Low temperature p+ silicon junction material for a non-volatile memory device


Ontology type: sgo:Patent     


Patent Info

DATE

2013-05-28T00:00

AUTHORS

Mark Harold CLARK

ABSTRACT

A method for forming a non-volatile memory device includes forming a dielectric material overlying a semiconductor substrate, forming a first wiring structure overlying the first dielectric material, depositing an undoped amorphous silicon layer, depositing an aluminum layer over the amorphous silicon layer at a temperature of about 450 Degrees Celsius or lower, annealing the amorphous silicon and aluminum at a temperature of about 450 Degrees Celsius or lower to form a p+ polycrystalline layer, depositing a resistive switching material comprising an amorphous silicon material overlying the polycrystalline silicon material, forming a second wiring structure comprising a metal material overlying the resistive switching material. More... »

Related SciGraph Publications

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/2921", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "name": "Mark Harold CLARK", 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1088/0957-4484/14/4/311", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1000008791"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0040-6090(03)00117-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1000751229"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0040-6090(03)00117-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1000751229"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-3093(89)90394-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1001871718"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-3093(89)90394-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1001871718"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl803669s", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1004292239"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl803669s", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1004292239"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1080/00207219208925733", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1011066753"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0038-1101(99)00182-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1012626917"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nmat2023", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1016486670", 
          "https://doi.org/10.1038/nmat2023"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl8037689", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1017668025"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl8037689", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1017668025"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(81)90038-1", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1019815338"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(81)90038-1", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1019815338"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl073225h", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1021056823"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl073225h", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1021056823"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/21602", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1021708578", 
          "https://doi.org/10.1038/21602"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-3093(89)90346-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1026464105"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-3093(89)90346-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1026464105"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-3093(85)90912-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1026664535"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-3093(85)90912-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1026664535"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl904092h", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1036030317"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl904092h", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1036030317"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nmat2028", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1036680225", 
          "https://doi.org/10.1038/nmat2028"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-3093(83)90398-8", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1038730641"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-3093(83)90398-8", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1038730641"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1126/science.285.5426.391", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1039329548"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0957-4484/12/2/303", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1041714625"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nature03190", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1041881218", 
          "https://doi.org/10.1038/nature03190"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nature03190", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1041881218", 
          "https://doi.org/10.1038/nature03190"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1080/01418639108224451", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1046191748"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl073224p", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056217645"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl073224p", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056217645"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1049/ip-i-1.1982.0009", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056855000"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.102396", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057649973"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.99491", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058139581"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/16.861587", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061097083"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/tnano.2003.808508", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061711765"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.570478", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062180525"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1126/science.1095520", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062449454"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1126/science.272.5258.85", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062552676"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1143/jjap.24.1363", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1063040187"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1557/mrs2004.232", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1067968603"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1557/mrs2004.236", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1067968607"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2013-05-28T00:00", 
    "description": "

A method for forming a non-volatile memory device includes forming a dielectric material overlying a semiconductor substrate, forming a first wiring structure overlying the first dielectric material, depositing an undoped amorphous silicon layer, depositing an aluminum layer over the amorphous silicon layer at a temperature of about 450 Degrees Celsius or lower, annealing the amorphous silicon and aluminum at a temperature of about 450 Degrees Celsius or lower to form a p+ polycrystalline layer, depositing a resistive switching material comprising an amorphous silicon material overlying the polycrystalline silicon material, forming a second wiring structure comprising a metal material overlying the resistive switching material.

", "id": "sg:patent.US-8450710-B2", "keywords": [ "low temperature", "non-volatile memory", "method", "dielectric material", "semiconductor substrate", "wiring", "amorphous silicon", "aluminum", "temperature", "degree Celsius", "annealing", "polycrystalline", "switching", "metal" ], "name": "Low temperature p+ silicon junction material for a non-volatile memory device", "sameAs": [ "https://app.dimensions.ai/details/patent/US-8450710-B2" ], "sdDataset": "patents", "sdDatePublished": "2019-04-18T10:11", "sdLicense": "https://scigraph.springernature.com/explorer/license/", "sdPublisher": { "name": "Springer Nature - SN SciGraph project", "type": "Organization" }, "sdSource": "s3://com-uberresearch-data-patents-target-20190320-rc/data/sn-export/402f166718b70575fb5d4ffe01f064d1/0000100128-0000352499/json_export_00534.jsonl", "type": "Patent" } ]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/patent.US-8450710-B2'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/patent.US-8450710-B2'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/patent.US-8450710-B2'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/patent.US-8450710-B2'


 

This table displays all metadata directly associated to this object as RDF triples.

