and magnetoluminescence properties in SEMICONDUCTORS
  • 2002-07 GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronics in SEMICONDUCTORS
  • 2002-06 Waveguide InGaAsP/InP photodetectors for low-power autocorrelation measurements at 1.55 µm in SEMICONDUCTORS
  • 2001-11 Improved degradation stability of blue-green II-VI light-emitting diodes with excluded nitrogen-doped ZnSe-based layers in SEMICONDUCTORS
  • 2001 Photoluminescence and atomic force microscopy studies of InAs/InSb nanostructures grown by MBE in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2000-04 Aleksandr Aleksandrovich Rogachev in SEMICONDUCTORS
  • 2000-01 A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate in SEMICONDUCTORS
  • 1999-12 Superradiance in semiconductors in SEMICONDUCTORS
  • 1999-08 Submillimeter photoconductivity of two-dimensional electron structures in Corbino geometry in SEMICONDUCTORS
  • 1999-08 Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures in SEMICONDUCTORS
  • 1999-04 Influence of heating of the active region in InGaAsP/InP injection lasers on their spectral characteristics in TECHNICAL PHYSICS LETTERS
  • 1999-02 Observation of a hybridization gap in cyclotron resonance spectra of semimetallic InAs/GaSb quantum wells in JETP LETTERS
  • 1998-11 On the nature of the oscillations of cyclotron absorption in InAs/GaSb quantum wells in JETP LETTERS
  • 1998-10 Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers in SEMICONDUCTORS
  • 1998-02 RT lasing via nanoscale CdSe islands in a (Zn,Mg)(S,Se) matrix in JOURNAL OF ELECTRONIC MATERIALS
  • 1997-10 Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy in SEMICONDUCTORS
  • 1997-04 Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement in TECHNICAL PHYSICS LETTERS
  • 1997-02 Optical properties of submonolayer CdSe-(Zn,Mg)(S,Se) structures in SEMICONDUCTORS
  • 1997-01 Photoluminescence of InSb quantum dots in GaAs and GaSb matrices in SEMICONDUCTORS
  • 1996 MBE Growth of (In,Ga)As Self-Assembled Quantum Dots for Optoeletronic Applications in DEVICES BASED ON LOW-DIMENSIONAL SEMICONDUCTOR STRUCTURES
  • 1988 Recombination Processes in GaAs/AlGaAs Multi-Quantum Well Structures in LASER OPTICS OF CONDENSED MATTER
  • Affiliations

  • Ioffe Institute (current)
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