Semiconducting graphene structures, methods of forming such structures and semiconductor devices including such structures


Ontology type: sgo:Patent     


Patent Info

DATE

N/A

AUTHORS

Roy E. Meade , Sumeet C. Pandey

ABSTRACT

A semiconducting graphene structure may include a graphene material and a graphene-lattice matching material over at least a portion of the graphene material, wherein the graphene-lattice matching material has a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material. The semiconducting graphene structure may have an energy band gap of at least about 0.5 eV. A method of modifying an energy band gap of a graphene material may include forming a graphene-lattice matching material over at least a portion of a graphene material, the graphene-lattice matching material having a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material. More... »

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    [
      {
        "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
        "about": [
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/2921", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "type": "DefinedTerm"
          }
        ], 
        "author": [
          {
            "name": "Roy E. Meade", 
            "type": "Person"
          }, 
          {
            "name": "Sumeet C. Pandey", 
            "type": "Person"
          }
        ], 
        "citation": [
          {
            "id": "sg:pub.10.1038/nnano.2010.89", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1011423110", 
              "https://doi.org/10.1038/nnano.2010.89"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1038/nnano.2010.192", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1018124713", 
              "https://doi.org/10.1038/nnano.2010.192"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1021/jp3068848", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1029412521"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1038/nnano.2010.200", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1051742890", 
              "https://doi.org/10.1038/nnano.2010.200"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1063/1.3253121", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1057925121"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1109/led.2009.2028248", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1061354564"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "https://doi.org/10.1557/mrs.2012.231", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1067966623"
            ], 
            "type": "CreativeWork"
          }
        ], 
        "description": "

    A semiconducting graphene structure may include a graphene material and a graphene-lattice matching material over at least a portion of the graphene material, wherein the graphene-lattice matching material has a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material. The semiconducting graphene structure may have an energy band gap of at least about 0.5 eV. A method of modifying an energy band gap of a graphene material may include forming a graphene-lattice matching material over at least a portion of a graphene material, the graphene-lattice matching material having a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material.

    ", "id": "sg:patent.US-8901666-B1", "keywords": [ "semiconducting", "method", "semiconductor device", "lattice", "portion", "wherein", "lattice constant", "bond length", "band gap", "eV" ], "name": "Semiconducting graphene structures, methods of forming such structures and semiconductor devices including such structures", "recipient": [ { "id": "https://www.grid.ac/institutes/grid.434172.7", "type": "Organization" } ], "sameAs": [ "https://app.dimensions.ai/details/patent/US-8901666-B1" ], "sdDataset": "patents", "sdDatePublished": "2019-03-07T15:33", "sdLicense": "https://scigraph.springernature.com/explorer/license/", "sdPublisher": { "name": "Springer Nature - SN SciGraph project", "type": "Organization" }, "sdSource": "s3://com.uberresearch.data.dev.patents-pipeline/full_run_10/sn-export/5eb3e5a348d7f117b22cc85fb0b02730/0000100128-0000348334/json_export_2f12e043.jsonl", "type": "Patent" } ]
     

    Download the RDF metadata as:  json-ld nt turtle xml License info

    HOW TO GET THIS DATA PROGRAMMATICALLY:

    JSON-LD is a popular format for linked data which is fully compatible with JSON.

    curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/patent.US-8901666-B1'

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    curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/patent.US-8901666-B1'

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    This table displays all metadata directly associated to this object as RDF triples.

