Method of forming graphene nanopattern by using mask formed from block copolymer


Ontology type: sgo:Patent     


Patent Info

DATE

N/A

AUTHORS

Seongjun JEONG , Seongjun Park , Yunseong LEE

ABSTRACT

Methods of forming a graphene nanopattern, graphene-containing devices, and methods of manufacturing the graphene-containing devices are provided. A method of forming the graphene nanopattern may include forming a graphene layer on a substrate, forming a block copolymer layer on the graphene layer and a region of the substrate exposed on at least one side of the graphene layer, forming a mask pattern from the block copolymer layer by removing one of a plurality of first region and a plurality of second regions of the block copolymer, and patterning the graphene layer in a nanoscale by using the mask pattern as an etching mask. The block copolymer layer may be formed to directly contact the graphene layer. The block copolymer layer may be formed to directly contact a region of the substrate structure that is exposed on at least one side of the graphene layer. More... »

Related SciGraph Publications

  • 2010-03. Graphene nanomesh in NATURE NANOTECHNOLOGY
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