Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier


Ontology type: sgo:Patent     


Patent Info

DATE

2010-08-24T00:00

AUTHORS

Tong Zhao , Kunliang Zhang , Hui-Chuan Wang , Yu-Hsia Chen , Min Li

ABSTRACT

A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um2. The NOX process provides a more uniform MgO layer than sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom spin valve configuration, a Ta/Ru seed layer, IrMn AFM layer, CoFe/Ru/CoFeB pinned layer, Mg/MgO/Mg barrier, CoFe/NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head. More... »

Related SciGraph Publications

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/2878", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "name": "Tong Zhao", 
        "type": "Person"
      }, 
      {
        "name": "Kunliang Zhang", 
        "type": "Person"
      }, 
      {
        "name": "Hui-Chuan Wang", 
        "type": "Person"
      }, 
      {
        "name": "Yu-Hsia Chen", 
        "type": "Person"
      }, 
      {
        "name": "Min Li", 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1038/nmat1257", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1047761572", 
          "https://doi.org/10.1038/nmat1257"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nmat1256", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1053403072", 
          "https://doi.org/10.1038/nmat1256"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2010-08-24T00:00", 
    "description": "

A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um2. The NOX process provides a more uniform MgO layer than sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom spin valve configuration, a Ta/Ru seed layer, IrMn AFM layer, CoFe/Ru/CoFeB pinned layer, Mg/MgO/Mg barrier, CoFe/NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head.

", "id": "sg:patent.US-7780820-B2", "keywords": [ "low resistance", "barrier", "high performance", "tunnel barrier", "configuration", "angstrom", "layer", "sputtering", "NOx", "oxygen pressure", "Torr", "Time", "pressure", "ratio", "ra", "um", "uniform", "oxidation", "ferromagnetic layer", "bottom", "AFM", "read head" ], "name": "Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier", "recipient": [ { "id": "https://www.grid.ac/institutes/grid.471215.4", "type": "Organization" } ], "sameAs": [ "https://app.dimensions.ai/details/patent/US-7780820-B2" ], "sdDataset": "patents", "sdDatePublished": "2019-04-18T10:06", "sdLicense": "https://scigraph.springernature.com/explorer/license/", "sdPublisher": { "name": "Springer Nature - SN SciGraph project", "type": "Organization" }, "sdSource": "s3://com-uberresearch-data-patents-target-20190320-rc/data/sn-export/402f166718b70575fb5d4ffe01f064d1/0000100128-0000352499/json_export_00099.jsonl", "type": "Patent" } ]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/patent.US-7780820-B2'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/patent.US-7780820-B2'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/patent.US-7780820-B2'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/patent.US-7780820-B2'


 

This table displays all metadata directly associated to this object as RDF triples.

68 TRIPLES      15 PREDICATES      38 URIs      30 LITERALS      2 BLANK NODES

Subject Predicate Object
1 sg:patent.US-7780820-B2 schema:about anzsrc-for:2878
2 schema:author Nae08f5540efa40fe8fc21583fb0053e3
3 schema:citation sg:pub.10.1038/nmat1256
4 sg:pub.10.1038/nmat1257
5 schema:datePublished 2010-08-24T00:00
6 schema:description <p num="p-0001">A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um<sup>2</sup>. The NOX process provides a more uniform MgO layer than sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom spin valve configuration, a Ta/Ru seed layer, IrMn AFM layer, CoFe/Ru/CoFeB pinned layer, Mg/MgO/Mg barrier, CoFe/NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head.</p>
7 schema:keywords AFM
8 NOx
9 Time
10 Torr
11 angstrom
12 barrier
13 bottom
14 configuration
15 ferromagnetic layer
16 high performance
17 layer
18 low resistance
19 oxidation
20 oxygen pressure
21 pressure
22 ra
23 ratio
24 read head
25 sputtering
26 tunnel barrier
27 um
28 uniform
29 schema:name Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
30 schema:recipient https://www.grid.ac/institutes/grid.471215.4
31 schema:sameAs https://app.dimensions.ai/details/patent/US-7780820-B2
32 schema:sdDatePublished 2019-04-18T10:06
33 schema:sdLicense https://scigraph.springernature.com/explorer/license/
34 schema:sdPublisher Nc3a34c7b549e4960bae4f3ce56b9a22e
35 sgo:license sg:explorer/license/
36 sgo:sdDataset patents
37 rdf:type sgo:Patent
38 N05b5dff6f0e44ac9969400555bf242d1 rdf:first N5ccc5e0af5564375bd63ec795887cc54
39 rdf:rest Naafab8033fdf4da8aa9ba492ac7975b4
40 N09621a50aa21458398a44855fe5f2523 schema:name Min Li
41 rdf:type schema:Person
42 N2756c479b0704c35b3a244d852f6ed7b rdf:first Na38b81882f124d2fb0a5590d184b5439
43 rdf:rest N05b5dff6f0e44ac9969400555bf242d1
44 N3a4a58ddc49b4ea892ee3b5f68352f14 schema:name Tong Zhao
45 rdf:type schema:Person
46 N5ccc5e0af5564375bd63ec795887cc54 schema:name Hui-Chuan Wang
47 rdf:type schema:Person
48 N6d0e241158b246b299da03355b38690e schema:name Yu-Hsia Chen
49 rdf:type schema:Person
50 Na38b81882f124d2fb0a5590d184b5439 schema:name Kunliang Zhang
51 rdf:type schema:Person
52 Naafab8033fdf4da8aa9ba492ac7975b4 rdf:first N6d0e241158b246b299da03355b38690e
53 rdf:rest Nc0bbcbf6081547eebd47188c2a659e16
54 Nae08f5540efa40fe8fc21583fb0053e3 rdf:first N3a4a58ddc49b4ea892ee3b5f68352f14
55 rdf:rest N2756c479b0704c35b3a244d852f6ed7b
56 Nc0bbcbf6081547eebd47188c2a659e16 rdf:first N09621a50aa21458398a44855fe5f2523
57 rdf:rest rdf:nil
58 Nc3a34c7b549e4960bae4f3ce56b9a22e schema:name Springer Nature - SN SciGraph project
59 rdf:type schema:Organization
60 anzsrc-for:2878 schema:inDefinedTermSet anzsrc-for:
61 rdf:type schema:DefinedTerm
62 sg:pub.10.1038/nmat1256 schema:sameAs https://app.dimensions.ai/details/publication/pub.1053403072
63 https://doi.org/10.1038/nmat1256
64 rdf:type schema:CreativeWork
65 sg:pub.10.1038/nmat1257 schema:sameAs https://app.dimensions.ai/details/publication/pub.1047761572
66 https://doi.org/10.1038/nmat1257
67 rdf:type schema:CreativeWork
68 https://www.grid.ac/institutes/grid.471215.4 schema:Organization
 




Preview window. Press ESC to close (or click here)


...