Magnetic memory devices


Ontology type: sgo:Patent     


Patent Info

DATE

N/A

AUTHORS

Ki Joon Kim

ABSTRACT

Provided is a magnetic memory device and a method of forming the same. A first magnetic conductive layer is disposed on a substrate. A first tunnel barrier layer including a first metallic element and a first non-metallic element is disposed on the first magnetic conductive layer. A second magnetic conductive layer is disposed on the first tunnel barrier layer. A content of an isotope of the first metallic element having a non-zero nuclear spin quantum number is lower than a natural state. More... »

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