Natalya D Il'Inskaya

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Natalya D



Publications in SciGraph latest 50 shown

  • 2021-02-19 High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination in SEMICONDUCTORS
  • 2021-02 Plasmachemical and Wet Etching in the Postgrowth Technology of Solar Cells Based on the GaInP/GaInAs/Ge Heterostructure in TECHNICAL PHYSICS LETTERS
  • 2020-06 Formation of SiC Mesastructures with Gently Sloping Sidewalls by Dry Selective Etching through a Photoresist Mask in TECHNICAL PHYSICS
  • 2020-02 Edge-Termination Technique for High-Voltage Mesa-Structure 4H-SiC Devices: Negative Beveling in SEMICONDUCTORS
  • 2020-01 Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode in SEMICONDUCTORS
  • 2019-12 Developing Methods for Wet Chemical Etching of a Separation Mesa Structure during Creation of Multijunction Solar Cells in TECHNICAL PHYSICS LETTERS
  • 2019-10-17 Features of Tunneling Current in Superlattices with Electrical Domains in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2019-06-10 Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO2 (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection in SEMICONDUCTORS
  • 2018-10-15 Lasing in 9.6-μm Quantum Cascade Lasers in TECHNICAL PHYSICS
  • 2018-09 Quantum-Cascade Lasers Generating at the 4.8-μm Wavelength at Room Temperature in TECHNICAL PHYSICS LETTERS
  • 2018-08-22 GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range in SEMICONDUCTORS
  • 2018-08-16 Influence of the Ohmic Contact Structure on the Performance of GaAs/AlGaAs Photovoltaic Converters in TECHNICAL PHYSICS
  • 2018-07-06 Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW in SEMICONDUCTORS
  • 2018-02 InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths in TECHNICAL PHYSICS
  • 2018-02 Mode-Locked Lasers with “Thin” Quantum Wells in 1.55 μm Spectral Range in TECHNICAL PHYSICS LETTERS
  • 2017-02-10 Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures in SEMICONDUCTORS
  • 2016-06-17 Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect in SEMICONDUCTORS
  • 2016-05-15 Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs heterostructure in SEMICONDUCTORS
  • 2016-01 Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices in JETP LETTERS
  • 2015-12-10 Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm in SEMICONDUCTORS
  • 2015-12-10 Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials in SEMICONDUCTORS
  • 2015-11 Cylindrical multilayer metal–dielectric structures in TECHNICAL PHYSICS LETTERS
  • 2015-10 Power increase in Q-switched two-sectional quantum well lasers due to Stark effect in TECHNICAL PHYSICS LETTERS
  • 2015-09-25 MBE-grown GaAs:Si/GaAs:Be tunnel diodes for multijunction solar cells in TECHNICAL PHYSICS LETTERS
  • 2015-08 Mode synchronization in a laser with coupled disk cavities in TECHNICAL PHYSICS LETTERS
  • 2015-07-01 Resistance of 4H-SiC Schottky barriers at high forward-current densities in SEMICONDUCTORS
  • 2015-03-04 Electrical properties of Pd-oxide-InP structures in SEMICONDUCTORS
  • 2014-12-02 High-power LEDs based on InGaAsP/InP heterostructures in SEMICONDUCTORS
  • 2014-10-28 Experimental Demonstration of Reduced Light Absorption by Intracavity Metallic Layers in Tamm Plasmon-based Microcavity in PLASMONICS
  • 2014-10-10 Fröhlich resonance in the AsSb/AlGaAs system in PHYSICS OF THE SOLID STATE
  • 2014-10-09 P-InAsSbP/n0-InAs/n+-InAs photodiodes for operation at moderate cooling (150–220 K) in SEMICONDUCTORS
  • 2014-10-09 Electroluminescence properties of a whispering-gallery-mode laser with coupled disk cavities in SEMICONDUCTORS
  • 2013-12-11 Photonic crystals and Bragg gratings for the mid-IR and terahertz spectral ranges in SEMICONDUCTORS
  • 2013-11-06 Manifestation of the Purcell effect in the conductivity of InAs/AlSb short-period superlattices in SEMICONDUCTORS
  • 2013-09-28 Preparation of a strip structure for quantum-cascade lasers in TECHNICAL PHYSICS LETTERS
  • 2013-09-28 Cooled photodiodes based on a type-II single p-InAsSbP/n-InAs heterostructure in TECHNICAL PHYSICS LETTERS
  • 2013-06-10 Temperature dependence of the threshold current in quantum-well WGM lasers (2.0–2.5 μm) in SEMICONDUCTORS
  • 2013-04-17 Growth specifics of GaAs nanowires in mesa in PHYSICS OF THE SOLID STATE
  • 2013-02 Increasing output power of LEDs (λ = 1.7–2.4 μm) by changing directions of reflected light fluxes in GaSb/GaInAsSb/GaAlAsSb heterostructures in TECHNICAL PHYSICS LETTERS
  • 2013-01-07 Effect of rapid thermal annealing on the current-voltage characteristics of 4H-SiC Schottky diodes in SEMICONDUCTORS
  • 2012-07 Characterization of quantum-confinement whispering-gallery-mode lasers operating above room temperature in TECHNICAL PHYSICS LETTERS
  • 2012-05-06 Front surface illuminated InAsSb photodiodes (long-wavelength cutoff λ0.1 = 4.5 μm) operating at temperatures of 25–80°C in SEMICONDUCTORS
  • 2012-05 Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes in TECHNICAL PHYSICS LETTERS
  • 2012-04 Mid-infrared radiation sources based on coupled disk cavities in TECHNICAL PHYSICS LETTERS
  • 2012-04 The effect of barrier width in coupled asymmetric double quantum well structure on passive mode-locking region of existence in TECHNICAL PHYSICS LETTERS
  • 2012-03-16 Leakage currents in 4H-SiC JBS diodes in SEMICONDUCTORS
  • 2012-03 Uncooled photodiodes based on InAsSb(P) with long-wavelength cut-off at λ = 5.8 μm in TECHNICAL PHYSICS LETTERS
  • 2012-02 Anisotropic polarization of radiation in quantum-confinement whispering-gallery-mode lasers in TECHNICAL PHYSICS LETTERS
  • 2012-01 Harmonic mode-locking in quantum dot lasers with tunnel-coupled waveguides in TECHNICAL PHYSICS LETTERS
  • 2011-11-11 Effect of temperature on the electroluminescent properties of mid-IR (λmax ≈ 4.4 μm) flip-chip LEDs based on an InAs/InAsSbP heterostructure in SEMICONDUCTORS
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