Russian Microelectronics View Homepage


Ontology type: schema:Periodical     


Journal Info

START YEAR

N/A

PUBLISHER

Pleiades Publishing

LANGUAGE

en

HOMEPAGE

http://link.springer.com/journal/11180

Recent publications latest 20 shown

  • 2018-12 Dislocation Structure of Epitaxial Layers of AlGaN/GaN/α-Al2O3 Heterostructures Containing a GaN Layer Doped with Carbon and Iron
  • 2018-12 Study of the Plastic Formation in the Production of Thermoelectric Material Based on Bismuth Telluride
  • 2018-12 Methods for Studying Materials and Structures in Electronics as Applied to the Development of Medicinal Endoprostheses of Titanium with Enhanced Fibroinegration Efficiency
  • 2018-12 Polysilicon Market Development and Production Technologies
  • 2018-12 On the Nature of the Effective Surface Charge Transformation on InAs Crystals during Anodic Oxide Layer Growth
  • 2018-12 Low Dose Rate Effects in Silicon-Based Devices and Integrated Circuits: A Review
  • 2018-12 Modeling the Energy Structure of a GaN p–i–n Junction
  • 2018-12 Experimental Support of the Magnetron Nickel Oxide Cathode Fabrication Process
  • 2018-12 Studying Phase Equilibria in the Zn–Se–Fe Ternary System for Laser Applications
  • 2018-12 Formation of Charge Pumps in the Structure of Photoelectric Converters
  • 2018-12 Optimization Problems of Nanosized Semiconductor Heterostructures
  • 2018-12 Electromagnetic and Mechanical Properties of the Nanocomposites of Polyacrylonitrile/Carbon Nanotubes
  • 2018-11 Simulation the Effects of Single Nuclear Particles on STG RS Triggers with Transistors Spacing into Two Groups
  • 2018-11 Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar Transistors
  • 2018-11 Quality Control of a Multilayer Spin-Tunnel Structure with the Use of a Combination of Analytical Methods
  • 2018-11 Structural Strength and Temperature Condition of Multi-Chip Modules
  • 2018-11 Design Automation Technique of Silicon Bandgap Voltage Reference
  • 2018-11 Etching of SiC in Low Power Inductively-Coupled Plasma
  • 2018-11 Solving the Problems of Routing Interconnects with a Resynthesis for Reconfigurable Systems on a Chip
  • 2018-11 Modeling the Dynamics of the Integral Dielectric Permittivity of a Porous Low-K Organosilicate Film during the Dry Etching of a Photoresist in O2 Plasma
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    [
      {
        "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
        "about": [
          {
            "id": "http://scigraph.springernature.com/ontologies/product-market-codes/T24000", 
            "inDefinedTermSet": "http://scigraph.springernature.com/ontologies/product-market-codes/", 
            "name": "Electrical Engineering", 
            "type": "DefinedTerm"
          }
        ], 
        "contentRating": [
          {
            "author": "snip", 
            "ratingValue": "0.512", 
            "type": "Rating"
          }, 
          {
            "author": "sjr", 
            "ratingValue": "0.227", 
            "type": "Rating"
          }
        ], 
        "description": "

    Russian Microelectronics\u00a0 covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.

    PEER REVIEW

    Russian Microelectronics is a peer reviewed journal. We use a double blind peer review format. Our team of reviewers includes 27 reviewers, both internal and external (37%), from 5 countries (Russia, Belarus, China, Belgium, Germany). The average period from submission to first decision in 2017 was 20 days, and that from first decision to acceptance was 60 days. The rejection rate for submitted manuscripts in 2017 was 15%. The final decision on the acceptance of an article for publication is made by the Editorial Board.

    Any invited reviewer who feels unqualified or unable to review the manuscript due to the conflict of interests should promptly notify the editors and decline the invitation. Reviewers should formulate their statements clearly in a sound and reasoned way so that authors can use reviewer\u2019s arguments to improve the manuscript. Personal criticism of the authors must be avoided. Reviewers should indicate in a review (i) any relevant published work that has not been cited by the authors, (ii) anything that has been reported in previous publications and not given appropriate reference or citation, (ii) any substantial similarity or overlap with any other manuscript (published or unpublished) of which they have personal knowledge.

    ", "editor": [ { "familyName": "Krasnikov", "givenName": "Gennady Ya.", "type": "Person" } ], "id": "sg:journal.1136391", "inLanguage": [ "en" ], "isAccessibleForFree": false, "issn": [ "1063-7397", "1608-3415" ], "license": "Subscription Only", "name": "Russian Microelectronics", "productId": [ { "name": "scopus_id", "type": "PropertyValue", "value": [ "27163" ] }, { "name": "nsd_ids_id", "type": "PropertyValue", "value": [ "446722" ] }, { "name": "wos_id", "type": "PropertyValue", "value": [ "1063-7397/RUSSIAN MICROELECTRONICS" ] }, { "name": "springer_id", "type": "PropertyValue", "value": [ "11180" ] }, { "name": "dimensions_id", "type": "PropertyValue", "value": [ "136391" ] } ], "publisher": { "name": "Pleiades Publishing", "type": "Organization" }, "publisherImprint": "Pleiades Publishing", "sameAs": [ "https://app.dimensions.ai/discover/publication?and_facet_source_title=jour.1136391" ], "sdDataset": "journals", "sdDatePublished": "2019-03-18T11:05", "sdLicense": "https://scigraph.springernature.com/explorer/license/", "sdPublisher": { "name": "Springer Nature - SN SciGraph project", "type": "Organization" }, "sdSource": "file:///home/ubuntu/piotr/scigraph_export/journals_20190313_sn_only.jsonl", "type": "Periodical", "url": "http://link.springer.com/journal/11180" } ]
     

    Download the RDF metadata as:  json-ld nt turtle xml License info

    HOW TO GET THIS DATA PROGRAMMATICALLY:

    JSON-LD is a popular format for linked data which is fully compatible with JSON.

