A E Nikolaev


Ontology type: schema:Person     


Person Info

NAME

A E

SURNAME

Nikolaev

Publications in SciGraph latest 50 shown

  • 2016-09 Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs in SEMICONDUCTORS
  • 2016-04 The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy in TECHNICAL PHYSICS LETTERS
  • 2015-11 Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency in SEMICONDUCTORS
  • 2015-08 Capacitance-voltage characteristics of (Al/Ti)/Al2O3/n-GaN MIS structures in SEMICONDUCTORS
  • 2014-05 Properties of InGaN/GaN heterostructures obtained using growth interruption under various conditions in TECHNICAL PHYSICS LETTERS
  • 2014-01 Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers in SEMICONDUCTORS
  • 2012-10 Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region in SEMICONDUCTORS
  • 2012-05 Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates in TECHNICAL PHYSICS LETTERS
  • 2012-05 Monolithic white LEDs: Approaches, technology, design in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2012-03 Double-cross epitaxial overgrowth of nonpolar gallium nitride layers in TECHNICAL PHYSICS LETTERS
  • 2012-02 Emission of terahertz radiation from selectively doped AlGaN/GaN heterostructures under the heating of two-dimensional electrons by an electric field in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2011-02 Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them in SEMICONDUCTORS
  • 2010-12 Study of tunneling transport of carriers in structures with an InGaN/GaN active region in SEMICONDUCTORS
  • 2010-12 High growth rate of AlN in a planetary MOVPE reactor in TECHNICAL PHYSICS LETTERS
  • 2010-07 The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes in SEMICONDUCTORS
  • 2010-06 A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices in SEMICONDUCTORS
  • 2010-01 Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes in SEMICONDUCTORS
  • 2010-01 Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes in SEMICONDUCTORS
  • 2009-07 Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers in SEMICONDUCTORS
  • 2009-06 Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs in SEMICONDUCTORS
  • 2008-11 InGaAlN heterostructures for LEDs grown on patterned sapphire substrates in TECHNICAL PHYSICS LETTERS
  • 2005-12 Electrical properties of n-GaN/p-SiC heterojunctions in SEMICONDUCTORS
  • 2001-05 Mechanism of the current flow in Pd-(heavily doped p-AlxGa1−xN) ohmic contact in SEMICONDUCTORS
  • 1999-10 Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy in SEMICONDUCTORS
  • 1998-04 GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers in JOURNAL OF ELECTRONIC MATERIALS
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