Methods for n-type doping of graphene, and n-type-doped graphene compositions


Ontology type: sgo:Patent     


Patent Info

DATE

N/A

AUTHORS

Steven S. Bui , Jeong-Sun Moon

ABSTRACT

The present invention provides practical methods for n-type doping of graphene, either during graphene synthesis or following the formation of graphene. Some variations provide a method of n-type doping of graphene, comprising introducing a phosphorus-containing dopant fluid to a surface of graphene, under effective conditions to dope the graphene with phosphorus atoms or with phosphorus-containing molecules or fragments. It has been found that substitutional doping with phosphine can effectively modulate the electrical properties of graphene, such as graphene supported on Si or SiC substrates. Graphene sheet resistances well below 200 ohm/sq, and sheet carrier concentrations above 5×1013 cm−2, have been observed experimentally for n-doped graphene produced by the disclosed methods. This invention provides n-doped graphene for various electronic-device applications. More... »

Related SciGraph Publications

  • 2008-08. Contact and edge effects in graphene devices in NATURE NANOTECHNOLOGY
  • JSON-LD is the canonical representation for SciGraph data.

    TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

    [
      {
        "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
        "about": [
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/2480", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "type": "DefinedTerm"
          }
        ], 
        "author": [
          {
            "name": "Steven S. Bui", 
            "type": "Person"
          }, 
          {
            "name": "Jeong-Sun Moon", 
            "type": "Person"
          }
        ], 
        "citation": [
          {
            "id": "sg:pub.10.1038/nnano.2008.172", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1006813127", 
              "https://doi.org/10.1038/nnano.2008.172"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1166/jctn.2008.1123", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1007661169"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1149/1.3119537", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1019536610"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1021/nl902623y", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1036136012"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1073/pnas.0704772104", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1041096485"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1126/science.1170335", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1047077248"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1142/s1793292009001538", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1063020939"
            ], 
            "type": "CreativeWork"
          }
        ], 
        "description": "

    The present invention provides practical methods for n-type doping of graphene, either during graphene synthesis or following the formation of graphene. Some variations provide a method of n-type doping of graphene, comprising introducing a phosphorus-containing dopant fluid to a surface of graphene, under effective conditions to dope the graphene with phosphorus atoms or with phosphorus-containing molecules or fragments. It has been found that substitutional doping with phosphine can effectively modulate the electrical properties of graphene, such as graphene supported on Si or SiC substrates. Graphene sheet resistances well below 200 ohm/sq, and sheet carrier concentrations above 5×1013 cm−2, have been observed experimentally for n-doped graphene produced by the disclosed methods. This invention provides n-doped graphene for various electronic-device applications.

    ", "id": "sg:patent.US-8940576-B1", "keywords": [ "method", "n-type", "Graphite", "invention", "practical method", "synthesis", "variation", "dopants", "surface", "condition", "dope", "phosphorus atom", "molecule", "fragment", "phosphine", "electrical property", "SiC", "substrate", "graphene sheet", "carrier concentration", "cm", "NS", "device application" ], "name": "Methods for n-type doping of graphene, and n-type-doped graphene compositions", "recipient": [ { "id": "https://www.grid.ac/institutes/grid.435086.c", "type": "Organization" } ], "sameAs": [ "https://app.dimensions.ai/details/patent/US-8940576-B1" ], "sdDataset": "patents", "sdDatePublished": "2019-03-07T15:33", "sdLicense": "https://scigraph.springernature.com/explorer/license/", "sdPublisher": { "name": "Springer Nature - SN SciGraph project", "type": "Organization" }, "sdSource": "s3://com.uberresearch.data.dev.patents-pipeline/full_run_10/sn-export/5eb3e5a348d7f117b22cc85fb0b02730/0000100128-0000348334/json_export_820f844a.jsonl", "type": "Patent" } ]
     

    Download the RDF metadata as:  json-ld nt turtle xml License info

    HOW TO GET THIS DATA PROGRAMMATICALLY:

    JSON-LD is a popular format for linked data which is fully compatible with JSON.

    curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/patent.US-8940576-B1'

    N-Triples is a line-based linked data format ideal for batch operations.

    curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/patent.US-8940576-B1'

    Turtle is a human-readable linked data format.

    curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/patent.US-8940576-B1'

    RDF/XML is a standard XML format for linked data.

    curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/patent.US-8940576-B1'


     

    This table displays all metadata directly associated to this object as RDF triples.

