Method of producing magnetoresistance effect element


Ontology type: sgo:Patent     


Patent Info

DATE

2012-06-05T00:00

AUTHORS

Migaku Takahashi , Masakiyo Tsunoda , Koujiro Komagaki , Yuji Uehara , Kazuyuki Sunaga

ABSTRACT

The method of the present invention provides a magnetoresistance effect element, which is capable of having a high MR ratio, corresponding to high density recording and being suitably applied to a magnetoresistance device even though a barrier layer is thinned to reduce resistance of the magnetoresistance effect element. The method of producing the magnetoresistance effect element, which includes the barrier layer composed of an oxidized metal, a first magnetic layer contacting one of surfaces of the barrier layer and a second magnetic layer contacting the other surface thereof, comprises the steps of: laminating the barrier layer on the first magnetic layer with using a target composed of the oxidized metal; and laminating the second magnetic layer on the barrier layer. The barrier layer is annealed before laminating the second magnetic layer thereon. More... »

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