Nanogap device with capped nanowire structures


Ontology type: sgo:Patent     


Patent Info

DATE

N/A

AUTHORS

Yann A. N. Astier , Jingwei Bai , Satyavolu S. Papa Rao , Kathleen B. Reuter , Joshua T. Smith

ABSTRACT

An anti-retraction capping material is formed on a surface of a nanowire that is located upon a dielectric membrane. A gap is then formed into the anti-retraction capping material and nanowire forming first and second capped nanowire structures of a nanodevice. The nanodevice can be used for recognition tunneling measurements including, for example DNA sequencing. The anti-retraction capping material serves as a mobility barrier to pin, i.e., confine, a nanowire portion of each of the first and second capped nanowire structures in place, allowing long-term structural stability. In some embodiments, interelectrode leakage through solution during recognition tunneling measurements can be minimized. More... »

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