Resistive memory using SiGe material


Ontology type: sgo:Patent     


Patent Info

DATE

N/A

AUTHORS

Wei Lu

ABSTRACT

A resistive memory device includes a first electrode; a second electrode having a polycrystalline semiconductor layer that includes silicon; a non-crystalline silicon structure provided between the first electrode and the second electrode. The first electrode, second electrode and non-crystalline silicon structure define a two-terminal resistive memory cell.

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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/2921", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "name": "Wei Lu", 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1088/0957-4484/14/4/311", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1000008791"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0040-6090(03)00117-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1000751229"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-3093(89)90394-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1001871718"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl803669s", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1004292239"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1080/00207219208925733", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1011066753"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1080/00207219208925733", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1011066753"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0038-1101(99)00182-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1012626917"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nmat2023", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1016486670", 
          "https://doi.org/10.1038/nmat2023"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl8037689", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1017668025"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(81)90038-1", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1019815338"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl073225h", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1021056823"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/21602", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1021708578", 
          "https://doi.org/10.1038/21602"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-3093(89)90346-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1026464105"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-3093(85)90912-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1026664535"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nmat2028", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1036680225", 
          "https://doi.org/10.1038/nmat2028"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-3093(83)90398-8", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1038730641"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1126/science.285.5426.391", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1039329548"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1088/0957-4484/12/2/303", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1041714625"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nature03190", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1041881218", 
          "https://doi.org/10.1038/nature03190"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1080/01418639108224451", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1046191748"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl073224p", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056217645"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1049/ip-i-1.1982.0009", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056855000"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.102396", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057649973"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.99491", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058139581"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/16.861587", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061097083"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/tnano.2003.808508", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061711765"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.570478", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062180525"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1126/science.1095520", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062449454"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1126/science.272.5258.85", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062552676"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1143/jjap.24.1363", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1063040187"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1557/mrs2004.232", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1067968603"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1557/mrs2004.236", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1067968607"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "description": "

A resistive memory device includes a first electrode; a second electrode having a polycrystalline semiconductor layer that includes silicon; a non-crystalline silicon structure provided between the first electrode and the second electrode. The first electrode, second electrode and non-crystalline silicon structure define a two-terminal resistive memory cell.

", "id": "sg:patent.US-8374018-B2", "keywords": [ "memory", "SiGe", "memory device", "electrode", "semiconductor layer", "silicon", "crystalline silicon", "memory cell" ], "name": "Resistive memory using SiGe material", "sameAs": [ "https://app.dimensions.ai/details/patent/US-8374018-B2" ], "sdDataset": "patents", "sdDatePublished": "2019-03-07T15:29", "sdLicense": "https://scigraph.springernature.com/explorer/license/", "sdPublisher": { "name": "Springer Nature - SN SciGraph project", "type": "Organization" }, "sdSource": "s3://com.uberresearch.data.dev.patents-pipeline/full_run_10/sn-export/5eb3e5a348d7f117b22cc85fb0b02730/0000100128-0000348334/json_export_03300925.jsonl", "type": "Patent" } ]
 

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This table displays all metadata directly associated to this object as RDF triples.