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    This table displays all metadata directly associated to this object as RDF triples.

    63 TRIPLES      20 PREDICATES      27 URIs      22 LITERALS      10 BLANK NODES

    Subject Predicate Object
    1 sg:journal.1136391 schema:about sg:ontologies/product-market-codes/T24000
    2 schema:contentRating Na3d6a8e937214ad09838f6e00a8cab74
    3 Nfbaa12feb3c848a1a9520ca77db76a59
    4 schema:description <p><i>Russian Microelectronics</i>  covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.</p><p>PEER REVIEW</p><p>Russian Microelectronics is a peer reviewed journal. We use a double blind peer review format. Our team of reviewers includes 27 reviewers, both internal and external (37%), from 5 countries (Russia, Belarus, China, Belgium, Germany). The average period from submission to first decision in 2017 was 20 days, and that from first decision to acceptance was 60 days. The rejection rate for submitted manuscripts in 2017 was 15%. The final decision on the acceptance of an article for publication is made by the Editorial Board.</p><p>Any invited reviewer who feels unqualified or unable to review the manuscript due to the conflict of interests should promptly notify the editors and decline the invitation. Reviewers should formulate their statements clearly in a sound and reasoned way so that authors can use reviewer’s arguments to improve the manuscript. Personal criticism of the authors must be avoided. Reviewers should indicate in a review (i) any relevant published work that has not been cited by the authors, (ii) anything that has been reported in previous publications and not given appropriate reference or citation, (ii) any substantial similarity or overlap with any other manuscript (published or unpublished) of which they have personal knowledge.</p>
    5 schema:editor N6f50c500ac8041dd95785b6a0a627e30
    6 schema:inLanguage en
    7 schema:isAccessibleForFree false
    8 schema:issn 1063-7397
    9 1608-3415
    10 schema:license Subscription Only
    11 schema:name Russian Microelectronics
    12 schema:productId N0a223632aaaa4b6d82ce91afabed83f1
    13 N61ef316c31804ae799b855492b459f45
    14 Naca826e503b94d88a0c7c8163abbb567
    15 Nc9c645f4f94342b0844d84850b9c4c95
    16 Neb1d11c948334a7dbbd473c3b9260c8d
    17 schema:publisher N405a69c2bc8a494f8705c9f9e9051696
    18 schema:publisherImprint Pleiades Publishing
    19 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_source_title=jour.1136391
    20 schema:sdDatePublished 2019-03-18T11:05
    21 schema:sdLicense https://scigraph.springernature.com/explorer/license/
    22 schema:sdPublisher Ne82b0f2a0ef848e281c90590612a0214
    23 schema:url http://link.springer.com/journal/11180
    24 sgo:license sg:explorer/license/
    25 sgo:sdDataset journals
    26 rdf:type schema:Periodical
    27 N0a223632aaaa4b6d82ce91afabed83f1 schema:name scopus_id
    28 schema:value 27163
    29 rdf:type schema:PropertyValue
    30 N0fdd4bd2686f4eb0a013537fbf8c50a6 rdf:first snip
    31 rdf:rest rdf:nil
    32 N220627582d884260880e96c18ed7895f schema:familyName Krasnikov
    33 schema:givenName Gennady Ya.
    34 rdf:type schema:Person
    35 N22c69c324de247eab6a6cf29e6c34633 rdf:first sjr
    36 rdf:rest rdf:nil
    37 N405a69c2bc8a494f8705c9f9e9051696 schema:name Pleiades Publishing
    38 rdf:type schema:Organization
    39 N61ef316c31804ae799b855492b459f45 schema:name wos_id
    40 schema:value 1063-7397/RUSSIAN MICROELECTRONICS
    41 rdf:type schema:PropertyValue
    42 N6f50c500ac8041dd95785b6a0a627e30 rdf:first N220627582d884260880e96c18ed7895f
    43 rdf:rest rdf:nil
    44 Na3d6a8e937214ad09838f6e00a8cab74 schema:author N0fdd4bd2686f4eb0a013537fbf8c50a6
    45 schema:ratingValue 0.512
    46 rdf:type schema:Rating
    47 Naca826e503b94d88a0c7c8163abbb567 schema:name dimensions_id
    48 schema:value 136391
    49 rdf:type schema:PropertyValue
    50 Nc9c645f4f94342b0844d84850b9c4c95 schema:name springer_id
    51 schema:value 11180
    52 rdf:type schema:PropertyValue
    53 Ne82b0f2a0ef848e281c90590612a0214 schema:name Springer Nature - SN SciGraph project
    54 rdf:type schema:Organization
    55 Neb1d11c948334a7dbbd473c3b9260c8d schema:name nsd_ids_id
    56 schema:value 446722
    57 rdf:type schema:PropertyValue
    58 Nfbaa12feb3c848a1a9520ca77db76a59 schema:author N22c69c324de247eab6a6cf29e6c34633
    59 schema:ratingValue 0.227
    60 rdf:type schema:Rating
    61 sg:ontologies/product-market-codes/T24000 schema:inDefinedTermSet sg:ontologies/product-market-codes/
    62 schema:name Electrical Engineering
    63 rdf:type schema:DefinedTerm
     




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