High performance field effect transistors comprising carbon nanotubes fabricated using solution based processing


Ontology type: sgo:Patent     


Patent Info

DATE

2007-06-05T00:00

AUTHORS

Patrick Roland Lucien Malenfant , Ji-Ung Lee , Yun Li , Walter Vladimir Cicha

ABSTRACT

The present invention is directed toward field effect transistors (FETs) and thin film transistors (TFTs) comprising carbon nanotubes (CNTs) and to methods of making such devices using solution-based processing techniques, wherein the CNTs within such devices have been fractionated so as to be concentrated in semiconducting CNTs. Additionally, the relatively low-temperature solution-based processing achievable with the methods of the present invention permit the use of plastics in the fabricated devices. More... »

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