Thin film transistor steering element for a non-volatile memory device


Ontology type: sgo:Patent     


Patent Info

DATE

N/A

AUTHORS

Scott Brad Herner

ABSTRACT

A non-volatile memory device structure comprises a substrate having a surface region and a first dielectric material overlying the surface region. The device structure includes a state change device overlying the first dielectric material, the state change device comprising a first wiring structure configured to spatially extend in a first direction, a switching element comprising a first amorphous silicon material overlying the first wiring structure, and a second wiring structure configured to spatially extend in a second direction perpendicular to the first direction. The device structure includes a first thin film transistor device configured to cause the state change device to change from a first state to a second state. The thin film transistor device comprises a first active region, a second active region, a gate structure overlying a gate dielectric layer, and a channel region. The first active region is in electrical contact with the second wiring structure. More... »

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