    59 TRIPLES      14 PREDICATES      30 URIs      17 LITERALS      2 BLANK NODES

    Subject Predicate Object
    1 sg:patent.US-8901666-B1 schema:about anzsrc-for:2921
    2 schema:author N6498be0c85c44ace9e67b52de5f10e25
    3 schema:citation sg:pub.10.1038/nnano.2010.192
    4 sg:pub.10.1038/nnano.2010.200
    5 sg:pub.10.1038/nnano.2010.89
    6 https://doi.org/10.1021/jp3068848
    7 https://doi.org/10.1063/1.3253121
    8 https://doi.org/10.1109/led.2009.2028248
    9 https://doi.org/10.1557/mrs.2012.231
    10 schema:description <p num="p-0001">A semiconducting graphene structure may include a graphene material and a graphene-lattice matching material over at least a portion of the graphene material, wherein the graphene-lattice matching material has a lattice constant within about &#177;5% of a multiple of the lattice constant or bond length of the graphene material. The semiconducting graphene structure may have an energy band gap of at least about 0.5 eV. A method of modifying an energy band gap of a graphene material may include forming a graphene-lattice matching material over at least a portion of a graphene material, the graphene-lattice matching material having a lattice constant within about &#177;5% of a multiple of the lattice constant or bond length of the graphene material.</p>
    11 schema:keywords band gap
    12 bond length
    13 eV
    14 lattice
    15 lattice constant
    16 method
    17 portion
    18 semiconducting
    19 semiconductor device
    20 wherein
    21 schema:name Semiconducting graphene structures, methods of forming such structures and semiconductor devices including such structures
    22 schema:recipient https://www.grid.ac/institutes/grid.434172.7
    23 schema:sameAs https://app.dimensions.ai/details/patent/US-8901666-B1
    24 schema:sdDatePublished 2019-03-07T15:33
    25 schema:sdLicense https://scigraph.springernature.com/explorer/license/
    26 schema:sdPublisher N360d7019eabe45e3a9f899c89a4ca87a
    27 sgo:license sg:explorer/license/
    28 sgo:sdDataset patents
    29 rdf:type sgo:Patent
    30 N0a5fe50798a949b6a06ec6d1430bea7d schema:name Roy E. Meade
    31 rdf:type schema:Person
    32 N0b1fbb83321944608f78c35f2dcf469b rdf:first N0e8586d62d204fa4a7e7f2637c6beccd
    33 rdf:rest rdf:nil
    34 N0e8586d62d204fa4a7e7f2637c6beccd schema:name Sumeet C. Pandey
    35 rdf:type schema:Person
    36 N360d7019eabe45e3a9f899c89a4ca87a schema:name Springer Nature - SN SciGraph project
    37 rdf:type schema:Organization
    38 N6498be0c85c44ace9e67b52de5f10e25 rdf:first N0a5fe50798a949b6a06ec6d1430bea7d
    39 rdf:rest N0b1fbb83321944608f78c35f2dcf469b
    40 anzsrc-for:2921 schema:inDefinedTermSet anzsrc-for:
    41 rdf:type schema:DefinedTerm
    42 sg:pub.10.1038/nnano.2010.192 schema:sameAs https://app.dimensions.ai/details/publication/pub.1018124713
    43 https://doi.org/10.1038/nnano.2010.192
    44 rdf:type schema:CreativeWork
    45 sg:pub.10.1038/nnano.2010.200 schema:sameAs https://app.dimensions.ai/details/publication/pub.1051742890
    46 https://doi.org/10.1038/nnano.2010.200
    47 rdf:type schema:CreativeWork
    48 sg:pub.10.1038/nnano.2010.89 schema:sameAs https://app.dimensions.ai/details/publication/pub.1011423110
    49 https://doi.org/10.1038/nnano.2010.89
    50 rdf:type schema:CreativeWork
    51 https://doi.org/10.1021/jp3068848 schema:sameAs https://app.dimensions.ai/details/publication/pub.1029412521
    52 rdf:type schema:CreativeWork
    53 https://doi.org/10.1063/1.3253121 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057925121
    54 rdf:type schema:CreativeWork
    55 https://doi.org/10.1109/led.2009.2028248 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061354564
    56 rdf:type schema:CreativeWork
    57 https://doi.org/10.1557/mrs.2012.231 schema:sameAs https://app.dimensions.ai/details/publication/pub.1067966623
    58 rdf:type schema:CreativeWork
    59 https://www.grid.ac/institutes/grid.434172.7 schema:Organization
     




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