Graphene Based Multi - order Resistive Material and Its Ultrahigh Density Information Storage View Homepage


Ontology type: schema:MonetaryGrant     


Grant Info

YEARS

2013-2016

FUNDING AMOUNT

250000 CNY

ABSTRACT

Graphene-based memory technology is an emerging research area in the current interdisciplinary of carbon electronics and information storage. Based on recent advances and trends in polymer memories and carbon electronics, the proposal demonstrates that a series of nitrogen- and/or sulfur-doped graphene oxide sheets and nitrogen- and/or sulfur-doped graphene oxide quantum dots will be synthesized based on graphene, carbon nanotubes, and their derivatives as the precursors, and then use them to prepare a series of doped graphene oxide thin films and doped graphene oxide-polymer composite films. Finally, graphene-based memory devices with multilevel resistive switching properties are fabricated. After that, the impact of chemical structure and composition of nitrogen- and/or sulfur-doped graphene oxide materials on their energy level, dispersion, resistive switching properties, and thermal stability is studied systematically. Material structure-device structure-memory property relationships are further explored. Moreover, a model of operation mechanism of multilevel resistive switching in graphene-based memory devices will be made based on the analysis of carrier transport in the doped graphene oxide materials and doped graphene oxide-polymer materials under different electrical conductivity. The design and fabrica More... »

URL

http://npd.nsfc.gov.cn/projectDetail.action?pid=51302134

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