Sub-oxide interface layer for two-terminal memory


Ontology type: sgo:Patent     


Patent Info

DATE

N/A

AUTHORS

Harry Yue Gee , Mark Harold CLARK , Steven Patrick MAXWELL , Sung Hyun Jo , Natividad VASQUEZ, JR.

ABSTRACT

Provision of fabrication, construction, and/or assembly of a two-terminal memory device is described herein. The two-terminal memory device can include an active region with a silicon bearing layer, an interface layer, and an active metal layer. The interface layer can created comprising a non-stoichiometric sub-oxide that can be a combination of multiple silicon and/or silicon oxide layers with an aggregate chemical formula of SiOX, where X can be a non-integer greater than zero and less than 2. The sub-oxide can be created in a variety of ways, including various techniques related to growing the sub-oxide, depositing the sub-oxide, or transforming an extant film into the sub-oxide. More... »

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