Methods for fabricating passivated silicon nanowires and devices thus obtained


Ontology type: sgo:Patent     


Patent Info

DATE

2011-12-20T00:00

AUTHORS

Axel Scherer , Sameer WALAVALKAR , Michael D. Henry , Andrew P. Homyk

ABSTRACT

Methods for fabricating passivated silicon nanowires and an electronic arrangement thus obtained are described. Such arrangements may comprise a metal-oxide-semiconductor (MOS) structure such that the arrangements may be utilized for MOS field-effect transistors (MOSFETs) or opto-electronic switches.

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