Engineered band gaps


Ontology type: sgo:Patent     


Patent Info

DATE

N/A

AUTHORS

JU LI , Xiaofeng Qian , Menghao Wu

ABSTRACT

An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, an optoelectronic device includes first and second semiconducting atomically thin layers with corresponding first and second lattice directions. The first and second semiconducting atomically thin layers are located proximate to each other, and an angular difference between the first lattice direction and the second lattice direction is between about 0.000001° and 0.5°, or about 0.000001° and 0.5° deviant from of a Vicnal angle of the first and second semiconducting atomically thin layers. Alternatively, or in addition to the above, the first and second semiconducting atomically thin layers may form a Moiré superlattice of exciton funnels with a period between about 50 nm to 3 cm. The optoelectronic device may also include charge carrier conductors in electrical communication with the semiconducting atomically thin layers to either inject or extract charge carriers. More... »

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/2921", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "name": "JU LI", 
        "type": "Person"
      }, 
      {
        "name": "Xiaofeng Qian", 
        "type": "Person"
      }, 
      {
        "name": "Menghao Wu", 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1038/nnano.2012.256", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1005561651", 
          "https://doi.org/10.1038/nnano.2012.256"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1039/c2nr31405c", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1005680724"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0927-0256(96)00008-0", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1008708156"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1557/mrs.2014.3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1009544696"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1126/science.1237240", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1011524156"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nchem.1651", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1017454378", 
          "https://doi.org/10.1038/nchem.1651"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nature04414", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1017602302", 
          "https://doi.org/10.1038/nature04414"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nphys2272", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1021097156", 
          "https://doi.org/10.1038/nphys2272"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/jz500409m", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1023050278"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nphoton.2012.285", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1025099243", 
          "https://doi.org/10.1038/nphoton.2012.285"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nature12187", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1026408867", 
          "https://doi.org/10.1038/nature12187"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nnano.2014.35", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1032956475", 
          "https://doi.org/10.1038/nnano.2014.35"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nmat2711", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1034820877", 
          "https://doi.org/10.1038/nmat2711"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nphoton.2013.67", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1037170548", 
          "https://doi.org/10.1038/nphoton.2013.67"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nature12186", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1039071679", 
          "https://doi.org/10.1038/nature12186"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/jcc.20495", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1044734228"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/adma.201305058", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050274808"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/jp2095032", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056086170"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl502414t", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056220935"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1564060", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057720612"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1736034", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057802052"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrev.84.1232", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060458396"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.50.17953", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060573414"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.54.11169", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060581262"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.109.196802", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060760561"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.55.1418", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060792060"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/revmodphys.74.601", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060839553"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "description": "

An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, an optoelectronic device includes first and second semiconducting atomically thin layers with corresponding first and second lattice directions. The first and second semiconducting atomically thin layers are located proximate to each other, and an angular difference between the first lattice direction and the second lattice direction is between about 0.000001° and 0.5°, or about 0.000001° and 0.5° deviant from of a Vicnal angle of the first and second semiconducting atomically thin layers. Alternatively, or in addition to the above, the first and second semiconducting atomically thin layers may form a Moiré superlattice of exciton funnels with a period between about 50 nm to 3 cm. The optoelectronic device may also include charge carrier conductors in electrical communication with the semiconducting atomically thin layers to either inject or extract charge carriers.

", "id": "sg:patent.US-9484489-B2", "keywords": [ "band gap", "optoelectronic device", "method", "embodiment", "semiconducting", "thin layer", "lattice", "proximate", "difference", "deviant", "angle", "superlattices", "excitons", "period", "nm", "cm", "charge carrier", "electrical communication" ], "name": "Engineered band gaps", "recipient": [ { "id": "https://www.grid.ac/institutes/grid.116068.8", "type": "Organization" } ], "sameAs": [ "https://app.dimensions.ai/details/patent/US-9484489-B2" ], "sdDataset": "patents", "sdDatePublished": "2019-03-07T15:36", "sdLicense": "https://scigraph.springernature.com/explorer/license/", "sdPublisher": { "name": "Springer Nature - SN SciGraph project", "type": "Organization" }, "sdSource": "s3://com.uberresearch.data.dev.patents-pipeline/full_run_10/sn-export/5eb3e5a348d7f117b22cc85fb0b02730/0000100128-0000348334/json_export_c65b015e.jsonl", "type": "Patent" } ]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/patent.US-9484489-B2'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/patent.US-9484489-B2'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/patent.US-9484489-B2'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/patent.US-9484489-B2'


 

This table displays all metadata directly associated to this object as RDF triples.