124 TRIPLES      13 PREDICATES      51 URIs      15 LITERALS      2 BLANK NODES

Subject Predicate Object
1 sg:patent.US-8374018-B2 schema:about anzsrc-for:2921
2 schema:author N6960a7e54b934d94a6286979a791775f
3 schema:citation sg:pub.10.1038/21602
4 sg:pub.10.1038/nature03190
5 sg:pub.10.1038/nmat2023
6 sg:pub.10.1038/nmat2028
7 https://doi.org/10.1016/0022-3093(83)90398-8
8 https://doi.org/10.1016/0022-3093(85)90912-3
9 https://doi.org/10.1016/0022-3093(89)90346-3
10 https://doi.org/10.1016/0022-3093(89)90394-3
11 https://doi.org/10.1016/0038-1101(81)90038-1
12 https://doi.org/10.1016/s0038-1101(99)00182-3
13 https://doi.org/10.1016/s0040-6090(03)00117-2
14 https://doi.org/10.1021/nl073224p
15 https://doi.org/10.1021/nl073225h
16 https://doi.org/10.1021/nl803669s
17 https://doi.org/10.1021/nl8037689
18 https://doi.org/10.1049/ip-i-1.1982.0009
19 https://doi.org/10.1063/1.102396
20 https://doi.org/10.1063/1.99491
21 https://doi.org/10.1080/00207219208925733
22 https://doi.org/10.1080/01418639108224451
23 https://doi.org/10.1088/0957-4484/12/2/303
24 https://doi.org/10.1088/0957-4484/14/4/311
25 https://doi.org/10.1109/16.861587
26 https://doi.org/10.1109/tnano.2003.808508
27 https://doi.org/10.1116/1.570478
28 https://doi.org/10.1126/science.1095520
29 https://doi.org/10.1126/science.272.5258.85
30 https://doi.org/10.1126/science.285.5426.391
31 https://doi.org/10.1143/jjap.24.1363
32 https://doi.org/10.1557/mrs2004.232
33 https://doi.org/10.1557/mrs2004.236
34 schema:description <p id="p-0001" num="0000">A resistive memory device includes a first electrode; a second electrode having a polycrystalline semiconductor layer that includes silicon; a non-crystalline silicon structure provided between the first electrode and the second electrode. The first electrode, second electrode and non-crystalline silicon structure define a two-terminal resistive memory cell.</p>
35 schema:keywords SiGe
36 crystalline silicon
37 electrode
38 memory
39 memory cell
40 memory device
41 semiconductor layer
42 silicon
43 schema:name Resistive memory using SiGe material
44 schema:sameAs https://app.dimensions.ai/details/patent/US-8374018-B2
45 schema:sdDatePublished 2019-03-07T15:29
46 schema:sdLicense https://scigraph.springernature.com/explorer/license/
47 schema:sdPublisher Ne60a5e6eef804359bae0bc3b9e215b35
48 sgo:license sg:explorer/license/
49 sgo:sdDataset patents
50 rdf:type sgo:Patent
51 N6960a7e54b934d94a6286979a791775f rdf:first Nd0ec4cba3c854232808abca3cb934af5
52 rdf:rest rdf:nil
53 Nd0ec4cba3c854232808abca3cb934af5 schema:name Wei Lu
54 rdf:type schema:Person
55 Ne60a5e6eef804359bae0bc3b9e215b35 schema:name Springer Nature - SN SciGraph project
56 rdf:type schema:Organization
57 anzsrc-for:2921 schema:inDefinedTermSet anzsrc-for:
58 rdf:type schema:DefinedTerm
59 sg:pub.10.1038/21602 schema:sameAs https://app.dimensions.ai/details/publication/pub.1021708578
60 https://doi.org/10.1038/21602
61 rdf:type schema:CreativeWork
62 sg:pub.10.1038/nature03190 schema:sameAs https://app.dimensions.ai/details/publication/pub.1041881218
63 https://doi.org/10.1038/nature03190
64 rdf:type schema:CreativeWork
65 sg:pub.10.1038/nmat2023 schema:sameAs https://app.dimensions.ai/details/publication/pub.1016486670
66 https://doi.org/10.1038/nmat2023
67 rdf:type schema:CreativeWork
68 sg:pub.10.1038/nmat2028 schema:sameAs https://app.dimensions.ai/details/publication/pub.1036680225
69 https://doi.org/10.1038/nmat2028
70 rdf:type schema:CreativeWork
71 https://doi.org/10.1016/0022-3093(83)90398-8 schema:sameAs https://app.dimensions.ai/details/publication/pub.1038730641
72 rdf:type schema:CreativeWork
73 https://doi.org/10.1016/0022-3093(85)90912-3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1026664535
74 rdf:type schema:CreativeWork
75 https://doi.org/10.1016/0022-3093(89)90346-3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1026464105
76 rdf:type schema:CreativeWork
77 https://doi.org/10.1016/0022-3093(89)90394-3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1001871718
78 rdf:type schema:CreativeWork
79 https://doi.org/10.1016/0038-1101(81)90038-1 schema:sameAs https://app.dimensions.ai/details/publication/pub.1019815338
80 rdf:type schema:CreativeWork
81 https://doi.org/10.1016/s0038-1101(99)00182-3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1012626917
82 rdf:type schema:CreativeWork
83 https://doi.org/10.1016/s0040-6090(03)00117-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000751229
84 rdf:type schema:CreativeWork
85 https://doi.org/10.1021/nl073224p schema:sameAs https://app.dimensions.ai/details/publication/pub.1056217645
86 rdf:type schema:CreativeWork
87 https://doi.org/10.1021/nl073225h schema:sameAs https://app.dimensions.ai/details/publication/pub.1021056823
88 rdf:type schema:CreativeWork
89 https://doi.org/10.1021/nl803669s schema:sameAs https://app.dimensions.ai/details/publication/pub.1004292239
90 rdf:type schema:CreativeWork
91 https://doi.org/10.1021/nl8037689 schema:sameAs https://app.dimensions.ai/details/publication/pub.1017668025
92 rdf:type schema:CreativeWork
93 https://doi.org/10.1049/ip-i-1.1982.0009 schema:sameAs https://app.dimensions.ai/details/publication/pub.1056855000
94 rdf:type schema:CreativeWork
95 https://doi.org/10.1063/1.102396 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057649973
96 rdf:type schema:CreativeWork
97 https://doi.org/10.1063/1.99491 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058139581
98 rdf:type schema:CreativeWork
99 https://doi.org/10.1080/00207219208925733 schema:sameAs https://app.dimensions.ai/details/publication/pub.1011066753
100 rdf:type schema:CreativeWork
101 https://doi.org/10.1080/01418639108224451 schema:sameAs https://app.dimensions.ai/details/publication/pub.1046191748
102 rdf:type schema:CreativeWork
103 https://doi.org/10.1088/0957-4484/12/2/303 schema:sameAs https://app.dimensions.ai/details/publication/pub.1041714625
104 rdf:type schema:CreativeWork
105 https://doi.org/10.1088/0957-4484/14/4/311 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000008791
106 rdf:type schema:CreativeWork
107 https://doi.org/10.1109/16.861587 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061097083
108 rdf:type schema:CreativeWork
109 https://doi.org/10.1109/tnano.2003.808508 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061711765
110 rdf:type schema:CreativeWork
111 https://doi.org/10.1116/1.570478 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062180525
112 rdf:type schema:CreativeWork
113 https://doi.org/10.1126/science.1095520 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062449454
114 rdf:type schema:CreativeWork
115 https://doi.org/10.1126/science.272.5258.85 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062552676
116 rdf:type schema:CreativeWork
117 https://doi.org/10.1126/science.285.5426.391 schema:sameAs https://app.dimensions.ai/details/publication/pub.1039329548
118 rdf:type schema:CreativeWork
119 https://doi.org/10.1143/jjap.24.1363 schema:sameAs https://app.dimensions.ai/details/publication/pub.1063040187
120 rdf:type schema:CreativeWork
121 https://doi.org/10.1557/mrs2004.232 schema:sameAs https://app.dimensions.ai/details/publication/pub.1067968603
122 rdf:type schema:CreativeWork
123 https://doi.org/10.1557/mrs2004.236 schema:sameAs https://app.dimensions.ai/details/publication/pub.1067968607
124 rdf:type schema:CreativeWork
 




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