Graphene-containing device having graphene nanopatterns separated by narrow dead zone distance


Ontology type: sgo:Patent     


Patent Info

DATE

2018-03-27T00:00

AUTHORS

Seongjun JEONG , Seongjun Park , Yunseong LEE

ABSTRACT

Methods of forming a graphene nanopattern, graphene-containing devices, and methods of manufacturing the graphene-containing devices are provided. A method of forming the graphene nanopattern may include forming a graphene layer on a substrate, forming a block copolymer layer on the graphene layer and a region of the substrate exposed on at least one side of the graphene layer, forming a mask pattern from the block copolymer layer by removing one of a plurality of first region and a plurality of second regions of the block copolymer, and patterning the graphene layer in a nanoscale by using the mask pattern as an etching mask. The block copolymer layer may be formed to directly contact the graphene layer. The block copolymer layer may be formed to directly contact a region of the substrate structure that is exposed on at least one side of the graphene layer. More... »

Related SciGraph Publications

  • 2010-03. Graphene nanomesh in NATURE NANOTECHNOLOGY
  • JSON-LD is the canonical representation for SciGraph data.

    TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

    [
      {
        "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
        "about": [
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/2921", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "type": "DefinedTerm"
          }
        ], 
        "author": [
          {
            "name": "Seongjun JEONG", 
            "type": "Person"
          }, 
          {
            "name": "Seongjun Park", 
            "type": "Person"
          }, 
          {
            "name": "Yunseong LEE", 
            "type": "Person"
          }
        ], 
        "citation": [
          {
            "id": "sg:pub.10.1038/nnano.2010.8", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1005102686", 
              "https://doi.org/10.1038/nnano.2010.8"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1002/adma.201300813", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1036301206"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1021/nn301515a", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1056224384"
            ], 
            "type": "CreativeWork"
          }
        ], 
        "datePublished": "2018-03-27T00:00", 
        "description": "

    Methods of forming a graphene nanopattern, graphene-containing devices, and methods of manufacturing the graphene-containing devices are provided. A method of forming the graphene nanopattern may include forming a graphene layer on a substrate, forming a block copolymer layer on the graphene layer and a region of the substrate exposed on at least one side of the graphene layer, forming a mask pattern from the block copolymer layer by removing one of a plurality of first region and a plurality of second regions of the block copolymer, and patterning the graphene layer in a nanoscale by using the mask pattern as an etching mask. The block copolymer layer may be formed to directly contact the graphene layer. The block copolymer layer may be formed to directly contact a region of the substrate structure that is exposed on at least one side of the graphene layer.

    ", "id": "sg:patent.US-9929238-B2", "keywords": [ "nanopatterns", "dead zone", "method", "manufacturing", "graphene layer", "substrate", "copolymer", "pattern", "plurality", "second region", "patterning", "nanoscale", "etching", "substrate structure" ], "name": "Graphene-containing device having graphene nanopatterns separated by narrow dead zone distance", "recipient": [ { "id": "https://www.grid.ac/institutes/grid.419666.a", "type": "Organization" } ], "sameAs": [ "https://app.dimensions.ai/details/patent/US-9929238-B2" ], "sdDataset": "patents", "sdDatePublished": "2019-04-18T10:22", "sdLicense": "https://scigraph.springernature.com/explorer/license/", "sdPublisher": { "name": "Springer Nature - SN SciGraph project", "type": "Organization" }, "sdSource": "s3://com-uberresearch-data-patents-target-20190320-rc/data/sn-export/402f166718b70575fb5d4ffe01f064d1/0000100128-0000352499/json_export_01714.jsonl", "type": "Patent" } ]
     

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    This table displays all metadata directly associated to this object as RDF triples.

