Method of making nonvolatile memory cell containing carbon resistivity switching as a storage element by low temperature processing


Ontology type: sgo:Patent     


Patent Info

DATE

2011-11-01T00:00

AUTHORS

Tanmay Kumar , Er-Xuan Ping , Alper Ilkbahar

ABSTRACT

A method of making a nonvolatile memory cell includes forming a steering element and forming a carbon resistivity switching material storage element by coating a carbon containing colloid.

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