Method For Production Of Ultraviolet Light-Emitting Hexagonal Boron Nitride Crystal


Ontology type: sgo:Patent     


Patent Info

DATE

2010-02-17T00:00

AUTHORS

KUBOTA, YOICHI , TANIGUCHI, TAKASHI , TSUDA, OSAMU , WATANABE, KENJI

ABSTRACT

The invention has for its object to provide a process of synthesizing high-purity hBN crystal bodies on a robust substrate even under normal pressure.The inventive process of producing hexagonal boron nitride crystal bodies is characterized by comprising a preparation step of preparing a mixture of a boron nitride raw material and a metal solvent comprising a transition metal, a contact step of bringing a sapphire substrate in contact with the mixture, a heating step of heating the mixture, and a recrystallization step of recrystallizing at normal pressure a melt obtained in the heating step. It is also characterized by using as the metal solvent a transition metal selected from the group consisting of Fe, Ni, Co, and a combination thereof, and at least one substance selected from the group consisting of Cr, TiN and V without recourse to any sapphire substrate. More... »

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The invention has for its object to provide a process of synthesizing high-purity hBN crystal bodies on a robust substrate even under normal pressure.

The inventive process of producing hexagonal boron nitride crystal bodies is characterized by comprising a preparation step of preparing a mixture of a boron nitride raw material and a metal solvent comprising a transition metal, a contact step of bringing a sapphire substrate in contact with the mixture, a heating step of heating the mixture, and a recrystallization step of recrystallizing at normal pressure a melt obtained in the heating step. It is also characterized by using as the metal solvent a transition metal selected from the group consisting of Fe, Ni, Co, and a combination thereof, and at least one substance selected from the group consisting of Cr, TiN and V without recourse to any sapphire substrate.

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