Carbon nanotube high frequency transistor technology


Ontology type: sgo:Patent     


Patent Info

DATE

N/A

AUTHORS

Brian Y. Lim , Jon W. Lai

ABSTRACT

A technique of the invention reduces significantly the distance between the gate and single-walled carbon nanotubes to improve performance and efficiency of a carbon nanotube transistor device. Without using a porous template structure, single-walled carbon nanotubes are grown perpendicularly to a substrate between a base metal layer and a middle mesh layer. The nanotubes are insulated with a thin insulator and then gate regions are formed. More... »

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