Magnetic tunnel junction (MTJ) with a magnesium oxide tunnel barrier


Ontology type: sgo:Patent     


Patent Info

DATE

N/A

AUTHORS

MingLang Yan , Xiaobo Huang , Jian X. Shen

ABSTRACT

A method for fabricating a magnetic tunnel junction (MTJ) is disclosed. The process involves annealing a stack that includes a tunnel barrier layer and cooling the stack under vacuum immediately after annealing. At least one overlayer is deposited on the tunnel barrier layer to form the MTJ.

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