Doped, passivated graphene nanomesh, method of making the doped, passivated graphene nanomesh, and semiconductor device including the doped, passivated graphene ...


Ontology type: sgo:Patent     


Patent Info

DATE

N/A

AUTHORS

Ahmed Abou-Kandil , Ahmed Maarouf , Glenn J. Martyna , Hisham Mohamed , Dennis M. Newns

ABSTRACT

A method of making a semiconductor device, includes providing a graphene sheet, creating a plurality of nanoholes in the graphene sheet to form a graphene nanomesh, the graphene nanomesh including a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes, passivating a dangling bond on the plurality of carbon atoms by bonding a passivating element to the plurality of carbon atoms, and doping the passivated graphene nanomesh by bonding a dopant to the passivating element. More... »

Related SciGraph Publications

  • 2008-05. Charged-impurity scattering in graphene in NATURE PHYSICS
  • 2010-03. Graphene nanomesh in NATURE NANOTECHNOLOGY
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