138 TRIPLES      14 PREDICATES      58 URIs      25 LITERALS      2 BLANK NODES

Subject Predicate Object
1 sg:patent.US-9484489-B2 schema:about anzsrc-for:2921
2 schema:author N57562185aced4811964202f3005f908d
3 schema:citation sg:pub.10.1038/nature04414
4 sg:pub.10.1038/nature12186
5 sg:pub.10.1038/nature12187
6 sg:pub.10.1038/nchem.1651
7 sg:pub.10.1038/nmat2711
8 sg:pub.10.1038/nnano.2012.256
9 sg:pub.10.1038/nnano.2014.35
10 sg:pub.10.1038/nphoton.2012.285
11 sg:pub.10.1038/nphoton.2013.67
12 sg:pub.10.1038/nphys2272
13 https://doi.org/10.1002/adma.201305058
14 https://doi.org/10.1002/jcc.20495
15 https://doi.org/10.1016/0927-0256(96)00008-0
16 https://doi.org/10.1021/jp2095032
17 https://doi.org/10.1021/jz500409m
18 https://doi.org/10.1021/nl502414t
19 https://doi.org/10.1039/c2nr31405c
20 https://doi.org/10.1063/1.1564060
21 https://doi.org/10.1063/1.1736034
22 https://doi.org/10.1103/physrev.84.1232
23 https://doi.org/10.1103/physrevb.50.17953
24 https://doi.org/10.1103/physrevb.54.11169
25 https://doi.org/10.1103/physrevlett.109.196802
26 https://doi.org/10.1103/physrevlett.55.1418
27 https://doi.org/10.1103/revmodphys.74.601
28 https://doi.org/10.1126/science.1237240
29 https://doi.org/10.1557/mrs.2014.3
30 schema:description <p id="p-0001" num="0000">An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, an optoelectronic device includes first and second semiconducting atomically thin layers with corresponding first and second lattice directions. The first and second semiconducting atomically thin layers are located proximate to each other, and an angular difference between the first lattice direction and the second lattice direction is between about 0.000001&#176; and 0.5&#176;, or about 0.000001&#176; and 0.5&#176; deviant from of a Vicnal angle of the first and second semiconducting atomically thin layers. Alternatively, or in addition to the above, the first and second semiconducting atomically thin layers may form a Moir&#233; superlattice of exciton funnels with a period between about 50 nm to 3 cm. The optoelectronic device may also include charge carrier conductors in electrical communication with the semiconducting atomically thin layers to either inject or extract charge carriers.</p>
31 schema:keywords angle
32 band gap
33 charge carrier
34 cm
35 deviant
36 difference
37 electrical communication
38 embodiment
39 excitons
40 lattice
41 method
42 nm
43 optoelectronic device
44 period
45 proximate
46 semiconducting
47 superlattices
48 thin layer
49 schema:name Engineered band gaps
50 schema:recipient https://www.grid.ac/institutes/grid.116068.8
51 schema:sameAs https://app.dimensions.ai/details/patent/US-9484489-B2
52 schema:sdDatePublished 2019-03-07T15:36
53 schema:sdLicense https://scigraph.springernature.com/explorer/license/
54 schema:sdPublisher N3cf4c34ce7994b219a1abd1f7f68fd98
55 sgo:license sg:explorer/license/
56 sgo:sdDataset patents
57 rdf:type sgo:Patent
58 N0511a7b6f263421783f8e7c3e5ddb3e1 rdf:first N34a342cfdcdd4d9aab380ea73b807284
59 rdf:rest Na74bee094fe843f5a4fa7d1305d1bd20
60 N34a342cfdcdd4d9aab380ea73b807284 schema:name Xiaofeng Qian
61 rdf:type schema:Person
62 N3cf4c34ce7994b219a1abd1f7f68fd98 schema:name Springer Nature - SN SciGraph project
63 rdf:type schema:Organization
64 N57562185aced4811964202f3005f908d rdf:first Nb415fe495136447f9d1e43cfdf5ac5b9
65 rdf:rest N0511a7b6f263421783f8e7c3e5ddb3e1
66 Na74bee094fe843f5a4fa7d1305d1bd20 rdf:first Nb22e8ff33fe74250b4e8c1626d84d528
67 rdf:rest rdf:nil
68 Nb22e8ff33fe74250b4e8c1626d84d528 schema:name Menghao Wu
69 rdf:type schema:Person
70 Nb415fe495136447f9d1e43cfdf5ac5b9 schema:name JU LI
71 rdf:type schema:Person
72 anzsrc-for:2921 schema:inDefinedTermSet anzsrc-for:
73 rdf:type schema:DefinedTerm
74 sg:pub.10.1038/nature04414 schema:sameAs https://app.dimensions.ai/details/publication/pub.1017602302
75 https://doi.org/10.1038/nature04414
76 rdf:type schema:CreativeWork
77 sg:pub.10.1038/nature12186 schema:sameAs https://app.dimensions.ai/details/publication/pub.1039071679
78 https://doi.org/10.1038/nature12186