    70 TRIPLES      14 PREDICATES      43 URIs      30 LITERALS      2 BLANK NODES

    Subject Predicate Object
    1 sg:patent.US-8940576-B1 schema:about anzsrc-for:2480
    2 schema:author N8f9aa0b98c7b41d1bb274076e87ee6c0
    3 schema:citation sg:pub.10.1038/nnano.2008.172
    4 https://doi.org/10.1021/nl902623y
    5 https://doi.org/10.1073/pnas.0704772104
    6 https://doi.org/10.1126/science.1170335
    7 https://doi.org/10.1142/s1793292009001538
    8 https://doi.org/10.1149/1.3119537
    9 https://doi.org/10.1166/jctn.2008.1123
    10 schema:description <p num="p-0001">The present invention provides practical methods for n-type doping of graphene, either during graphene synthesis or following the formation of graphene. Some variations provide a method of n-type doping of graphene, comprising introducing a phosphorus-containing dopant fluid to a surface of graphene, under effective conditions to dope the graphene with phosphorus atoms or with phosphorus-containing molecules or fragments. It has been found that substitutional doping with phosphine can effectively modulate the electrical properties of graphene, such as graphene supported on Si or SiC substrates. Graphene sheet resistances well below 200 ohm/sq, and sheet carrier concentrations above 5&#215;10<sup>13 </sup>cm<sup>&#8722;2</sup>, have been observed experimentally for n-doped graphene produced by the disclosed methods. This invention provides n-doped graphene for various electronic-device applications.</p>
    11 schema:keywords Graphite
    12 NS
    13 SiC
    14 carrier concentration
    15 cm
    16 condition
    17 device application
    18 dopants
    19 dope
    20 electrical property
    21 fragment
    22 graphene sheet
    23 invention
    24 method
    25 molecule
    26 n-type
    27 phosphine
    28 phosphorus atom
    29 practical method
    30 substrate
    31 surface
    32 synthesis
    33 variation
    34 schema:name Methods for n-type doping of graphene, and n-type-doped graphene compositions
    35 schema:recipient https://www.grid.ac/institutes/grid.435086.c
    36 schema:sameAs https://app.dimensions.ai/details/patent/US-8940576-B1
    37 schema:sdDatePublished 2019-03-07T15:33
    38 schema:sdLicense https://scigraph.springernature.com/explorer/license/
    39 schema:sdPublisher Na5d5920df63a4e1a9d30b49006637bd5
    40 sgo:license sg:explorer/license/
    41 sgo:sdDataset patents
    42 rdf:type sgo:Patent
    43 N630dd0980817481eaca8797159708a8d rdf:first Nd0f4c8fef18c481e9c239ab4c2b1c1d4
    44 rdf:rest rdf:nil
    45 N8f9aa0b98c7b41d1bb274076e87ee6c0 rdf:first Necd912b81fa441c18a41b4c9501ffae5
    46 rdf:rest N630dd0980817481eaca8797159708a8d
    47 Na5d5920df63a4e1a9d30b49006637bd5 schema:name Springer Nature - SN SciGraph project
    48 rdf:type schema:Organization
    49 Nd0f4c8fef18c481e9c239ab4c2b1c1d4 schema:name Jeong-Sun Moon
    50 rdf:type schema:Person
    51 Necd912b81fa441c18a41b4c9501ffae5 schema:name Steven S. Bui
    52 rdf:type schema:Person
    53 anzsrc-for:2480 schema:inDefinedTermSet anzsrc-for:
    54 rdf:type schema:DefinedTerm
    55 sg:pub.10.1038/nnano.2008.172 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006813127
    56 https://doi.org/10.1038/nnano.2008.172
    57 rdf:type schema:CreativeWork
    58 https://doi.org/10.1021/nl902623y schema:sameAs https://app.dimensions.ai/details/publication/pub.1036136012
    59 rdf:type schema:CreativeWork
    60 https://doi.org/10.1073/pnas.0704772104 schema:sameAs https://app.dimensions.ai/details/publication/pub.1041096485
    61 rdf:type schema:CreativeWork
    62 https://doi.org/10.1126/science.1170335 schema:sameAs https://app.dimensions.ai/details/publication/pub.1047077248
    63 rdf:type schema:CreativeWork
    64 https://doi.org/10.1142/s1793292009001538 schema:sameAs https://app.dimensions.ai/details/publication/pub.1063020939
    65 rdf:type schema:CreativeWork
    66 https://doi.org/10.1149/1.3119537 schema:sameAs https://app.dimensions.ai/details/publication/pub.1019536610
    67 rdf:type schema:CreativeWork
    68 https://doi.org/10.1166/jctn.2008.1123 schema:sameAs https://app.dimensions.ai/details/publication/pub.1007661169
    69 rdf:type schema:CreativeWork
    70 https://www.grid.ac/institutes/grid.435086.c schema:Organization
     




    Preview window. Press ESC to close (or click here)


    ...