Resistive random access memory with non-linear current-voltage relationship


Ontology type: sgo:Patent     


Patent Info

DATE

N/A

AUTHORS

Sung Hyun Jo , Kuk-Hwan Kim

ABSTRACT

Providing for fabrication, construction, and/or assembly of a resistive random access memory (RRAM) cell is described herein. The RRAM cell can exhibit a non-linear current-voltage relationship. When arranged in a memory array architecture, these cells can significantly mitigate sneak path issues associated with conventional RRAM arrays.

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