Directionally controlled growth of nanowhiskers


Ontology type: sgo:Patent     


Patent Info

DATE

2008-04-08T00:00

AUTHORS

Werner Seifert , Lars Ivar Samuelson , Björn Jonas Ohlsson , Lars Magnus Borgström

ABSTRACT

Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential <111>B direction. As one example, <001> InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults. More... »

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