CMOS device having carbon nanotubes


Ontology type: sgo:Patent     


Patent Info

DATE

N/A

AUTHORS

Qing Cao , Shu-Jen Han

ABSTRACT

A method, and the resulting structure, of making a CMOS device from carbon nanotube substrate, where a carbide contact is formed in a source drain region. The carbide is formed prior to the gate structure by reacting a glassy carbon and a metal.

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