    54 TRIPLES      15 PREDICATES      31 URIs      22 LITERALS      2 BLANK NODES

    Subject Predicate Object
    1 sg:patent.US-9929238-B2 schema:about anzsrc-for:2921
    2 schema:author Neea91b853a334ea187ab55d31f0c53a4
    3 schema:citation sg:pub.10.1038/nnano.2010.8
    4 https://doi.org/10.1002/adma.201300813
    5 https://doi.org/10.1021/nn301515a
    6 schema:datePublished 2018-03-27T00:00
    7 schema:description <p id="p-0001" num="0000">Methods of forming a graphene nanopattern, graphene-containing devices, and methods of manufacturing the graphene-containing devices are provided. A method of forming the graphene nanopattern may include forming a graphene layer on a substrate, forming a block copolymer layer on the graphene layer and a region of the substrate exposed on at least one side of the graphene layer, forming a mask pattern from the block copolymer layer by removing one of a plurality of first region and a plurality of second regions of the block copolymer, and patterning the graphene layer in a nanoscale by using the mask pattern as an etching mask. The block copolymer layer may be formed to directly contact the graphene layer. The block copolymer layer may be formed to directly contact a region of the substrate structure that is exposed on at least one side of the graphene layer.</p>
    8 schema:keywords copolymer
    9 dead zone
    10 etching
    11 graphene layer
    12 manufacturing
    13 method
    14 nanopatterns
    15 nanoscale
    16 pattern
    17 patterning
    18 plurality
    19 second region
    20 substrate
    21 substrate structure
    22 schema:name Graphene-containing device having graphene nanopatterns separated by narrow dead zone distance
    23 schema:recipient https://www.grid.ac/institutes/grid.419666.a
    24 schema:sameAs https://app.dimensions.ai/details/patent/US-9929238-B2
    25 schema:sdDatePublished 2019-04-18T10:22
    26 schema:sdLicense https://scigraph.springernature.com/explorer/license/
    27 schema:sdPublisher N63bd793f8ca448a1933996f2729db1b5
    28 sgo:license sg:explorer/license/
    29 sgo:sdDataset patents
    30 rdf:type sgo:Patent
    31 N30cf8bb2ce8c445a80241c4262972c49 rdf:first N808358c989c543d790a4c38c29343c39
    32 rdf:rest rdf:nil
    33 N63bd793f8ca448a1933996f2729db1b5 schema:name Springer Nature - SN SciGraph project
    34 rdf:type schema:Organization
    35 N726862316f7243f2a2f7e7ecd417a804 schema:name Seongjun JEONG
    36 rdf:type schema:Person
    37 N808358c989c543d790a4c38c29343c39 schema:name Yunseong LEE
    38 rdf:type schema:Person
    39 N8eead0f55d764c8691d856ef07fa85e6 schema:name Seongjun Park
    40 rdf:type schema:Person
    41 Na6a94c2373d141098472f245ca0f4291 rdf:first N8eead0f55d764c8691d856ef07fa85e6
    42 rdf:rest N30cf8bb2ce8c445a80241c4262972c49
    43 Neea91b853a334ea187ab55d31f0c53a4 rdf:first N726862316f7243f2a2f7e7ecd417a804
    44 rdf:rest Na6a94c2373d141098472f245ca0f4291
    45 anzsrc-for:2921 schema:inDefinedTermSet anzsrc-for:
    46 rdf:type schema:DefinedTerm
    47 sg:pub.10.1038/nnano.2010.8 schema:sameAs https://app.dimensions.ai/details/publication/pub.1005102686
    48 https://doi.org/10.1038/nnano.2010.8
    49 rdf:type schema:CreativeWork
    50 https://doi.org/10.1002/adma.201300813 schema:sameAs https://app.dimensions.ai/details/publication/pub.1036301206
    51 rdf:type schema:CreativeWork
    52 https://doi.org/10.1021/nn301515a schema:sameAs https://app.dimensions.ai/details/publication/pub.1056224384
    53 rdf:type schema:CreativeWork
    54 https://www.grid.ac/institutes/grid.419666.a schema:Organization
     




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