134 TRIPLES      14 PREDICATES      59 URIs      22 LITERALS      2 BLANK NODES

Subject Predicate Object
1 sg:patent.US-8450710-B2 schema:about anzsrc-for:2921
2 schema:author N71b4b0af2682434792f1d1c653a01fa5
3 schema:citation sg:pub.10.1038/21602
4 sg:pub.10.1038/nature03190
5 sg:pub.10.1038/nmat2023
6 sg:pub.10.1038/nmat2028
7 https://doi.org/10.1016/0022-3093(83)90398-8
8 https://doi.org/10.1016/0022-3093(85)90912-3
9 https://doi.org/10.1016/0022-3093(89)90346-3
10 https://doi.org/10.1016/0022-3093(89)90394-3
11 https://doi.org/10.1016/0038-1101(81)90038-1
12 https://doi.org/10.1016/s0038-1101(99)00182-3
13 https://doi.org/10.1016/s0040-6090(03)00117-2
14 https://doi.org/10.1021/nl073224p
15 https://doi.org/10.1021/nl073225h
16 https://doi.org/10.1021/nl803669s
17 https://doi.org/10.1021/nl8037689
18 https://doi.org/10.1021/nl904092h
19 https://doi.org/10.1049/ip-i-1.1982.0009
20 https://doi.org/10.1063/1.102396
21 https://doi.org/10.1063/1.99491
22 https://doi.org/10.1080/00207219208925733
23 https://doi.org/10.1080/01418639108224451
24 https://doi.org/10.1088/0957-4484/12/2/303
25 https://doi.org/10.1088/0957-4484/14/4/311
26 https://doi.org/10.1109/16.861587
27 https://doi.org/10.1109/tnano.2003.808508
28 https://doi.org/10.1116/1.570478
29 https://doi.org/10.1126/science.1095520
30 https://doi.org/10.1126/science.272.5258.85
31 https://doi.org/10.1126/science.285.5426.391
32 https://doi.org/10.1143/jjap.24.1363
33 https://doi.org/10.1557/mrs2004.232
34 https://doi.org/10.1557/mrs2004.236
35 schema:datePublished 2013-05-28T00:00
36 schema:description <p num="p-0001">A method for forming a non-volatile memory device includes forming a dielectric material overlying a semiconductor substrate, forming a first wiring structure overlying the first dielectric material, depositing an undoped amorphous silicon layer, depositing an aluminum layer over the amorphous silicon layer at a temperature of about 450 Degrees Celsius or lower, annealing the amorphous silicon and aluminum at a temperature of about 450 Degrees Celsius or lower to form a p+ polycrystalline layer, depositing a resistive switching material comprising an amorphous silicon material overlying the polycrystalline silicon material, forming a second wiring structure comprising a metal material overlying the resistive switching material.</p>
37 schema:keywords aluminum
38 amorphous silicon
39 annealing
40 degree Celsius
41 dielectric material
42 low temperature
43 metal
44 method
45 non-volatile memory
46 polycrystalline
47 semiconductor substrate
48 switching
49 temperature
50 wiring
51 schema:name Low temperature p+ silicon junction material for a non-volatile memory device
52 schema:sameAs https://app.dimensions.ai/details/patent/US-8450710-B2
53 schema:sdDatePublished 2019-04-18T10:11
54 schema:sdLicense https://scigraph.springernature.com/explorer/license/
55 schema:sdPublisher Nbf8f6a08314548dd9f57d0594cd55d39
56 sgo:license sg:explorer/license/
57 sgo:sdDataset patents
58 rdf:type sgo:Patent
59 N4be8a6cd6436435ca9ec5aa954482d1d schema:name Mark Harold CLARK
60 rdf:type schema:Person
61 N71b4b0af2682434792f1d1c653a01fa5 rdf:first N4be8a6cd6436435ca9ec5aa954482d1d
62 rdf:rest rdf:nil
63 Nbf8f6a08314548dd9f57d0594cd55d39 schema:name Springer Nature - SN SciGraph project
64 rdf:type schema:Organization
65 anzsrc-for:2921 schema:inDefinedTermSet anzsrc-for:
66 rdf:type schema:DefinedTerm
67 sg:pub.10.1038/21602 schema:sameAs https://app.dimensions.ai/details/publication/pub.1021708578
68 https://doi.org/10.1038/21602
69 rdf:type schema:CreativeWork
70 sg:pub.10.1038/nature03190 schema:sameAs https://app.dimensions.ai/details/publication/pub.1041881218
71 https://doi.org/10.1038/nature03190
72 rdf:type schema:CreativeWork
73 sg:pub.10.1038/nmat2023 schema:sameAs https://app.dimensions.ai/details/publication/pub.1016486670
74 https://doi.org/10.1038/nmat2023
75 rdf:type schema:CreativeWork
76 sg:pub.10.1038/nmat2028 schema:sameAs https://app.dimensions.ai/details/publication/pub.1036680225
77 https://doi.org/10.1038/nmat2028
78 rdf:type schema:CreativeWork
