Resistive memory device and fabrication methods


Ontology type: sgo:Patent     


Patent Info

DATE

N/A

AUTHORS

Sung Hyun Jo , Kuk-Hwan Kim , Tanmay Kumar

ABSTRACT

A method for forming a resistive memory device includes providing a substrate comprising a first metal material, forming a conductive silicon-bearing layer on top of the first metal material, wherein the conductive silicon-bearing layer comprises an upper region and a lower region, and wherein the lower region is adjacent to the first metal material, forming an amorphous layer from the upper region of the conductive silicon-bearing layer, and disposing an active metal material above the amorphous layer. More... »

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