Tunnel barriers based on rare earth element oxides


Ontology type: sgo:Patent     


Patent Info

DATE

2008-03-18T00:00

AUTHORS

Stuart Stephen Papworth Parkin

ABSTRACT

Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure that includes a layer of a rare earth oxide. The bilayer also includes a layer of crystalline material, such as MgO or Mg—ZnO. If MgO is used, then it is preferably (100) oriented. The magnetic tunnel junctions so formed enjoy high tunneling magnetoresistance, e.g., much greater than 100% at room temperature. More... »

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