79 https://doi.org/10.1016/0022-3093(83)90398-8 schema:sameAs https://app.dimensions.ai/details/publication/pub.1038730641
80 rdf:type schema:CreativeWork
81 https://doi.org/10.1016/0022-3093(85)90912-3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1026664535
82 rdf:type schema:CreativeWork
83 https://doi.org/10.1016/0022-3093(89)90346-3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1026464105
84 rdf:type schema:CreativeWork
85 https://doi.org/10.1016/0022-3093(89)90394-3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1001871718
86 rdf:type schema:CreativeWork
87 https://doi.org/10.1016/0038-1101(81)90038-1 schema:sameAs https://app.dimensions.ai/details/publication/pub.1019815338
88 rdf:type schema:CreativeWork
89 https://doi.org/10.1016/s0038-1101(99)00182-3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1012626917
90 rdf:type schema:CreativeWork
91 https://doi.org/10.1016/s0040-6090(03)00117-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000751229
92 rdf:type schema:CreativeWork
93 https://doi.org/10.1021/nl073224p schema:sameAs https://app.dimensions.ai/details/publication/pub.1056217645
94 rdf:type schema:CreativeWork
95 https://doi.org/10.1021/nl073225h schema:sameAs https://app.dimensions.ai/details/publication/pub.1021056823
96 rdf:type schema:CreativeWork
97 https://doi.org/10.1021/nl803669s schema:sameAs https://app.dimensions.ai/details/publication/pub.1004292239
98 rdf:type schema:CreativeWork
99 https://doi.org/10.1021/nl8037689 schema:sameAs https://app.dimensions.ai/details/publication/pub.1017668025
100 rdf:type schema:CreativeWork
101 https://doi.org/10.1021/nl904092h schema:sameAs https://app.dimensions.ai/details/publication/pub.1036030317
102 rdf:type schema:CreativeWork
103 https://doi.org/10.1049/ip-i-1.1982.0009 schema:sameAs https://app.dimensions.ai/details/publication/pub.1056855000
104 rdf:type schema:CreativeWork
105 https://doi.org/10.1063/1.102396 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057649973
106 rdf:type schema:CreativeWork
107 https://doi.org/10.1063/1.99491 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058139581
108 rdf:type schema:CreativeWork
109 https://doi.org/10.1080/00207219208925733 schema:sameAs https://app.dimensions.ai/details/publication/pub.1011066753
110 rdf:type schema:CreativeWork
111 https://doi.org/10.1080/01418639108224451 schema:sameAs https://app.dimensions.ai/details/publication/pub.1046191748
112 rdf:type schema:CreativeWork
113 https://doi.org/10.1088/0957-4484/12/2/303 schema:sameAs https://app.dimensions.ai/details/publication/pub.1041714625
114 rdf:type schema:CreativeWork
115 https://doi.org/10.1088/0957-4484/14/4/311 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000008791
116 rdf:type schema:CreativeWork
117 https://doi.org/10.1109/16.861587 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061097083
118 rdf:type schema:CreativeWork
119 https://doi.org/10.1109/tnano.2003.808508 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061711765
120 rdf:type schema:CreativeWork
121 https://doi.org/10.1116/1.570478 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062180525
122 rdf:type schema:CreativeWork
123 https://doi.org/10.1126/science.1095520 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062449454
124 rdf:type schema:CreativeWork
125 https://doi.org/10.1126/science.272.5258.85 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062552676
126 rdf:type schema:CreativeWork
127 https://doi.org/10.1126/science.285.5426.391 schema:sameAs https://app.dimensions.ai/details/publication/pub.1039329548
128 rdf:type schema:CreativeWork
129 https://doi.org/10.1143/jjap.24.1363 schema:sameAs https://app.dimensions.ai/details/publication/pub.1063040187
130 rdf:type schema:CreativeWork
131 https://doi.org/10.1557/mrs2004.232 schema:sameAs https://app.dimensions.ai/details/publication/pub.1067968603
132 rdf:type schema:CreativeWork
133 https://doi.org/10.1557/mrs2004.236 schema:sameAs https://app.dimensions.ai/details/publication/pub.1067968607
134 rdf:type schema:CreativeWork
 




Preview window. Press ESC to close (or click here)


...