Electronic device having graphene-semiconductor multi-junction and method of manufacturing the electronic device


Ontology type: sgo:Patent     


Patent Info

DATE

N/A

AUTHORS

Hyeonjin SHIN , Sangwoo Kim , Kanghyuck LEE , Hyejung PARK , Eunbi CHO

ABSTRACT

Example embodiments relate to an electronic device having a graphene-semiconductor multi-junction and a method of manufacturing the electronic device. The electronic device includes a graphene layer having at least one graphene protrusion and a semiconductor layer that covers the graphene layer. A side surface of each of the at least one graphene protrusion may be uneven, may have a multi-edge, and may be a stepped side surface. The graphene layer includes a plurality of nanocrystal graphenes. The graphene layer includes a lower graphene layer having a plurality of nanocrystal graphenes and the at least one graphene protrusion that is formed on the lower graphene layer. The semiconductor layer may include a transition metal dichalcogenide (TMDC) layer. Each of the at least one graphene protrusion may include a plurality of nanocrystal graphenes. More... »

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