Device switching using layered device structure


Ontology type: sgo:Patent     


Patent Info

DATE

2017-03-07T00:00

AUTHORS

Sung Hyun Jo , Wei Lu

ABSTRACT

A resistive switching device. The device includes a first electrode comprising a first metal material overlying the first dielectric material and a switching material comprising an amorphous silicon material. The device includes a second electrode comprising at least a second metal material. In a specific embodiment, the device includes a buffer material disposed between the first electrode and the switching material. The buffer material provides a blocking region between the switching material and the first electrode so that the blocking region is substantially free from metal particles from the second metal material when a first voltage is applied to the second electrode. More... »

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