Electronic device including laterally arranged P-type and N-type regions in a two dimensional (2D) material layer and method of manufacturing ...


Ontology type: sgo:Patent     


Patent Info

DATE

2017-05-09T00:00

AUTHORS

Minsup CHOI , Wonjong YOO , Deshun QU , Changho RA , Xiaochi LIU , Seunghwan Lee , Jia Lee

ABSTRACT

According to example embodiments, an electronic device includes a substrate, an insulating layer on the substrate, and a diode layer on the insulating layer. The diode layer includes a two dimensional (2D) material layer. The 2D material layer includes an N-type region and a P-type region. According to example embodiments, a method of manufacturing an electronic device includes forming an insulating film on a substrate, forming a 2D material layer on the insulating film, and dividing the 2D material layer into an N-type region and a P-type region. More... »

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