Process for the preparation of mono-crystalline 3-5 semi-insulating materials by doping and use of the semi-insulating materials thus obtained


Ontology type: sgo:Patent     


Patent Info

DATE

1989-08-01T00:00

AUTHORS

Bertrand Lambert , Yves Toudic , Rene Coquille

ABSTRACT

The present invention relates to a process for the preparation of mono-crystalline 3-5 semi-insulating materails by doping, characterized in that the starting charge of type ρ is doped with at least one deep donor due to a transition element. It relates also to the use of the semi-insulating materials obtained in the fields of optoelectronics and of rapid electronics. More... »

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