Strain engineered bandgaps


Ontology type: sgo:Patent     


Patent Info

DATE

N/A

AUTHORS

JU LI , Xiaofeng Qian , Ji Feng

ABSTRACT

An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, the optoelectronic device includes a first optoelectronic material that is inhomogeneously strained. A first charge carrier collector and a second charge carrier collector are each in electrical communication with the first optoelectronic material and are adapted to collect charge carriers from the first optoelectronic material. In another embodiment, a method of photocatalyzing a reaction includes using a strained optoelectronic material. More... »

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