79 rdf:type schema:CreativeWork
80 sg:pub.10.1038/nature12187 schema:sameAs https://app.dimensions.ai/details/publication/pub.1026408867
81 https://doi.org/10.1038/nature12187
82 rdf:type schema:CreativeWork
83 sg:pub.10.1038/nchem.1651 schema:sameAs https://app.dimensions.ai/details/publication/pub.1017454378
84 https://doi.org/10.1038/nchem.1651
85 rdf:type schema:CreativeWork
86 sg:pub.10.1038/nmat2711 schema:sameAs https://app.dimensions.ai/details/publication/pub.1034820877
87 https://doi.org/10.1038/nmat2711
88 rdf:type schema:CreativeWork
89 sg:pub.10.1038/nnano.2012.256 schema:sameAs https://app.dimensions.ai/details/publication/pub.1005561651
90 https://doi.org/10.1038/nnano.2012.256
91 rdf:type schema:CreativeWork
92 sg:pub.10.1038/nnano.2014.35 schema:sameAs https://app.dimensions.ai/details/publication/pub.1032956475
93 https://doi.org/10.1038/nnano.2014.35
94 rdf:type schema:CreativeWork
95 sg:pub.10.1038/nphoton.2012.285 schema:sameAs https://app.dimensions.ai/details/publication/pub.1025099243
96 https://doi.org/10.1038/nphoton.2012.285
97 rdf:type schema:CreativeWork
98 sg:pub.10.1038/nphoton.2013.67 schema:sameAs https://app.dimensions.ai/details/publication/pub.1037170548
99 https://doi.org/10.1038/nphoton.2013.67
100 rdf:type schema:CreativeWork
101 sg:pub.10.1038/nphys2272 schema:sameAs https://app.dimensions.ai/details/publication/pub.1021097156
102 https://doi.org/10.1038/nphys2272
103 rdf:type schema:CreativeWork
104 https://doi.org/10.1002/adma.201305058 schema:sameAs https://app.dimensions.ai/details/publication/pub.1050274808
105 rdf:type schema:CreativeWork
106 https://doi.org/10.1002/jcc.20495 schema:sameAs https://app.dimensions.ai/details/publication/pub.1044734228
107 rdf:type schema:CreativeWork
108 https://doi.org/10.1016/0927-0256(96)00008-0 schema:sameAs https://app.dimensions.ai/details/publication/pub.1008708156
109 rdf:type schema:CreativeWork
110 https://doi.org/10.1021/jp2095032 schema:sameAs https://app.dimensions.ai/details/publication/pub.1056086170
111 rdf:type schema:CreativeWork
112 https://doi.org/10.1021/jz500409m schema:sameAs https://app.dimensions.ai/details/publication/pub.1023050278
113 rdf:type schema:CreativeWork
114 https://doi.org/10.1021/nl502414t schema:sameAs https://app.dimensions.ai/details/publication/pub.1056220935
115 rdf:type schema:CreativeWork
116 https://doi.org/10.1039/c2nr31405c schema:sameAs https://app.dimensions.ai/details/publication/pub.1005680724
117 rdf:type schema:CreativeWork
118 https://doi.org/10.1063/1.1564060 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057720612
119 rdf:type schema:CreativeWork
120 https://doi.org/10.1063/1.1736034 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057802052
121 rdf:type schema:CreativeWork
122 https://doi.org/10.1103/physrev.84.1232 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060458396
123 rdf:type schema:CreativeWork
124 https://doi.org/10.1103/physrevb.50.17953 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060573414
125 rdf:type schema:CreativeWork
126 https://doi.org/10.1103/physrevb.54.11169 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060581262
127 rdf:type schema:CreativeWork
128 https://doi.org/10.1103/physrevlett.109.196802 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060760561
129 rdf:type schema:CreativeWork
130 https://doi.org/10.1103/physrevlett.55.1418 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060792060
131 rdf:type schema:CreativeWork
132 https://doi.org/10.1103/revmodphys.74.601 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060839553
133 rdf:type schema:CreativeWork
134 https://doi.org/10.1126/science.1237240 schema:sameAs https://app.dimensions.ai/details/publication/pub.1011524156
135 rdf:type schema:CreativeWork
136 https://doi.org/10.1557/mrs.2014.3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1009544696
137 rdf:type schema:CreativeWork
138 https://www.grid.ac/institutes/grid.116068.8 schema:Organization
 




Preview window. Press ESC to close (or click here)


...